Temperature-Dependent Optical Properties and Bandgap Characteristics of InAs/GaAs Sub-monolayer Quantum Dot Investigated by Photoreflectance Spectroscopy

Minseak Kim; Sang Jo Lee; Hyun Jun Jo; Geun Hyeong Kim; Yeong Ho Kim; Sang Jun Lee; Christiana B. Honsberg; Jong Su Kim

doi:10.5757/ASCT.2019.28.1.9

Temperature-Dependent Optical Properties and Bandgap Characteristics of InAs/GaAs Sub-monolayer Quantum Dot Investigated by Photoreflectance Spectroscopy

Minseak Kim, Sang Jo Lee, Hyun Jun Jo, Geun Hyeong Kim, Yeong Ho Kim, Sang Jun Lee, Christiana B. Honsberg, Jong Su Kim

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

InAs/GaAs submonolayer quantum dots (SML-QD) were investigated by temperature dependent photoreflectance (PR) spectroscopy. To investigate the optical properties of SML-QD, GaAs and InAs SML-QD related PR spectra were monitored at different temperatures. Two notable signals were observed in the SML-QD and GaAs regions. The PR spectra of SML-QD region were interpreted by the third-derivative functional form method. We observe the oscillatory signal above the GaAs band gap energy (E_g) due to the Franz-Keldysh effect caused by an interface electric field (F). At room temperature, the PR transition of SML-QD was obtained at near ~1.3 eV with a broadening of 29.5 meV. The F was obtained from the Aspnes’ numerical PR analysis. The F was changed from 14 to 12 kV/cm by decreasing the temperature from 300 to 140 K causing a thermal induced carrier distribution near the interfaces.

Original language	English (US)
Pages (from-to)	9-12
Number of pages	4
Journal	Applied Science and Convergence Technology
Volume	28
Issue number	1
DOIs	https://doi.org/10.5757/ASCT.2019.28.1.9
State	Published - 2019
Externally published	Yes

Keywords

InAs/GaAs
Photoreflectance
Submonolayer quantum dot

ASJC Scopus subject areas

Materials Science (miscellaneous)
Condensed Matter Physics
Physical and Theoretical Chemistry
Electrical and Electronic Engineering

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10.5757/ASCT.2019.28.1.9

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@article{6f290b34f3104b729db592397f01989d,

title = "Temperature-Dependent Optical Properties and Bandgap Characteristics of InAs/GaAs Sub-monolayer Quantum Dot Investigated by Photoreflectance Spectroscopy",

abstract = "InAs/GaAs submonolayer quantum dots (SML-QD) were investigated by temperature dependent photoreflectance (PR) spectroscopy. To investigate the optical properties of SML-QD, GaAs and InAs SML-QD related PR spectra were monitored at different temperatures. Two notable signals were observed in the SML-QD and GaAs regions. The PR spectra of SML-QD region were interpreted by the third-derivative functional form method. We observe the oscillatory signal above the GaAs band gap energy (Eg) due to the Franz-Keldysh effect caused by an interface electric field (F). At room temperature, the PR transition of SML-QD was obtained at near ~1.3 eV with a broadening of 29.5 meV. The F was obtained from the Aspnes{\textquoteright} numerical PR analysis. The F was changed from 14 to 12 kV/cm by decreasing the temperature from 300 to 140 K causing a thermal induced carrier distribution near the interfaces.",

keywords = "InAs/GaAs, Photoreflectance, Submonolayer quantum dot",

author = "Minseak Kim and Lee, {Sang Jo} and Jo, {Hyun Jun} and Kim, {Geun Hyeong} and Kim, {Yeong Ho} and Lee, {Sang Jun} and Honsberg, {Christiana B.} and Kim, {Jong Su}",

note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Education (NRF2017R1A6A3A11028070, NRF-2018R1D1A3B 0705 0824, and NRF-2018M3A7B4069996) Publisher Copyright: {\textcopyright} The Korean Vacuum Society.",

year = "2019",

doi = "10.5757/ASCT.2019.28.1.9",

language = "English (US)",

volume = "28",

pages = "9--12",

journal = "Applied Science and Convergence Technology",

issn = "1225-8822",

publisher = "Korean Vacuum Society",

number = "1",

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TY - JOUR

T1 - Temperature-Dependent Optical Properties and Bandgap Characteristics of InAs/GaAs Sub-monolayer Quantum Dot Investigated by Photoreflectance Spectroscopy

AU - Kim, Minseak

AU - Lee, Sang Jo

AU - Jo, Hyun Jun

AU - Kim, Geun Hyeong

AU - Kim, Yeong Ho

AU - Lee, Sang Jun

AU - Honsberg, Christiana B.

AU - Kim, Jong Su

N1 - Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Education (NRF2017R1A6A3A11028070, NRF-2018R1D1A3B 0705 0824, and NRF-2018M3A7B4069996) Publisher Copyright: © The Korean Vacuum Society.

PY - 2019

Y1 - 2019

N2 - InAs/GaAs submonolayer quantum dots (SML-QD) were investigated by temperature dependent photoreflectance (PR) spectroscopy. To investigate the optical properties of SML-QD, GaAs and InAs SML-QD related PR spectra were monitored at different temperatures. Two notable signals were observed in the SML-QD and GaAs regions. The PR spectra of SML-QD region were interpreted by the third-derivative functional form method. We observe the oscillatory signal above the GaAs band gap energy (Eg) due to the Franz-Keldysh effect caused by an interface electric field (F). At room temperature, the PR transition of SML-QD was obtained at near ~1.3 eV with a broadening of 29.5 meV. The F was obtained from the Aspnes’ numerical PR analysis. The F was changed from 14 to 12 kV/cm by decreasing the temperature from 300 to 140 K causing a thermal induced carrier distribution near the interfaces.

AB - InAs/GaAs submonolayer quantum dots (SML-QD) were investigated by temperature dependent photoreflectance (PR) spectroscopy. To investigate the optical properties of SML-QD, GaAs and InAs SML-QD related PR spectra were monitored at different temperatures. Two notable signals were observed in the SML-QD and GaAs regions. The PR spectra of SML-QD region were interpreted by the third-derivative functional form method. We observe the oscillatory signal above the GaAs band gap energy (Eg) due to the Franz-Keldysh effect caused by an interface electric field (F). At room temperature, the PR transition of SML-QD was obtained at near ~1.3 eV with a broadening of 29.5 meV. The F was obtained from the Aspnes’ numerical PR analysis. The F was changed from 14 to 12 kV/cm by decreasing the temperature from 300 to 140 K causing a thermal induced carrier distribution near the interfaces.

KW - InAs/GaAs

KW - Photoreflectance

KW - Submonolayer quantum dot

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Temperature-Dependent Optical Properties and Bandgap Characteristics of InAs/GaAs Sub-monolayer Quantum Dot Investigated by Photoreflectance Spectroscopy

Abstract

Keywords

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