Temperature dependent bandgap energy and conduction band offset of GaAsSb on GaAs

J. H. Wang; Shane Johnson; S. A. Chaparro; J. A. Gupta; Yu G. Sadofyev; D. Ding; Yong-Hang Zhang

doi:10.1063/1.1994154

Temperature dependent bandgap energy and conduction band offset of GaAsSb on GaAs

J. H. Wang, Shane Johnson, S. A. Chaparro, J. A. Gupta, Yu G. Sadofyev, D. Ding, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Bandgap energy and conduction band offset of pseudomorphic GaAsSb on GaAs are studied by temperature dependent photoluminescence and theoretical model fitting. GaAs_0.643Sb_0.357/GaAs quantum well is determined to have a weak type-I (almost flat) conduction band alignment over the entire temperature range, with a conduction band offset of 4.5 ± 11.9 meV at 0 K and 11.5 ± 12.6 meV at room temperature.

Original language	English (US)
Title of host publication	PHYSICS OF SEMICONDUCTORS
Subtitle of host publication	27th International Conference on the Physics of Semiconductors, ICPS-27
Pages	399-400
Number of pages	2
DOIs	https://doi.org/10.1063/1.1994154
State	Published - Jun 30 2005
Event	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: Jul 26 2004 → Jul 30 2004

Publication series

Name	AIP Conference Proceedings
Volume	772
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/Territory	United States
City	Flagstaff, AZ
Period	7/26/04 → 7/30/04

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.1994154

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Wang, J. H., Johnson, S., Chaparro, S. A., Gupta, J. A., Sadofyev, Y. G., Ding, D., & Zhang, Y.-H. (2005). Temperature dependent bandgap energy and conduction band offset of GaAsSb on GaAs. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 399-400). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994154

Temperature dependent bandgap energy and conduction band offset of GaAsSb on GaAs. / Wang, J. H.; Johnson, Shane; Chaparro, S. A. et al.
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 399-400 (AIP Conference Proceedings; Vol. 772).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wang, JH, Johnson, S, Chaparro, SA, Gupta, JA, Sadofyev, YG, Ding, D & Zhang, Y-H 2005, Temperature dependent bandgap energy and conduction band offset of GaAsSb on GaAs. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 399-400, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 7/26/04. https://doi.org/10.1063/1.1994154

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AU - Sadofyev, Yu G.

AU - Ding, D.

AU - Zhang, Yong-Hang

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N2 - Bandgap energy and conduction band offset of pseudomorphic GaAsSb on GaAs are studied by temperature dependent photoluminescence and theoretical model fitting. GaAs0.643Sb0.357/GaAs quantum well is determined to have a weak type-I (almost flat) conduction band alignment over the entire temperature range, with a conduction band offset of 4.5 ± 11.9 meV at 0 K and 11.5 ± 12.6 meV at room temperature.

AB - Bandgap energy and conduction band offset of pseudomorphic GaAsSb on GaAs are studied by temperature dependent photoluminescence and theoretical model fitting. GaAs0.643Sb0.357/GaAs quantum well is determined to have a weak type-I (almost flat) conduction band alignment over the entire temperature range, with a conduction band offset of 4.5 ± 11.9 meV at 0 K and 11.5 ± 12.6 meV at room temperature.

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Temperature dependent bandgap energy and conduction band offset of GaAsSb on GaAs

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