The crystal/glass interface in doped Si3N4

Graham B. Winkelman, Christian Dwyer, Chris Marsh, Toby S. Hudson, Duc Nguyen-Manh, Markus Döblinger, David J.H. Cockayne

Research output: Contribution to journalArticle

23 Scopus citations

Abstract

Internal interfaces are of intrinsic importance to the properties of all materials, and the link between their structure and properties continues to be an active field of research in materials science. Electron microscopy offers several techniques that provide an unparalleled degree of detail in the characterisation of these interfaces. In the present work, the structural arrangements of interfaces in doped silicon nitride ceramics are studied at the atomic scale using the electron-based techniques of high resolution transmission electron microscopy, high-angle annular dark field scanning transmission electron microscopy and reduced density function analysis using electrons. The investigation shows that these interfaces have a structure distinct from that of the bounding phases that abut them. Furthermore, this study provides a template for the future investigation of internal interfaces at the atomic scale.

Original languageEnglish (US)
Pages (from-to)77-84
Number of pages8
JournalMaterials Science and Engineering A
Volume422
Issue number1-2
DOIs
StatePublished - Apr 25 2006
Externally publishedYes

Keywords

  • Interfaces
  • Silicon nitride
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Winkelman, G. B., Dwyer, C., Marsh, C., Hudson, T. S., Nguyen-Manh, D., Döblinger, M., & Cockayne, D. J. H. (2006). The crystal/glass interface in doped Si3N4. Materials Science and Engineering A, 422(1-2), 77-84. https://doi.org/10.1016/j.msea.2006.01.003