@inproceedings{3f85b407685c49418c78a67222264371,
title = "Terahertz-capability nanoscale InGaAs HEMT design guidelines by means of full-band Monte Carlo device simulations",
abstract = "We provide design guidelines for InGaAs HEMT nanoscale scaling from the analysis of results obtained through our full band Cellular Monte Carlo simulator. In particular, improved RF performance can be obtained preserving a minimum aspect ratio of 5, limiting in such way short channel effects and reducing the electron transit time through the reduction of the effective gate length. Further improvement can be obtained reducing the source-gate access region lentgh. Thus, the effective gate length relative increase and the parasitic intrinsic access region resistance are found to be the main factors limiting nanoscale scaling in THz InGaAs HEMTs.",
keywords = "Aspect ratio, Effective gate length, InGaAs, Nanoscale devices, Nanoscale gate length, Terahertz",
author = "Diego Guerra and Marino, {Fabio A.} and R. Akis and Ferry, {David K.} and Stephen Goodnick and Marco Saraniti",
year = "2011",
doi = "10.1109/SIRF.2011.5719347",
language = "English (US)",
isbn = "9781424480593",
series = "2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2011 - Digest of Papers",
pages = "193--196",
booktitle = "2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2011 - Digest of Papers",
note = "2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2011 ; Conference date: 16-01-2011 Through 19-01-2011",
}