Abstract
In the context of semiconductor manufacturing, chemical vapor deposition (CVD) denotes the deposition of a solid from gaseous species via chemical reactions on the wafer surface. In order to obtain a realistic process model, this paper proposes the introduction of an intermediate scale model on the scale of a die. Its mathematical model is a reaction-diffusion equation with associated boundary conditions including a flux condition at the micro structured surface. The surface is given in general parameterized form. A homoganization technique from asymptotic analysis is used to replace this boundary condition by a condition on the flat surface to make a numerical solution feasible. Results from a mathematical test problem are included.
Original language | English (US) |
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Pages (from-to) | 399-403 |
Number of pages | 5 |
Journal | VLSI Design |
Volume | 6 |
Issue number | 1-4 |
DOIs | |
State | Published - 1998 |
Keywords
- Asymptotic Analysis
- Chemical Engineering
- Chemical Vapor Deposition
- Finite Differences
- Homogenization
- Partial Differential Equations
ASJC Scopus subject areas
- Hardware and Architecture
- Computer Graphics and Computer-Aided Design
- Electrical and Electronic Engineering