Terahertz devices and device modeling

R. Soligo; Marco Saraniti; Stephen Goodnick

doi:10.1117/12.2049599

Terahertz devices and device modeling

R. Soligo, Marco Saraniti, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In the present paper we review some of the present technologies of interest for terahertz (THz) applications, and the physics and modeling of ultra-high frequency devices such as high electron mobility transistors (HEMTs) which have achieved THz frequencies. We present results of full band Cellular Monte Carlo (CMC) physics based simulation of InP and GaN based HEMTs of current interest to industry, and in particular, we address the current limitations in their frequency response in terms of the material and device structure, and the ultimate limits of scaling for such technologies.

Original language	English (US)
Title of host publication	Micro- and Nanotechnology Sensors, Systems, and Applications VI
Publisher	SPIE
ISBN (Print)	9781628410204
DOIs	https://doi.org/10.1117/12.2049599
State	Published - 2014
Event	Micro- and Nanotechnology Sensors, Systems, and Applications VI - Baltimore, MD, United States Duration: May 5 2014 → May 9 2014

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9083
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Other

Other	Micro- and Nanotechnology Sensors, Systems, and Applications VI
Country/Territory	United States
City	Baltimore, MD
Period	5/5/14 → 5/9/14

Keywords

CMC
Cut-off frequency
EMC
Effective gate length
GaN
HEMTs
THZ

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2049599

Cite this

Soligo, R, Saraniti, M & Goodnick, S 2014, Terahertz devices and device modeling. in Micro- and Nanotechnology Sensors, Systems, and Applications VI., 90830B, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9083, SPIE, Micro- and Nanotechnology Sensors, Systems, and Applications VI, Baltimore, MD, United States, 5/5/14. https://doi.org/10.1117/12.2049599

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abstract = "In the present paper we review some of the present technologies of interest for terahertz (THz) applications, and the physics and modeling of ultra-high frequency devices such as high electron mobility transistors (HEMTs) which have achieved THz frequencies. We present results of full band Cellular Monte Carlo (CMC) physics based simulation of InP and GaN based HEMTs of current interest to industry, and in particular, we address the current limitations in their frequency response in terms of the material and device structure, and the ultimate limits of scaling for such technologies.",

keywords = "CMC, Cut-off frequency, EMC, Effective gate length, GaN, HEMTs, THZ",

author = "R. Soligo and Marco Saraniti and Stephen Goodnick",

year = "2014",

doi = "10.1117/12.2049599",

language = "English (US)",

isbn = "9781628410204",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

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AU - Goodnick, Stephen

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AB - In the present paper we review some of the present technologies of interest for terahertz (THz) applications, and the physics and modeling of ultra-high frequency devices such as high electron mobility transistors (HEMTs) which have achieved THz frequencies. We present results of full band Cellular Monte Carlo (CMC) physics based simulation of InP and GaN based HEMTs of current interest to industry, and in particular, we address the current limitations in their frequency response in terms of the material and device structure, and the ultimate limits of scaling for such technologies.

KW - CMC

KW - Cut-off frequency

KW - EMC

KW - Effective gate length

KW - GaN

KW - HEMTs

KW - THZ

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M3 - Conference contribution

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Micro- and Nanotechnology Sensors, Systems, and Applications VI

PB - SPIE

T2 - Micro- and Nanotechnology Sensors, Systems, and Applications VI

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ER -

Terahertz devices and device modeling

Abstract

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Keywords

ASJC Scopus subject areas

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