Abstract

We provide design guidelines for InGaAs HEMT nanoscale scaling from the analysis of results obtained through our full band Cellular Monte Carlo simulator. In particular, improved RF performance can be obtained preserving a minimum aspect ratio of 5, limiting in such way short channel effects and reducing the electron transit time through the reduction of the effective gate length. Further improvement can be obtained reducing the source-gate access region lentgh. Thus, the effective gate length relative increase and the parasitic intrinsic access region resistance are found to be the main factors limiting nanoscale scaling in THz InGaAs HEMTs.

Original languageEnglish (US)
Title of host publication2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2011 - Digest of Papers
Pages193-196
Number of pages4
DOIs
StatePublished - Mar 25 2011
Event2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2011 - Phoenix, AR, United States
Duration: Jan 16 2011Jan 19 2011

Publication series

Name2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2011 - Digest of Papers

Other

Other2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2011
CountryUnited States
CityPhoenix, AR
Period1/16/111/19/11

Keywords

  • Aspect ratio
  • Effective gate length
  • InGaAs
  • Nanoscale devices
  • Nanoscale gate length
  • Terahertz

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Guerra, D., Marino, F. A., Akis, R., Ferry, D. K., Goodnick, S., & Saraniti, M. (2011). Terahertz-capability nanoscale InGaAs HEMT design guidelines by means of full-band Monte Carlo device simulations. In 2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2011 - Digest of Papers (pp. 193-196). [5719347] (2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2011 - Digest of Papers). https://doi.org/10.1109/SIRF.2011.5719347