\text{CdSe}_{\mathrm{x}}\text{Te}_{1-\mathrm{x}}/\text{CdTe} Devices with Reduced Interface Recombination through Novel Back Contacts and Group-V Doping

Adam Danielson, Darius Kuciauskas, Carey Reich, Siming Li, Arthur Onno, William Weigand, Anna Kindvall, Amit Munshi, Zachary Holman, Walajabad Sampath

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Since excellent carrier lifetimes and front interface electronic quality are now achieved, rear interface recombination can limit VOC in \text{CdSe}_{\mathrm{x}}\text{Te}_{1-\mathrm{x}}/\text{CdTe} solar cells. Several back-contact structures for devices were fabricated using combinations of tellurium, aluminum oxide, amorphous silicon, and indium tin oxide (ITO). Time-resolved photoluminescence was used to characterize such structures. We show increasingly improved interface passivation through the subsequent use of aluminum oxide, amorphous silicon, and ITO. Additionally, we show that arsenic-doped absorbers form a more passive interface with numerous back contact structures.

Original languageEnglish (US)
Title of host publication2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1811-1812
Number of pages2
ISBN (Electronic)9781728161150
DOIs
StatePublished - Jun 14 2020
Externally publishedYes
Event47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada
Duration: Jun 15 2020Aug 21 2020

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2020-June
ISSN (Print)0160-8371

Conference

Conference47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Country/TerritoryCanada
CityCalgary
Period6/15/208/21/20

Keywords

  • Aluminum oxide
  • Cadmium selenide telluride
  • Interface recombination
  • Time-resolved photoluminescence

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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