Temperature-dependent electrical properties of β-Ga 2 O 3 Schottky barrier diodes on highly doped single-crystal substrates

Tsung Han Yang, Houqiang Fu, Hong Chen, Xuanqi Huang, Jossue Montes, Izak Baranowski, Kai Fu, Yuji Zhao

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Beta-phase gallium oxide (β-Ga 2 O 3 ) Schottky barrier diodes were fabricated on highly doped single-crystal substrates, where their temperature-dependent electrical properties were comprehensively investigated by forward and reverse current density - voltage and capacitance - voltage characterization. Both the Schottky barrier height and the ideality factor showed a temperature-dependence behavior, revealing the inhomogeneous nature of the Schottky barrier interface caused by the interfacial defects. With a voltage-dependent Schottky barrier incorporated into thermionic emission theory, the inhomogeneous barrier model can be further examined. Furthermore, the reverse leakage current was found to be dominated by the bulk leakage currents due to the good material and surface quality. Leakage current per distance was also obtained. These results can serve as important references for designing efficient β-Ga 2 O 3 electronic and optoelectronic devices on highly doped substrates or epitaxial layers.

Original languageEnglish (US)
Article number012801
JournalJournal of Semiconductors
Volume40
Issue number1
DOIs
StatePublished - Jan 1 2019

Fingerprint

Schottky barrier diodes
Schottky diodes
doped crystals
Leakage currents
Electric properties
electrical properties
Single crystals
leakage
single crystals
Electric potential
Substrates
Thermionic emission
electric potential
Epitaxial layers
Gallium
gallium oxides
Optoelectronic devices
Temperature
Surface properties
temperature

Keywords

  • gallium oxide
  • power electronics
  • Schottky barrier diode
  • wide bandgap material

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Temperature-dependent electrical properties of β-Ga 2 O 3 Schottky barrier diodes on highly doped single-crystal substrates . / Yang, Tsung Han; Fu, Houqiang; Chen, Hong; Huang, Xuanqi; Montes, Jossue; Baranowski, Izak; Fu, Kai; Zhao, Yuji.

In: Journal of Semiconductors, Vol. 40, No. 1, 012801, 01.01.2019.

Research output: Contribution to journalArticle

Yang, Tsung Han ; Fu, Houqiang ; Chen, Hong ; Huang, Xuanqi ; Montes, Jossue ; Baranowski, Izak ; Fu, Kai ; Zhao, Yuji. / Temperature-dependent electrical properties of β-Ga 2 O 3 Schottky barrier diodes on highly doped single-crystal substrates In: Journal of Semiconductors. 2019 ; Vol. 40, No. 1.
@article{035cfa50fc8b4cb6a31ba7c939d8d74c,
title = "Temperature-dependent electrical properties of β-Ga 2 O 3 Schottky barrier diodes on highly doped single-crystal substrates",
abstract = "Beta-phase gallium oxide (β-Ga 2 O 3 ) Schottky barrier diodes were fabricated on highly doped single-crystal substrates, where their temperature-dependent electrical properties were comprehensively investigated by forward and reverse current density - voltage and capacitance - voltage characterization. Both the Schottky barrier height and the ideality factor showed a temperature-dependence behavior, revealing the inhomogeneous nature of the Schottky barrier interface caused by the interfacial defects. With a voltage-dependent Schottky barrier incorporated into thermionic emission theory, the inhomogeneous barrier model can be further examined. Furthermore, the reverse leakage current was found to be dominated by the bulk leakage currents due to the good material and surface quality. Leakage current per distance was also obtained. These results can serve as important references for designing efficient β-Ga 2 O 3 electronic and optoelectronic devices on highly doped substrates or epitaxial layers.",
keywords = "gallium oxide, power electronics, Schottky barrier diode, wide bandgap material",
author = "Yang, {Tsung Han} and Houqiang Fu and Hong Chen and Xuanqi Huang and Jossue Montes and Izak Baranowski and Kai Fu and Yuji Zhao",
year = "2019",
month = "1",
day = "1",
doi = "10.1088/1674-4926/40/1/012801",
language = "English (US)",
volume = "40",
journal = "Journal of Semiconductors",
issn = "1674-4926",
publisher = "IOS Press",
number = "1",

}

TY - JOUR

T1 - Temperature-dependent electrical properties of β-Ga 2 O 3 Schottky barrier diodes on highly doped single-crystal substrates

AU - Yang, Tsung Han

AU - Fu, Houqiang

AU - Chen, Hong

AU - Huang, Xuanqi

AU - Montes, Jossue

AU - Baranowski, Izak

AU - Fu, Kai

AU - Zhao, Yuji

PY - 2019/1/1

Y1 - 2019/1/1

N2 - Beta-phase gallium oxide (β-Ga 2 O 3 ) Schottky barrier diodes were fabricated on highly doped single-crystal substrates, where their temperature-dependent electrical properties were comprehensively investigated by forward and reverse current density - voltage and capacitance - voltage characterization. Both the Schottky barrier height and the ideality factor showed a temperature-dependence behavior, revealing the inhomogeneous nature of the Schottky barrier interface caused by the interfacial defects. With a voltage-dependent Schottky barrier incorporated into thermionic emission theory, the inhomogeneous barrier model can be further examined. Furthermore, the reverse leakage current was found to be dominated by the bulk leakage currents due to the good material and surface quality. Leakage current per distance was also obtained. These results can serve as important references for designing efficient β-Ga 2 O 3 electronic and optoelectronic devices on highly doped substrates or epitaxial layers.

AB - Beta-phase gallium oxide (β-Ga 2 O 3 ) Schottky barrier diodes were fabricated on highly doped single-crystal substrates, where their temperature-dependent electrical properties were comprehensively investigated by forward and reverse current density - voltage and capacitance - voltage characterization. Both the Schottky barrier height and the ideality factor showed a temperature-dependence behavior, revealing the inhomogeneous nature of the Schottky barrier interface caused by the interfacial defects. With a voltage-dependent Schottky barrier incorporated into thermionic emission theory, the inhomogeneous barrier model can be further examined. Furthermore, the reverse leakage current was found to be dominated by the bulk leakage currents due to the good material and surface quality. Leakage current per distance was also obtained. These results can serve as important references for designing efficient β-Ga 2 O 3 electronic and optoelectronic devices on highly doped substrates or epitaxial layers.

KW - gallium oxide

KW - power electronics

KW - Schottky barrier diode

KW - wide bandgap material

UR - http://www.scopus.com/inward/record.url?scp=85062458944&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85062458944&partnerID=8YFLogxK

U2 - 10.1088/1674-4926/40/1/012801

DO - 10.1088/1674-4926/40/1/012801

M3 - Article

VL - 40

JO - Journal of Semiconductors

JF - Journal of Semiconductors

SN - 1674-4926

IS - 1

M1 - 012801

ER -