The absolute luminescence quantum efficiency in hydrogenated amorphous silicon

Warren B. Jackson; R. J. Nemanich

doi:10.1016/0022-3093(83)90593-8

The absolute luminescence quantum efficiency in hydrogenated amorphous silicon

Warren B. Jackson, R. J. Nemanich

Research output: Contribution to journal › Article

24 Scopus citations

Abstract

Using photothermal deflection spectroscopy in liquid nitrogen, the absolute quantum efficiency of hydrogenated amorphous silicon has been determined to be 19%±10% at ∼72K. Correction for thermal quenching and Auger recombination indicates that the maximum efficiency is only 27%. No significant wavelength dependence is observed. The results suggest that other non-radiative mechansisms are important.

Original language	English (US)
Pages (from-to)	353-356
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	59-60
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(83)90593-8
State	Published - Dec 1983
Externally published	Yes

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ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

Cite this

Jackson, W. B., & Nemanich, R. J. (1983). The absolute luminescence quantum efficiency in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 59-60(PART 1), 353-356. https://doi.org/10.1016/0022-3093(83)90593-8

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10.1016/0022-3093(83)90593-8