Abstract
We describe a lateral surface superlattice device embedded in a MOSFET structure. Control of the inversion layer density and the two-dimensional quantized inversion layer itself allows optimizing the sub-band energy level spacing for a variety of applications. In particular, the narrow bands that arise in the inversion layer itself lead to the possibility of readily achieving negative differential conductivity in the transport properties of electrons through the device.
Original language | English (US) |
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Pages (from-to) | 381-383 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 3 |
Issue number | 12 |
DOIs | |
State | Published - Dec 1982 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering