Abstract

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco® Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.

Original languageEnglish (US)
Article number225703
JournalJournal of Applied Physics
Volume119
Issue number22
DOIs
StatePublished - Jun 14 2016

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Schottky diodes
diamonds
simulation
temperature
carrier mobility
operating temperature
electrical faults
phosphorus
high voltages
boron
thermal conductivity
breakdown
current density
activation energy
computer programs
impurities
electrical resistivity
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Temperature dependent simulation of diamond depleted Schottky PIN diodes. / Hathwar, Raghuraj; Dutta, Maitreya; Koeck, Franz A M; Nemanich, Robert; Chowdhury, Srabanti; Goodnick, Stephen.

In: Journal of Applied Physics, Vol. 119, No. 22, 225703, 14.06.2016.

Research output: Contribution to journalArticle

Hathwar, Raghuraj ; Dutta, Maitreya ; Koeck, Franz A M ; Nemanich, Robert ; Chowdhury, Srabanti ; Goodnick, Stephen. / Temperature dependent simulation of diamond depleted Schottky PIN diodes. In: Journal of Applied Physics. 2016 ; Vol. 119, No. 22.
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