Temperature dependent bandgap energy and conduction band offset of GaAsSb on GaAs

J. H. Wang, Shane Johnson, S. A. Chaparro, J. A. Gupta, Yu G. Sadofyev, D. Ding, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Bandgap energy and conduction band offset of pseudomorphic GaAsSb on GaAs are studied by temperature dependent photoluminescence and theoretical model fitting. GaAs0.643Sb0.357/GaAs quantum well is determined to have a weak type-I (almost flat) conduction band alignment over the entire temperature range, with a conduction band offset of 4.5 ± 11.9 meV at 0 K and 11.5 ± 12.6 meV at room temperature.

Original languageEnglish (US)
Title of host publicationAIP Conference Proceedings
Pages399-400
Number of pages2
Volume772
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

Fingerprint

energy bands
conduction bands
temperature
alignment
quantum wells
photoluminescence
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Wang, J. H., Johnson, S., Chaparro, S. A., Gupta, J. A., Sadofyev, Y. G., Ding, D., & Zhang, Y-H. (2005). Temperature dependent bandgap energy and conduction band offset of GaAsSb on GaAs. In AIP Conference Proceedings (Vol. 772, pp. 399-400) https://doi.org/10.1063/1.1994154

Temperature dependent bandgap energy and conduction band offset of GaAsSb on GaAs. / Wang, J. H.; Johnson, Shane; Chaparro, S. A.; Gupta, J. A.; Sadofyev, Yu G.; Ding, D.; Zhang, Yong-Hang.

AIP Conference Proceedings. Vol. 772 2005. p. 399-400.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wang, JH, Johnson, S, Chaparro, SA, Gupta, JA, Sadofyev, YG, Ding, D & Zhang, Y-H 2005, Temperature dependent bandgap energy and conduction band offset of GaAsSb on GaAs. in AIP Conference Proceedings. vol. 772, pp. 399-400, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 7/26/04. https://doi.org/10.1063/1.1994154
Wang JH, Johnson S, Chaparro SA, Gupta JA, Sadofyev YG, Ding D et al. Temperature dependent bandgap energy and conduction band offset of GaAsSb on GaAs. In AIP Conference Proceedings. Vol. 772. 2005. p. 399-400 https://doi.org/10.1063/1.1994154
Wang, J. H. ; Johnson, Shane ; Chaparro, S. A. ; Gupta, J. A. ; Sadofyev, Yu G. ; Ding, D. ; Zhang, Yong-Hang. / Temperature dependent bandgap energy and conduction band offset of GaAsSb on GaAs. AIP Conference Proceedings. Vol. 772 2005. pp. 399-400
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