TY - GEN
T1 - \text{CdSe}_{\mathrm{x}}\text{Te}_{1-\mathrm{x}}/\text{CdTe} Devices with Reduced Interface Recombination through Novel Back Contacts and Group-V Doping
AU - Danielson, Adam
AU - Kuciauskas, Darius
AU - Reich, Carey
AU - Li, Siming
AU - Onno, Arthur
AU - Weigand, William
AU - Kindvall, Anna
AU - Munshi, Amit
AU - Holman, Zachary
AU - Sampath, Walajabad
N1 - Publisher Copyright:
© 2020 IEEE.
Copyright:
Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2020/6/14
Y1 - 2020/6/14
N2 - Since excellent carrier lifetimes and front interface electronic quality are now achieved, rear interface recombination can limit VOC in \text{CdSe}_{\mathrm{x}}\text{Te}_{1-\mathrm{x}}/\text{CdTe} solar cells. Several back-contact structures for devices were fabricated using combinations of tellurium, aluminum oxide, amorphous silicon, and indium tin oxide (ITO). Time-resolved photoluminescence was used to characterize such structures. We show increasingly improved interface passivation through the subsequent use of aluminum oxide, amorphous silicon, and ITO. Additionally, we show that arsenic-doped absorbers form a more passive interface with numerous back contact structures.
AB - Since excellent carrier lifetimes and front interface electronic quality are now achieved, rear interface recombination can limit VOC in \text{CdSe}_{\mathrm{x}}\text{Te}_{1-\mathrm{x}}/\text{CdTe} solar cells. Several back-contact structures for devices were fabricated using combinations of tellurium, aluminum oxide, amorphous silicon, and indium tin oxide (ITO). Time-resolved photoluminescence was used to characterize such structures. We show increasingly improved interface passivation through the subsequent use of aluminum oxide, amorphous silicon, and ITO. Additionally, we show that arsenic-doped absorbers form a more passive interface with numerous back contact structures.
KW - Aluminum oxide
KW - Cadmium selenide telluride
KW - Interface recombination
KW - Time-resolved photoluminescence
UR - http://www.scopus.com/inward/record.url?scp=85099585052&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85099585052&partnerID=8YFLogxK
U2 - 10.1109/PVSC45281.2020.9300624
DO - 10.1109/PVSC45281.2020.9300624
M3 - Conference contribution
AN - SCOPUS:85099585052
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1811
EP - 1812
BT - 2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Y2 - 15 June 2020 through 21 August 2020
ER -