Template structure at the silicon/amorphous-silicide interface

Peter Bennett, M. Y. Lee, P. Yang, R. Schuster, P. J. Eng, I. K. Robinson

Research output: Contribution to journalArticle

14 Scopus citations


Surface x-ray diffraction was used to monitor the reaction of Ni on Si(111) at room temperature. Intensity oscillations during deposition signify that a layerwise reaction occurs for the first 30 Å of metal deposited, forming a silicide overlayer with stoichiometry Ni2Si. Structural analysis of the interfacial layers detects an epitaxial and commensurate phase, Ni2Si- θ, with long range order imposed by the substrate but with very large local atomic displacements. This epitaxial structure remains at the interface as amorphous silicide forms above it.

Original languageEnglish (US)
Pages (from-to)2726-2729
Number of pages4
JournalPhysical Review Letters
Issue number14
StatePublished - Jan 1 1995


ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Bennett, P., Lee, M. Y., Yang, P., Schuster, R., Eng, P. J., & Robinson, I. K. (1995). Template structure at the silicon/amorphous-silicide interface. Physical Review Letters, 75(14), 2726-2729. https://doi.org/10.1103/PhysRevLett.75.2726