The damage mitigation process for Si nanopillar structure using silica nanosphere lithography and metal assisted chemical etching

Sangpyeong Kim; Som Dahal; Andre Augusto; Stuart Bowden; Christiana Honsberg

doi:10.1109/PVSC.2018.8548297

The damage mitigation process for Si nanopillar structure using silica nanosphere lithography and metal assisted chemical etching

Sangpyeong Kim, Som Dahal, Andre Augusto, Stuart Bowden, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This work focuses on mitigating the damage from nanostructure fabrication using silica nanosphere lithography (SNL) and metal assisted chemical etching (MACE). Metal contamination and plasma damage are the two main factors to limit the Si wafer's minority carrier lifetime. Ni/Au and Ti/Au metal layers on bare Si wafer are compared using lifetime recovery test. Ti/Au shows to be more suitable for the MACE process. Samples deposited with Ni/Au and Ti/Au show lifetimes of 7 \mu \mathrm{s} and 1200 \mu \mathrm{s}, respectively. The silicon surfaceis degraded significantly by the RIE plasma during the nanosphere etching process. SiO2 protective layer was added to the process, mitigating significantly the plasma damage on the siliconsurface. Lifetime measurements shows an improvement over 1 ms when SiO2 protective layer on planar Si wafer is used. Lifetimes of 353 \mu \mathrm{s} and implied open circuit voltages of 651mV were accomplished on nanopillar structured wafers using SiOx protective layer and Ti/Au.

Original language	English (US)
Title of host publication	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3121-3124
Number of pages	4
ISBN (Electronic)	9781538685297
DOIs	https://doi.org/10.1109/PVSC.2018.8548297
State	Published - Nov 26 2018
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: Jun 10 2018 → Jun 15 2018

Publication series

Name	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Other

Other	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/Territory	United States
City	Waikoloa Village
Period	6/10/18 → 6/15/18

ASJC Scopus subject areas

Energy Engineering and Power Technology
Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2018.8548297

Cite this

Kim, S., Dahal, S., Augusto, A., Bowden, S., & Honsberg, C. (2018). The damage mitigation process for Si nanopillar structure using silica nanosphere lithography and metal assisted chemical etching. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 3121-3124). Article 8548297 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2018.8548297

The damage mitigation process for Si nanopillar structure using silica nanosphere lithography and metal assisted chemical etching. / Kim, Sangpyeong; Dahal, Som; Augusto, Andre et al.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 3121-3124 8548297 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, S, Dahal, S, Augusto, A, Bowden, S & Honsberg, C 2018, The damage mitigation process for Si nanopillar structure using silica nanosphere lithography and metal assisted chemical etching. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8548297, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, Institute of Electrical and Electronics Engineers Inc., pp. 3121-3124, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 6/10/18. https://doi.org/10.1109/PVSC.2018.8548297

Kim S, Dahal S, Augusto A, Bowden S, Honsberg C. The damage mitigation process for Si nanopillar structure using silica nanosphere lithography and metal assisted chemical etching. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc. 2018. p. 3121-3124. 8548297. (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). doi: 10.1109/PVSC.2018.8548297

Kim, Sangpyeong ; Dahal, Som ; Augusto, Andre et al. / The damage mitigation process for Si nanopillar structure using silica nanosphere lithography and metal assisted chemical etching. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 3121-3124 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

@inproceedings{193e5df745034fc7bcaf2b1133c9c2f3,

title = "The damage mitigation process for Si nanopillar structure using silica nanosphere lithography and metal assisted chemical etching",

abstract = "This work focuses on mitigating the damage from nanostructure fabrication using silica nanosphere lithography (SNL) and metal assisted chemical etching (MACE). Metal contamination and plasma damage are the two main factors to limit the Si wafer's minority carrier lifetime. Ni/Au and Ti/Au metal layers on bare Si wafer are compared using lifetime recovery test. Ti/Au shows to be more suitable for the MACE process. Samples deposited with Ni/Au and Ti/Au show lifetimes of 7 \mu \mathrm{s} and 1200 \mu \mathrm{s}, respectively. The silicon surfaceis degraded significantly by the RIE plasma during the nanosphere etching process. SiO2 protective layer was added to the process, mitigating significantly the plasma damage on the siliconsurface. Lifetime measurements shows an improvement over 1 ms when SiO2 protective layer on planar Si wafer is used. Lifetimes of 353 \mu \mathrm{s} and implied open circuit voltages of 651mV were accomplished on nanopillar structured wafers using SiOx protective layer and Ti/Au.",

author = "Sangpyeong Kim and Som Dahal and Andre Augusto and Stuart Bowden and Christiana Honsberg",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

year = "2018",

month = nov,

day = "26",

doi = "10.1109/PVSC.2018.8548297",

language = "English (US)",

series = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "3121--3124",

booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

}

TY - GEN

T1 - The damage mitigation process for Si nanopillar structure using silica nanosphere lithography and metal assisted chemical etching

AU - Kim, Sangpyeong

AU - Dahal, Som

AU - Augusto, Andre

AU - Bowden, Stuart

AU - Honsberg, Christiana

PY - 2018/11/26

Y1 - 2018/11/26

N2 - This work focuses on mitigating the damage from nanostructure fabrication using silica nanosphere lithography (SNL) and metal assisted chemical etching (MACE). Metal contamination and plasma damage are the two main factors to limit the Si wafer's minority carrier lifetime. Ni/Au and Ti/Au metal layers on bare Si wafer are compared using lifetime recovery test. Ti/Au shows to be more suitable for the MACE process. Samples deposited with Ni/Au and Ti/Au show lifetimes of 7 \mu \mathrm{s} and 1200 \mu \mathrm{s}, respectively. The silicon surfaceis degraded significantly by the RIE plasma during the nanosphere etching process. SiO2 protective layer was added to the process, mitigating significantly the plasma damage on the siliconsurface. Lifetime measurements shows an improvement over 1 ms when SiO2 protective layer on planar Si wafer is used. Lifetimes of 353 \mu \mathrm{s} and implied open circuit voltages of 651mV were accomplished on nanopillar structured wafers using SiOx protective layer and Ti/Au.

AB - This work focuses on mitigating the damage from nanostructure fabrication using silica nanosphere lithography (SNL) and metal assisted chemical etching (MACE). Metal contamination and plasma damage are the two main factors to limit the Si wafer's minority carrier lifetime. Ni/Au and Ti/Au metal layers on bare Si wafer are compared using lifetime recovery test. Ti/Au shows to be more suitable for the MACE process. Samples deposited with Ni/Au and Ti/Au show lifetimes of 7 \mu \mathrm{s} and 1200 \mu \mathrm{s}, respectively. The silicon surfaceis degraded significantly by the RIE plasma during the nanosphere etching process. SiO2 protective layer was added to the process, mitigating significantly the plasma damage on the siliconsurface. Lifetime measurements shows an improvement over 1 ms when SiO2 protective layer on planar Si wafer is used. Lifetimes of 353 \mu \mathrm{s} and implied open circuit voltages of 651mV were accomplished on nanopillar structured wafers using SiOx protective layer and Ti/Au.

UR - http://www.scopus.com/inward/record.url?scp=85059894307&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85059894307&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2018.8548297

DO - 10.1109/PVSC.2018.8548297

M3 - Conference contribution

AN - SCOPUS:85059894307

T3 - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

SP - 3121

EP - 3124

BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018

Y2 - 10 June 2018 through 15 June 2018

ER -

The damage mitigation process for Si nanopillar structure using silica nanosphere lithography and metal assisted chemical etching

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this