Temperature-dependent minority carrier lifetimes of InAs/InAs 1-xSbx type-II superlattices

E. H. Steenbergen; B. C. Connelly; G. D. Metcalfe; H. Shen; M. Wraback; D. Lubyshev; Y. Qiu; J. M. Fastenau; A. W K Liu; S. Elhamri; O. O. Cellek; Yong-Hang Zhang

doi:10.1117/12.930949

Temperature-dependent minority carrier lifetimes of InAs/InAs _1-xSb_x type-II superlattices

E. H. Steenbergen, B. C. Connelly, G. D. Metcalfe, H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J. M. Fastenau, A. W K Liu, S. Elhamri, O. O. Cellek, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

15 Scopus citations

Abstract

Temperature-dependent minority carrier lifetimes of InAs/InAs _1-xSb_x type-II superlattices are presented. The longest lifetime at 11 K is 504 ± 40 ns and at 77 K is 412 ± 25 ns. Samples with long periods and small wave function overlaps have both non-radiative and radiative recombination mechanisms apparent, with comparable contributions from both near 77 K, and radiative recombination dominating at low temperatures. Samples with short periods and large wave function overlaps have radiative recombination dominating from 10 K until ∼200 K. The improved lifetimes observed will enable long minority carrier lifetime superlattices to be designed for high quantum efficiency, low dark current infrared detectors.

Original language	English (US)
Title of host publication	Infrared Sensors, Devices, and Applications II
DOIs	https://doi.org/10.1117/12.930949
State	Published - 2012
Event	Infrared Sensors, Devices, and Applications II - San Diego, CA, United States Duration: Aug 14 2012 → Aug 15 2012

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8512
ISSN (Print)	0277-786X

Other

Other	Infrared Sensors, Devices, and Applications II
Country/Territory	United States
City	San Diego, CA
Period	8/14/12 → 8/15/12

Keywords

Infrared
Lifetime
Photoluminescence
Superlattice
Temperature-dependent

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.930949

Cite this

Steenbergen, E. H., Connelly, B. C., Metcalfe, G. D., Shen, H., Wraback, M., Lubyshev, D., Qiu, Y., Fastenau, J. M., Liu, A. W. K., Elhamri, S., Cellek, O. O., & Zhang, Y.-H. (2012). Temperature-dependent minority carrier lifetimes of InAs/InAs _1-xSb_x type-II superlattices. In Infrared Sensors, Devices, and Applications II Article 85120L (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8512). https://doi.org/10.1117/12.930949

Temperature-dependent minority carrier lifetimes of InAs/InAs _1-xSb_x type-II superlattices. / Steenbergen, E. H.; Connelly, B. C.; Metcalfe, G. D. et al.
Infrared Sensors, Devices, and Applications II. 2012. 85120L (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8512).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Steenbergen, EH, Connelly, BC, Metcalfe, GD, Shen, H, Wraback, M, Lubyshev, D, Qiu, Y, Fastenau, JM, Liu, AWK, Elhamri, S, Cellek, OO & Zhang, Y-H 2012, Temperature-dependent minority carrier lifetimes of InAs/InAs _1-xSb_x type-II superlattices. in Infrared Sensors, Devices, and Applications II., 85120L, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8512, Infrared Sensors, Devices, and Applications II, San Diego, CA, United States, 8/14/12. https://doi.org/10.1117/12.930949

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abstract = "Temperature-dependent minority carrier lifetimes of InAs/InAs 1-xSbx type-II superlattices are presented. The longest lifetime at 11 K is 504 ± 40 ns and at 77 K is 412 ± 25 ns. Samples with long periods and small wave function overlaps have both non-radiative and radiative recombination mechanisms apparent, with comparable contributions from both near 77 K, and radiative recombination dominating at low temperatures. Samples with short periods and large wave function overlaps have radiative recombination dominating from 10 K until ∼200 K. The improved lifetimes observed will enable long minority carrier lifetime superlattices to be designed for high quantum efficiency, low dark current infrared detectors.",

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