The combination of equipment scale and feature scale models for chemical vapor deposition via a homogenization technique

Matthias K. Gobbert, Timothy S. Cale, Christian Ringhofer

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In the context of semiconductor manufacturing, chemical vapor deposition (CVD) denotes the deposition of a solid from gaseous species via chemical reactions on the wafer surface. In order to obtain a realistic process model, this paper proposes the introduction of an intermediate scale model on the scale of a die. Its mathematical model is a reaction-diffusion equation with associated boundary conditions including a flux condition at the micro structured surface. The surface is given in general parameterized form. A homoganization technique from asymptotic analysis is used to replace this boundary condition by a condition on the flat surface to make a numerical solution feasible. Results from a mathematical test problem are included.

Original languageEnglish (US)
Pages (from-to)399-403
Number of pages5
JournalVLSI Design
Volume6
Issue number1-4
StatePublished - 1998

Fingerprint

Chemical vapor deposition
Boundary conditions
Asymptotic analysis
Chemical reactions
Mathematical models
Semiconductor materials
Fluxes

Keywords

  • Asymptotic Analysis
  • Chemical Engineering
  • Chemical Vapor Deposition
  • Finite Differences
  • Homogenization
  • Partial Differential Equations

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture

Cite this

The combination of equipment scale and feature scale models for chemical vapor deposition via a homogenization technique. / Gobbert, Matthias K.; Cale, Timothy S.; Ringhofer, Christian.

In: VLSI Design, Vol. 6, No. 1-4, 1998, p. 399-403.

Research output: Contribution to journalArticle

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