Temperature-dependent photoluminescence of Ge/Si and Ge 1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content

Mee Yi Ryu, Tom R. Harris, Y. K. Yeo, R. T. Beeler, John Kouvetakis

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Abstract

Temperature (T)-dependent photoluminescence (PL) has been investigated for both p-Ge and n-Ge1-ySny films grown on Si substrates. For the p-Ge, strong direct bandgap (ED) along with weak indirect bandgap related (EID) PL at low temperatures (LTs) and strong E D PL at room temperature (RT) were observed. In contrast, for the n-Ge1-ySny, very strong dominant EID PL at LT and strong ED PL were observed at RT. This T-dependent PL study indicates that the indirect-to-direct bandgap transitions of Ge 1-ySny might take place at much lower Sn contents than the theory predicts, suggesting that these Ge1-ySny could become very promising direct bandgap semiconductors.

Original languageEnglish (US)
Article number171908
JournalApplied Physics Letters
Volume102
Issue number17
DOIs
StatePublished - Apr 29 2013

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photoluminescence
temperature
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Temperature-dependent photoluminescence of Ge/Si and Ge 1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content. / Ryu, Mee Yi; Harris, Tom R.; Yeo, Y. K.; Beeler, R. T.; Kouvetakis, John.

In: Applied Physics Letters, Vol. 102, No. 17, 171908, 29.04.2013.

Research output: Contribution to journalArticle

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abstract = "Temperature (T)-dependent photoluminescence (PL) has been investigated for both p-Ge and n-Ge1-ySny films grown on Si substrates. For the p-Ge, strong direct bandgap (ED) along with weak indirect bandgap related (EID) PL at low temperatures (LTs) and strong E D PL at room temperature (RT) were observed. In contrast, for the n-Ge1-ySny, very strong dominant EID PL at LT and strong ED PL were observed at RT. This T-dependent PL study indicates that the indirect-to-direct bandgap transitions of Ge 1-ySny might take place at much lower Sn contents than the theory predicts, suggesting that these Ge1-ySny could become very promising direct bandgap semiconductors.",
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AU - Beeler, R. T.

AU - Kouvetakis, John

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