Abstract

In the present paper we review some of the present technologies of interest for terahertz (THz) applications, and the physics and modeling of ultra-high frequency devices such as high electron mobility transistors (HEMTs) which have achieved THz frequencies. We present results of full band Cellular Monte Carlo (CMC) physics based simulation of InP and GaN based HEMTs of current interest to industry, and in particular, we address the current limitations in their frequency response in terms of the material and device structure, and the ultimate limits of scaling for such technologies.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSPIE
Volume9083
ISBN (Print)9781628410204
DOIs
StatePublished - 2014
EventMicro- and Nanotechnology Sensors, Systems, and Applications VI - Baltimore, MD, United States
Duration: May 5 2014May 9 2014

Other

OtherMicro- and Nanotechnology Sensors, Systems, and Applications VI
CountryUnited States
CityBaltimore, MD
Period5/5/145/9/14

Fingerprint

High electron mobility transistors
high electron mobility transistors
UHF devices
Physics
Electron
physics
ultrahigh frequencies
Frequency Response
Modeling
frequency response
Frequency response
industries
Scaling
Industry
scaling
Simulation
simulation
Review

Keywords

  • CMC
  • Cut-off frequency
  • Effective gate length
  • EMC
  • GaN
  • HEMTs
  • THZ

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Soligo, R., Saraniti, M., & Goodnick, S. (2014). Terahertz devices and device modeling. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 9083). [90830B] SPIE. https://doi.org/10.1117/12.2049599

Terahertz devices and device modeling. / Soligo, R.; Saraniti, Marco; Goodnick, Stephen.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9083 SPIE, 2014. 90830B.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Soligo, R, Saraniti, M & Goodnick, S 2014, Terahertz devices and device modeling. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 9083, 90830B, SPIE, Micro- and Nanotechnology Sensors, Systems, and Applications VI, Baltimore, MD, United States, 5/5/14. https://doi.org/10.1117/12.2049599
Soligo R, Saraniti M, Goodnick S. Terahertz devices and device modeling. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9083. SPIE. 2014. 90830B https://doi.org/10.1117/12.2049599
Soligo, R. ; Saraniti, Marco ; Goodnick, Stephen. / Terahertz devices and device modeling. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9083 SPIE, 2014.
@inproceedings{171ada1b8dec43ba9eb2d2def8fac63b,
title = "Terahertz devices and device modeling",
abstract = "In the present paper we review some of the present technologies of interest for terahertz (THz) applications, and the physics and modeling of ultra-high frequency devices such as high electron mobility transistors (HEMTs) which have achieved THz frequencies. We present results of full band Cellular Monte Carlo (CMC) physics based simulation of InP and GaN based HEMTs of current interest to industry, and in particular, we address the current limitations in their frequency response in terms of the material and device structure, and the ultimate limits of scaling for such technologies.",
keywords = "CMC, Cut-off frequency, Effective gate length, EMC, GaN, HEMTs, THZ",
author = "R. Soligo and Marco Saraniti and Stephen Goodnick",
year = "2014",
doi = "10.1117/12.2049599",
language = "English (US)",
isbn = "9781628410204",
volume = "9083",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",

}

TY - GEN

T1 - Terahertz devices and device modeling

AU - Soligo, R.

AU - Saraniti, Marco

AU - Goodnick, Stephen

PY - 2014

Y1 - 2014

N2 - In the present paper we review some of the present technologies of interest for terahertz (THz) applications, and the physics and modeling of ultra-high frequency devices such as high electron mobility transistors (HEMTs) which have achieved THz frequencies. We present results of full band Cellular Monte Carlo (CMC) physics based simulation of InP and GaN based HEMTs of current interest to industry, and in particular, we address the current limitations in their frequency response in terms of the material and device structure, and the ultimate limits of scaling for such technologies.

AB - In the present paper we review some of the present technologies of interest for terahertz (THz) applications, and the physics and modeling of ultra-high frequency devices such as high electron mobility transistors (HEMTs) which have achieved THz frequencies. We present results of full band Cellular Monte Carlo (CMC) physics based simulation of InP and GaN based HEMTs of current interest to industry, and in particular, we address the current limitations in their frequency response in terms of the material and device structure, and the ultimate limits of scaling for such technologies.

KW - CMC

KW - Cut-off frequency

KW - Effective gate length

KW - EMC

KW - GaN

KW - HEMTs

KW - THZ

UR - http://www.scopus.com/inward/record.url?scp=84905728010&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84905728010&partnerID=8YFLogxK

U2 - 10.1117/12.2049599

DO - 10.1117/12.2049599

M3 - Conference contribution

AN - SCOPUS:84905728010

SN - 9781628410204

VL - 9083

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - SPIE

ER -