Test structures for analyzing proton radiation effects in bipolar technologies

Hugh J. Barnaby, Ronald D. Schrimpf, Kenneth F. Galloway, Dennis R. Ball, Ronald L. Pease, Pascal Fouillat

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

Structures integrated onto a BiCMOS test chip are specially designed to characterize the complex mechanisms related to proton radiation response in bipolar technologies. Bipolar devices from a commercial process are modified to include independent gate terminals. Through the use of gate control, the effects of proton-induced defects on discrete bipolar devices and analog bipolar circuits can be analyzed independently, thereby facilitating a quantitative description of the nonlinear relationship between the radiation defects and electrical response at both the device and circuit level.

Original languageEnglish (US)
Pages (from-to)253-258
Number of pages6
JournalIEEE Transactions on Semiconductor Manufacturing
Volume16
Issue number2
DOIs
StatePublished - May 1 2003

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Keywords

  • Base current
  • Bipolar junction transistors
  • Bulk traps
  • Displacement damage
  • High-energy protons
  • Input bias current
  • Interface traps
  • Ionizing radiation
  • Oxide trapped charge
  • Surface recombination

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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