TY - JOUR
T1 - Ternary GeSiSn alloys
T2 - New opportunities for strain and band gap engineering using group-IV semiconductors
AU - D'Costa, V. R.
AU - Fang, Y. Y.
AU - Tolle, J.
AU - Kouvetakis, John
AU - Menendez, Jose
N1 - Funding Information:
This work was partially supported by the US Air Force Office of Scientific Research under grant FA9550-60-01-0442 (MURI program) and by the US Department of Energy under grant DE-FG36-08GO18003.
PY - 2010/2/26
Y1 - 2010/2/26
N2 - Ternary GeSiSn alloys have been recently demonstrated on Ge- and GeSn-buffered Si substrates. These alloys, with a two-dimensional compositional space, make it possible to decouple lattice constant and electronic structure for the first time in a group-IV system. This paper reviews the basic properties of the GeSiSn alloy, presents some new results on its optical properties, and discusses the approach that has been followed to model heterostructures containing GeSiSn layers for applications in modulators, quantum cascade lasers, and photovoltaics.
AB - Ternary GeSiSn alloys have been recently demonstrated on Ge- and GeSn-buffered Si substrates. These alloys, with a two-dimensional compositional space, make it possible to decouple lattice constant and electronic structure for the first time in a group-IV system. This paper reviews the basic properties of the GeSiSn alloy, presents some new results on its optical properties, and discusses the approach that has been followed to model heterostructures containing GeSiSn layers for applications in modulators, quantum cascade lasers, and photovoltaics.
KW - Group-IV semiconductors
KW - Semiconductor alloys
UR - http://www.scopus.com/inward/record.url?scp=76049092001&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=76049092001&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2009.09.149
DO - 10.1016/j.tsf.2009.09.149
M3 - Article
AN - SCOPUS:76049092001
SN - 0040-6090
VL - 518
SP - 2531
EP - 2537
JO - Thin Solid Films
JF - Thin Solid Films
IS - 9
ER -