Abstract

In the present paper we review some of the present technologies of interest for terahertz (THz) applications, and the physics and modeling of ultra-high frequency devices such as high electron mobility transistors (HEMTs) which have achieved THz frequencies. We present results of full band Cellular Monte Carlo (CMC) physics based simulation of InP and GaN based HEMTs of current interest to industry, and in particular, we address the current limitations in their frequency response in terms of the material and device structure, and the ultimate limits of scaling for such technologies.

Original languageEnglish (US)
Title of host publicationMicro- and Nanotechnology Sensors, Systems, and Applications VI
PublisherSPIE
ISBN (Print)9781628410204
DOIs
StatePublished - Jan 1 2014
EventMicro- and Nanotechnology Sensors, Systems, and Applications VI - Baltimore, MD, United States
Duration: May 5 2014May 9 2014

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9083
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherMicro- and Nanotechnology Sensors, Systems, and Applications VI
CountryUnited States
CityBaltimore, MD
Period5/5/145/9/14

Keywords

  • CMC
  • Cut-off frequency
  • EMC
  • Effective gate length
  • GaN
  • HEMTs
  • THZ

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Soligo, R., Saraniti, M., & Goodnick, S. (2014). Terahertz devices and device modeling. In Micro- and Nanotechnology Sensors, Systems, and Applications VI [90830B] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9083). SPIE. https://doi.org/10.1117/12.2049599