Test structures for analyzing proton radiation effects in bipolar technologies

Hugh J. Barnaby; Ronald D. Schrimpf; Kenneth F. Galloway; Dennis R. Ball; Ronald L. Pease; Pascal Fouillat

doi:10.1109/TSM.2003.811941

Test structures for analyzing proton radiation effects in bipolar technologies

Hugh J. Barnaby, Ronald D. Schrimpf, Kenneth F. Galloway, Dennis R. Ball, Ronald L. Pease, Pascal Fouillat

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Structures integrated onto a BiCMOS test chip are specially designed to characterize the complex mechanisms related to proton radiation response in bipolar technologies. Bipolar devices from a commercial process are modified to include independent gate terminals. Through the use of gate control, the effects of proton-induced defects on discrete bipolar devices and analog bipolar circuits can be analyzed independently, thereby facilitating a quantitative description of the nonlinear relationship between the radiation defects and electrical response at both the device and circuit level.

Original language	English (US)
Pages (from-to)	253-258
Number of pages	6
Journal	IEEE Transactions on Semiconductor Manufacturing
Volume	16
Issue number	2
DOIs	https://doi.org/10.1109/TSM.2003.811941
State	Published - May 2003
Externally published	Yes

Keywords

Base current
Bipolar junction transistors
Bulk traps
Displacement damage
High-energy protons
Input bias current
Interface traps
Ionizing radiation
Oxide trapped charge
Surface recombination

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/TSM.2003.811941

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title = "Test structures for analyzing proton radiation effects in bipolar technologies",

abstract = "Structures integrated onto a BiCMOS test chip are specially designed to characterize the complex mechanisms related to proton radiation response in bipolar technologies. Bipolar devices from a commercial process are modified to include independent gate terminals. Through the use of gate control, the effects of proton-induced defects on discrete bipolar devices and analog bipolar circuits can be analyzed independently, thereby facilitating a quantitative description of the nonlinear relationship between the radiation defects and electrical response at both the device and circuit level.",

keywords = "Base current, Bipolar junction transistors, Bulk traps, Displacement damage, High-energy protons, Input bias current, Interface traps, Ionizing radiation, Oxide trapped charge, Surface recombination",

author = "Barnaby, {Hugh J.} and Schrimpf, {Ronald D.} and Galloway, {Kenneth F.} and Ball, {Dennis R.} and Pease, {Ronald L.} and Pascal Fouillat",

note = "Funding Information: Manuscript received May 30, 2002; revised January 1, 2003. This work was supported by DTRA and the NASA GSRP program. H. J. Barnaby is with the Electrical and Computer Engineering Department, University of Arizona, Tucson, AZ 85721-0104 USA (e-mail: barnaby@ece.arizona.edu). R. D. Schrimpf, K. F. Galloway, and D. R. Ball are with the Electrical Engineering and Computer Science Department, Vanderbilt University, Nashville, TN 37235 USA (e-mail: ron.schrimpf@vanderbilt.edu; kenneth.f.galloway@vanderbilt.edu; scooter.ball@vanderbilt.edu). R. L. Pease is with the RLP Research Corporation, Albuquerque, NM 87122 USA (e-mail: rpease@mrcmicroe.com). P. Fouillat is with the University of Bordeaux 1, Bordeaux, France and also with the Lab IXL, Talence 33425, France (e-mail: fouillat@ixl.u.bordeaux.fr). Digital Object Identifier 10.1109/TSM.2003.811941",

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AU - Fouillat, Pascal

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KW - Displacement damage

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KW - Ionizing radiation

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KW - Surface recombination

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Test structures for analyzing proton radiation effects in bipolar technologies

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