The Aharonov-Bohm effect in electrostatically defined heterojunction rings

C. J.B. Ford; T. J. Thornton; R. Newbury; M. Pepper; H. Ahmed; C. T. Foxon; J. J. Harris; C. Roberts

doi:10.1088/0022-3719/21/10/005

The Aharonov-Bohm effect in electrostatically defined heterojunction rings

C. J.B. Ford, T. J. Thornton, R. Newbury, M. Pepper, H. Ahmed, C. T. Foxon, J. J. Harris, C. Roberts

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

Micrometer-sized loops of two-dimensional electron gas have been made on GaAs-AlGaAs heterostructures by electrostatic confinement. A split gate is used to define the loop, allowing the width of the conducting channels to be varied by changing the gate voltage. The magnetoresistance has been measured at low temperatures (T<100 mK) and shows strong Aharonov-Bohm oscillations with amplitudes of up to 7% of the total resistance in the narrowest devices. The oscillations are strong out to B approximately=0.5 T and then die out as B increases to approximately=1 T, with a possible dependence on the channel width. Magnetic depopulation of the ID-sub-bands is also seen.

Original language	English (US)
Pages (from-to)	L325-L331
Journal	Journal of Physics C: Solid State Physics
Volume	21
Issue number	10
DOIs	https://doi.org/10.1088/0022-3719/21/10/005
State	Published - Apr 10 1988
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
General Engineering
General Physics and Astronomy

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10.1088/0022-3719/21/10/005

Cite this

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title = "The Aharonov-Bohm effect in electrostatically defined heterojunction rings",

abstract = "Micrometer-sized loops of two-dimensional electron gas have been made on GaAs-AlGaAs heterostructures by electrostatic confinement. A split gate is used to define the loop, allowing the width of the conducting channels to be varied by changing the gate voltage. The magnetoresistance has been measured at low temperatures (T<100 mK) and shows strong Aharonov-Bohm oscillations with amplitudes of up to 7% of the total resistance in the narrowest devices. The oscillations are strong out to B approximately=0.5 T and then die out as B increases to approximately=1 T, with a possible dependence on the channel width. Magnetic depopulation of the ID-sub-bands is also seen.",

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T1 - The Aharonov-Bohm effect in electrostatically defined heterojunction rings

AU - Ford, C. J.B.

AU - Thornton, T. J.

AU - Newbury, R.

AU - Pepper, M.

AU - Ahmed, H.

AU - Foxon, C. T.

AU - Harris, J. J.

AU - Roberts, C.

PY - 1988/4/10

Y1 - 1988/4/10

N2 - Micrometer-sized loops of two-dimensional electron gas have been made on GaAs-AlGaAs heterostructures by electrostatic confinement. A split gate is used to define the loop, allowing the width of the conducting channels to be varied by changing the gate voltage. The magnetoresistance has been measured at low temperatures (T<100 mK) and shows strong Aharonov-Bohm oscillations with amplitudes of up to 7% of the total resistance in the narrowest devices. The oscillations are strong out to B approximately=0.5 T and then die out as B increases to approximately=1 T, with a possible dependence on the channel width. Magnetic depopulation of the ID-sub-bands is also seen.

AB - Micrometer-sized loops of two-dimensional electron gas have been made on GaAs-AlGaAs heterostructures by electrostatic confinement. A split gate is used to define the loop, allowing the width of the conducting channels to be varied by changing the gate voltage. The magnetoresistance has been measured at low temperatures (T<100 mK) and shows strong Aharonov-Bohm oscillations with amplitudes of up to 7% of the total resistance in the narrowest devices. The oscillations are strong out to B approximately=0.5 T and then die out as B increases to approximately=1 T, with a possible dependence on the channel width. Magnetic depopulation of the ID-sub-bands is also seen.

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The Aharonov-Bohm effect in electrostatically defined heterojunction rings

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