Temperature-dependent time-resolved photoluminescence study of monocrystalline CdTe/MgCdTe double heterostructures with low defect density

Xin Hao Zhao, Michael J. Dinezza, Shi Liu, Pathiraja A R D Jayathilaka, Odille C. Noriega, Thomas H. Myers, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Confocal photoluminescence scans of monocrystalline CdTe/MgCdTe double heterostructures epitaxially grown on lattice-matched InSb substrates reveal very low twin defect density, below 1 × 105 cm-2. Room-temperature Shockley-Read-Hall (SRH) lifetimes of these samples are determined in the range of 35 ns to 86 ns using time-resolved photoluminescence (TRPL) measurements. Temperature-dependent TRPL measurements show that the carrier lifetime reaches a peak of 910 ns at 200 K. Excitation-dependent PL measurements reveal the radiative recombination coefficient of CdTe to be 4.3 × 10-9 cm3·s-1.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3272-3275
Number of pages4
ISBN (Electronic)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/TerritoryUnited States
CityDenver
Period6/8/146/13/14

Keywords

  • CdTe
  • carrier lifetime
  • defects
  • heterostructure
  • molecular beam epitaxy
  • photoluminescence

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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