Temperature-dependent minority carrier lifetimes of InAs/InAs 1-xSbx type-II superlattices

E. H. Steenbergen, B. C. Connelly, G. D. Metcalfe, H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J. M. Fastenau, A. W K Liu, S. Elhamri, O. O. Cellek, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Citations (Scopus)

Abstract

Temperature-dependent minority carrier lifetimes of InAs/InAs 1-xSbx type-II superlattices are presented. The longest lifetime at 11 K is 504 ± 40 ns and at 77 K is 412 ± 25 ns. Samples with long periods and small wave function overlaps have both non-radiative and radiative recombination mechanisms apparent, with comparable contributions from both near 77 K, and radiative recombination dominating at low temperatures. Samples with short periods and large wave function overlaps have radiative recombination dominating from 10 K until ∼200 K. The improved lifetimes observed will enable long minority carrier lifetime superlattices to be designed for high quantum efficiency, low dark current infrared detectors.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume8512
DOIs
StatePublished - 2012
EventInfrared Sensors, Devices, and Applications II - San Diego, CA, United States
Duration: Aug 14 2012Aug 15 2012

Other

OtherInfrared Sensors, Devices, and Applications II
CountryUnited States
CitySan Diego, CA
Period8/14/128/15/12

Fingerprint

Superlattices
Carrier lifetime
radiative recombination
carrier lifetime
Wave functions
minority carriers
superlattices
Lifetime
Recombination
Infrared detectors
Dependent
Dark currents
Quantum efficiency
wave functions
Wave Function
Overlap
life (durability)
infrared detectors
dark current
Small Function

Keywords

  • Infrared
  • Lifetime
  • Photoluminescence
  • Superlattice
  • Temperature-dependent

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Steenbergen, E. H., Connelly, B. C., Metcalfe, G. D., Shen, H., Wraback, M., Lubyshev, D., ... Zhang, Y-H. (2012). Temperature-dependent minority carrier lifetimes of InAs/InAs 1-xSbx type-II superlattices. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8512). [85120L] https://doi.org/10.1117/12.930949

Temperature-dependent minority carrier lifetimes of InAs/InAs 1-xSbx type-II superlattices. / Steenbergen, E. H.; Connelly, B. C.; Metcalfe, G. D.; Shen, H.; Wraback, M.; Lubyshev, D.; Qiu, Y.; Fastenau, J. M.; Liu, A. W K; Elhamri, S.; Cellek, O. O.; Zhang, Yong-Hang.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8512 2012. 85120L.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Steenbergen, EH, Connelly, BC, Metcalfe, GD, Shen, H, Wraback, M, Lubyshev, D, Qiu, Y, Fastenau, JM, Liu, AWK, Elhamri, S, Cellek, OO & Zhang, Y-H 2012, Temperature-dependent minority carrier lifetimes of InAs/InAs 1-xSbx type-II superlattices. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 8512, 85120L, Infrared Sensors, Devices, and Applications II, San Diego, CA, United States, 8/14/12. https://doi.org/10.1117/12.930949
Steenbergen EH, Connelly BC, Metcalfe GD, Shen H, Wraback M, Lubyshev D et al. Temperature-dependent minority carrier lifetimes of InAs/InAs 1-xSbx type-II superlattices. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8512. 2012. 85120L https://doi.org/10.1117/12.930949
Steenbergen, E. H. ; Connelly, B. C. ; Metcalfe, G. D. ; Shen, H. ; Wraback, M. ; Lubyshev, D. ; Qiu, Y. ; Fastenau, J. M. ; Liu, A. W K ; Elhamri, S. ; Cellek, O. O. ; Zhang, Yong-Hang. / Temperature-dependent minority carrier lifetimes of InAs/InAs 1-xSbx type-II superlattices. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8512 2012.
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