Temperature-dependent direct transition energy in Ge0.99Sn0.01 film grown on Si measured by photoreflectance spectroscopy

Hyun Jun Jo, Mo Geun So, Jong Su Kim, Mee Yi Ryu, Yung Kee Yeo, John Kouvetakis

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Optical properties of a p-Ge0.99Sn0.01 film grown on an n-Si substrate have been investigated as a function of temperature and excitation laser intensity using photoreflectance (PR) spectroscopy. The Ge0.99Sn0.01 film was grown by ultra-high vacuum chemical vapor deposition method. Room temperature PR spectrum shows a dominant signal assigned to a direct transition from the conduction Γ valley to valence band at around 0.73 eV. The transition to spin-orbit split-off band is also observed at around 1.0 eV. In addition, Franz-Keldysh oscillations (FKOs) due to the internal electric field are observed above the direct bandgap transition energy. The direct transition energy obtained by an analysis of FKO extremum was 0.728 eV at room temperature. The internal electric fields are reduced as the laser excitation intensity increases due to the photovoltage effect. The temperature dependence of direct transition energy was also investigated.

Original languageEnglish (US)
Pages (from-to)295-300
Number of pages6
JournalThin Solid Films
Volume591
DOIs
StatePublished - Sep 30 2015

Fingerprint

Electron transitions
Spectroscopy
Laser excitation
spectroscopy
Electric fields
Temperature
temperature
energy
Ultrahigh vacuum
Valence bands
oscillations
electric fields
photovoltages
range (extremes)
room temperature
Chemical vapor deposition
Orbits
Energy gap
Optical properties
ultrahigh vacuum

Keywords

  • Franz-Keldysh oscillations
  • Germanium antimonide
  • Photoreflectance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Temperature-dependent direct transition energy in Ge0.99Sn0.01 film grown on Si measured by photoreflectance spectroscopy. / Jo, Hyun Jun; So, Mo Geun; Kim, Jong Su; Ryu, Mee Yi; Yeo, Yung Kee; Kouvetakis, John.

In: Thin Solid Films, Vol. 591, 30.09.2015, p. 295-300.

Research output: Contribution to journalArticle

Jo, Hyun Jun ; So, Mo Geun ; Kim, Jong Su ; Ryu, Mee Yi ; Yeo, Yung Kee ; Kouvetakis, John. / Temperature-dependent direct transition energy in Ge0.99Sn0.01 film grown on Si measured by photoreflectance spectroscopy. In: Thin Solid Films. 2015 ; Vol. 591. pp. 295-300.
@article{ef7b2b70ddd148248265749cf8802130,
title = "Temperature-dependent direct transition energy in Ge0.99Sn0.01 film grown on Si measured by photoreflectance spectroscopy",
abstract = "Optical properties of a p-Ge0.99Sn0.01 film grown on an n-Si substrate have been investigated as a function of temperature and excitation laser intensity using photoreflectance (PR) spectroscopy. The Ge0.99Sn0.01 film was grown by ultra-high vacuum chemical vapor deposition method. Room temperature PR spectrum shows a dominant signal assigned to a direct transition from the conduction Γ valley to valence band at around 0.73 eV. The transition to spin-orbit split-off band is also observed at around 1.0 eV. In addition, Franz-Keldysh oscillations (FKOs) due to the internal electric field are observed above the direct bandgap transition energy. The direct transition energy obtained by an analysis of FKO extremum was 0.728 eV at room temperature. The internal electric fields are reduced as the laser excitation intensity increases due to the photovoltage effect. The temperature dependence of direct transition energy was also investigated.",
keywords = "Franz-Keldysh oscillations, Germanium antimonide, Photoreflectance",
author = "Jo, {Hyun Jun} and So, {Mo Geun} and Kim, {Jong Su} and Ryu, {Mee Yi} and Yeo, {Yung Kee} and John Kouvetakis",
year = "2015",
month = "9",
day = "30",
doi = "10.1016/j.tsf.2015.06.008",
language = "English (US)",
volume = "591",
pages = "295--300",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

TY - JOUR

T1 - Temperature-dependent direct transition energy in Ge0.99Sn0.01 film grown on Si measured by photoreflectance spectroscopy

AU - Jo, Hyun Jun

AU - So, Mo Geun

AU - Kim, Jong Su

AU - Ryu, Mee Yi

AU - Yeo, Yung Kee

AU - Kouvetakis, John

PY - 2015/9/30

Y1 - 2015/9/30

N2 - Optical properties of a p-Ge0.99Sn0.01 film grown on an n-Si substrate have been investigated as a function of temperature and excitation laser intensity using photoreflectance (PR) spectroscopy. The Ge0.99Sn0.01 film was grown by ultra-high vacuum chemical vapor deposition method. Room temperature PR spectrum shows a dominant signal assigned to a direct transition from the conduction Γ valley to valence band at around 0.73 eV. The transition to spin-orbit split-off band is also observed at around 1.0 eV. In addition, Franz-Keldysh oscillations (FKOs) due to the internal electric field are observed above the direct bandgap transition energy. The direct transition energy obtained by an analysis of FKO extremum was 0.728 eV at room temperature. The internal electric fields are reduced as the laser excitation intensity increases due to the photovoltage effect. The temperature dependence of direct transition energy was also investigated.

AB - Optical properties of a p-Ge0.99Sn0.01 film grown on an n-Si substrate have been investigated as a function of temperature and excitation laser intensity using photoreflectance (PR) spectroscopy. The Ge0.99Sn0.01 film was grown by ultra-high vacuum chemical vapor deposition method. Room temperature PR spectrum shows a dominant signal assigned to a direct transition from the conduction Γ valley to valence band at around 0.73 eV. The transition to spin-orbit split-off band is also observed at around 1.0 eV. In addition, Franz-Keldysh oscillations (FKOs) due to the internal electric field are observed above the direct bandgap transition energy. The direct transition energy obtained by an analysis of FKO extremum was 0.728 eV at room temperature. The internal electric fields are reduced as the laser excitation intensity increases due to the photovoltage effect. The temperature dependence of direct transition energy was also investigated.

KW - Franz-Keldysh oscillations

KW - Germanium antimonide

KW - Photoreflectance

UR - http://www.scopus.com/inward/record.url?scp=84942821844&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84942821844&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2015.06.008

DO - 10.1016/j.tsf.2015.06.008

M3 - Article

AN - SCOPUS:84942821844

VL - 591

SP - 295

EP - 300

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -