The crystal/glass interface in doped Si3N4

Graham B. Winkelman, Christian Dwyer, Chris Marsh, Toby S. Hudson, Duc Nguyen-Manh, Markus Döblinger, David J H Cockayne

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Internal interfaces are of intrinsic importance to the properties of all materials, and the link between their structure and properties continues to be an active field of research in materials science. Electron microscopy offers several techniques that provide an unparalleled degree of detail in the characterisation of these interfaces. In the present work, the structural arrangements of interfaces in doped silicon nitride ceramics are studied at the atomic scale using the electron-based techniques of high resolution transmission electron microscopy, high-angle annular dark field scanning transmission electron microscopy and reduced density function analysis using electrons. The investigation shows that these interfaces have a structure distinct from that of the bounding phases that abut them. Furthermore, this study provides a template for the future investigation of internal interfaces at the atomic scale.

Original languageEnglish (US)
Pages (from-to)77-84
Number of pages8
JournalMaterials Science and Engineering A
Volume422
Issue number1-2
DOIs
StatePublished - Apr 25 2006
Externally publishedYes

Fingerprint

Glass
Crystals
Electrons
glass
Materials science
High resolution transmission electron microscopy
Silicon nitride
Probability density function
Electron microscopy
crystals
Transmission electron microscopy
Scanning electron microscopy
transmission electron microscopy
materials science
silicon nitrides
electron microscopy
electrons
templates
silicon nitride
ceramics

Keywords

  • Interfaces
  • Silicon nitride
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Winkelman, G. B., Dwyer, C., Marsh, C., Hudson, T. S., Nguyen-Manh, D., Döblinger, M., & Cockayne, D. J. H. (2006). The crystal/glass interface in doped Si3N4 Materials Science and Engineering A, 422(1-2), 77-84. https://doi.org/10.1016/j.msea.2006.01.003

The crystal/glass interface in doped Si3N4 . / Winkelman, Graham B.; Dwyer, Christian; Marsh, Chris; Hudson, Toby S.; Nguyen-Manh, Duc; Döblinger, Markus; Cockayne, David J H.

In: Materials Science and Engineering A, Vol. 422, No. 1-2, 25.04.2006, p. 77-84.

Research output: Contribution to journalArticle

Winkelman, GB, Dwyer, C, Marsh, C, Hudson, TS, Nguyen-Manh, D, Döblinger, M & Cockayne, DJH 2006, 'The crystal/glass interface in doped Si3N4 ', Materials Science and Engineering A, vol. 422, no. 1-2, pp. 77-84. https://doi.org/10.1016/j.msea.2006.01.003
Winkelman GB, Dwyer C, Marsh C, Hudson TS, Nguyen-Manh D, Döblinger M et al. The crystal/glass interface in doped Si3N4 Materials Science and Engineering A. 2006 Apr 25;422(1-2):77-84. https://doi.org/10.1016/j.msea.2006.01.003
Winkelman, Graham B. ; Dwyer, Christian ; Marsh, Chris ; Hudson, Toby S. ; Nguyen-Manh, Duc ; Döblinger, Markus ; Cockayne, David J H. / The crystal/glass interface in doped Si3N4 In: Materials Science and Engineering A. 2006 ; Vol. 422, No. 1-2. pp. 77-84.
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