Abstract
Internal interfaces are of intrinsic importance to the properties of all materials, and the link between their structure and properties continues to be an active field of research in materials science. Electron microscopy offers several techniques that provide an unparalleled degree of detail in the characterisation of these interfaces. In the present work, the structural arrangements of interfaces in doped silicon nitride ceramics are studied at the atomic scale using the electron-based techniques of high resolution transmission electron microscopy, high-angle annular dark field scanning transmission electron microscopy and reduced density function analysis using electrons. The investigation shows that these interfaces have a structure distinct from that of the bounding phases that abut them. Furthermore, this study provides a template for the future investigation of internal interfaces at the atomic scale.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 77-84 |
| Number of pages | 8 |
| Journal | Materials Science and Engineering A |
| Volume | 422 |
| Issue number | 1-2 |
| DOIs | |
| State | Published - Apr 25 2006 |
| Externally published | Yes |
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Keywords
- Interfaces
- Silicon nitride
- Transmission electron microscopy
ASJC Scopus subject areas
- Materials Science(all)
Cite this
The crystal/glass interface in doped Si3N4 . / Winkelman, Graham B.; Dwyer, Christian; Marsh, Chris; Hudson, Toby S.; Nguyen-Manh, Duc; Döblinger, Markus; Cockayne, David J H.
In: Materials Science and Engineering A, Vol. 422, No. 1-2, 25.04.2006, p. 77-84.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - The crystal/glass interface in doped Si3N4
AU - Winkelman, Graham B.
AU - Dwyer, Christian
AU - Marsh, Chris
AU - Hudson, Toby S.
AU - Nguyen-Manh, Duc
AU - Döblinger, Markus
AU - Cockayne, David J H
PY - 2006/4/25
Y1 - 2006/4/25
N2 - Internal interfaces are of intrinsic importance to the properties of all materials, and the link between their structure and properties continues to be an active field of research in materials science. Electron microscopy offers several techniques that provide an unparalleled degree of detail in the characterisation of these interfaces. In the present work, the structural arrangements of interfaces in doped silicon nitride ceramics are studied at the atomic scale using the electron-based techniques of high resolution transmission electron microscopy, high-angle annular dark field scanning transmission electron microscopy and reduced density function analysis using electrons. The investigation shows that these interfaces have a structure distinct from that of the bounding phases that abut them. Furthermore, this study provides a template for the future investigation of internal interfaces at the atomic scale.
AB - Internal interfaces are of intrinsic importance to the properties of all materials, and the link between their structure and properties continues to be an active field of research in materials science. Electron microscopy offers several techniques that provide an unparalleled degree of detail in the characterisation of these interfaces. In the present work, the structural arrangements of interfaces in doped silicon nitride ceramics are studied at the atomic scale using the electron-based techniques of high resolution transmission electron microscopy, high-angle annular dark field scanning transmission electron microscopy and reduced density function analysis using electrons. The investigation shows that these interfaces have a structure distinct from that of the bounding phases that abut them. Furthermore, this study provides a template for the future investigation of internal interfaces at the atomic scale.
KW - Interfaces
KW - Silicon nitride
KW - Transmission electron microscopy
UR - http://www.scopus.com/inward/record.url?scp=33645904188&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33645904188&partnerID=8YFLogxK
U2 - 10.1016/j.msea.2006.01.003
DO - 10.1016/j.msea.2006.01.003
M3 - Article
AN - SCOPUS:33645904188
VL - 422
SP - 77
EP - 84
JO - Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing
JF - Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing
SN - 0921-5093
IS - 1-2
ER -