Temperature-dependent minority carrier lifetimes of InAs/InAs 1-xSbx type-II superlattices

E. H. Steenbergen, B. C. Connelly, G. D. Metcalfe, H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J. M. Fastenau, A. W K Liu, S. Elhamri, O. O. Cellek, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Scopus citations

Abstract

Temperature-dependent minority carrier lifetimes of InAs/InAs 1-xSbx type-II superlattices are presented. The longest lifetime at 11 K is 504 ± 40 ns and at 77 K is 412 ± 25 ns. Samples with long periods and small wave function overlaps have both non-radiative and radiative recombination mechanisms apparent, with comparable contributions from both near 77 K, and radiative recombination dominating at low temperatures. Samples with short periods and large wave function overlaps have radiative recombination dominating from 10 K until ∼200 K. The improved lifetimes observed will enable long minority carrier lifetime superlattices to be designed for high quantum efficiency, low dark current infrared detectors.

Original languageEnglish (US)
Title of host publicationInfrared Sensors, Devices, and Applications II
DOIs
StatePublished - Dec 1 2012
EventInfrared Sensors, Devices, and Applications II - San Diego, CA, United States
Duration: Aug 14 2012Aug 15 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8512
ISSN (Print)0277-786X

Other

OtherInfrared Sensors, Devices, and Applications II
CountryUnited States
CitySan Diego, CA
Period8/14/128/15/12

    Fingerprint

Keywords

  • Infrared
  • Lifetime
  • Photoluminescence
  • Superlattice
  • Temperature-dependent

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Steenbergen, E. H., Connelly, B. C., Metcalfe, G. D., Shen, H., Wraback, M., Lubyshev, D., Qiu, Y., Fastenau, J. M., Liu, A. W. K., Elhamri, S., Cellek, O. O., & Zhang, Y-H. (2012). Temperature-dependent minority carrier lifetimes of InAs/InAs 1-xSbx type-II superlattices. In Infrared Sensors, Devices, and Applications II [85120L] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8512). https://doi.org/10.1117/12.930949