In the present paper we review some of the present technologies of interest for terahertz (THz) applications, and the physics and modeling of ultra-high frequency devices such as high electron mobility transistors (HEMTs) which have achieved THz frequencies. We present results of full band Cellular Monte Carlo (CMC) physics based simulation of InP and GaN based HEMTs of current interest to industry, and in particular, we address the current limitations in their frequency response in terms of the material and device structure, and the ultimate limits of scaling for such technologies.

Original languageEnglish (US)
Title of host publicationMicro- and Nanotechnology Sensors, Systems, and Applications VI
ISBN (Print)9781628410204
StatePublished - Jan 1 2014
EventMicro- and Nanotechnology Sensors, Systems, and Applications VI - Baltimore, MD, United States
Duration: May 5 2014May 9 2014

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


OtherMicro- and Nanotechnology Sensors, Systems, and Applications VI
Country/TerritoryUnited States
CityBaltimore, MD


  • CMC
  • Cut-off frequency
  • EMC
  • Effective gate length
  • GaN
  • HEMTs
  • THZ

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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