Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors

V. R. D'Costa, Y. Y. Fang, J. Tolle, John Kouvetakis, Jose Menendez

Research output: Contribution to journalArticle

58 Scopus citations

Abstract

Ternary GeSiSn alloys have been recently demonstrated on Ge- and GeSn-buffered Si substrates. These alloys, with a two-dimensional compositional space, make it possible to decouple lattice constant and electronic structure for the first time in a group-IV system. This paper reviews the basic properties of the GeSiSn alloy, presents some new results on its optical properties, and discusses the approach that has been followed to model heterostructures containing GeSiSn layers for applications in modulators, quantum cascade lasers, and photovoltaics.

Original languageEnglish (US)
Pages (from-to)2531-2537
Number of pages7
JournalThin Solid Films
Volume518
Issue number9
DOIs
StatePublished - Feb 26 2010

Keywords

  • Group-IV semiconductors
  • Semiconductor alloys

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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