Temperature Response on NPN and PNP Bipolar Junction Transistors after Total Ionizing Dose Irradiation Exposure

Aymeric Privat, H. J. Barnaby, B. S. Tolleson, K. Muthuseenu, P. C. Adell

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A temperature-dependent analytical model for total-ionizing-dose-induced excess base current in BJTs is proposed. Model captures base current evolution with temperature on irradiated parts. In this work, BJTs are irradiated at room temperature. Base currents are obtained and the concentrations of oxide defects created during irradiation are calculated. Both base current and defect densities resulting from room temperature irradiations are used as inputs to SPICE simulations and the analytical model. Experimental data obtained from measurements at both low and high temperatures on parts irradiated at room temperature are shown to compare well to the simulation results and analytical model over a range of temperatures.

Original languageEnglish (US)
Title of host publication2019 19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728156996
DOIs
StatePublished - 2019
Externally publishedYes
Event19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019 - Montpellier, France
Duration: Sep 16 2019Sep 20 2019

Publication series

Name2019 19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019

Conference

Conference19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019
Country/TerritoryFrance
CityMontpellier
Period9/16/199/20/19

Keywords

  • Analytical model
  • bipolar transistor
  • ELDRS
  • NPN
  • PNP
  • SPICE
  • temperature
  • total ionizing dose

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Atomic and Molecular Physics, and Optics
  • Radiation

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