Temperature-dependent kinetics of photophysical hole burning in a tetracene-doped mthf glass

A. Elschner, Ranko Richert, H. Bässler

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Kinetics of photophysical hole burning in a MTHF(TC) glass follows the concept of decoupled first-order reactions with Gaussian distribution of the tunnelling parameter. The decrease of the hole-burning yield with increasing temperature signals thermally activated hole refilling in the excited state. The ratio of TLS states responsible for dephasing and hole burning, respectively, is estimated to be ≈ 107.

Original languageEnglish (US)
Pages (from-to)105-110
Number of pages6
JournalChemical Physics Letters
Volume127
Issue number2
DOIs
StatePublished - Jun 6 1986
Externally publishedYes

Fingerprint

hole burning
Glass
Kinetics
glass
kinetics
refilling
Gaussian distribution
normal density functions
Excited states
Temperature
temperature
excitation
naphthacene

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces

Cite this

Temperature-dependent kinetics of photophysical hole burning in a tetracene-doped mthf glass. / Elschner, A.; Richert, Ranko; Bässler, H.

In: Chemical Physics Letters, Vol. 127, No. 2, 06.06.1986, p. 105-110.

Research output: Contribution to journalArticle

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