Temperature dependence of the Urbach edge in GaAs

Shane Johnson, T. Tiedje

Research output: Contribution to journalArticle

121 Citations (Scopus)

Abstract

The temperature dependence of the optical-absorption edge (Urbach edge) of GaAs is measured in semi-insulating and n-type GaAs (n=2×1018 cm-3) over the temperature range from room temperature to 700 °C. Both the optical absorption and the temperature are measured using a diffuse reflectance technique. The characteristic energy of the exponential absorption edge is found to increase linearly with temperature, from 7.5 meV at room temperature to 12.4 meV at 700 °C, for semi-insulating GaAs. The temperature dependent part of the width of the Urbach edge for semi-insulating GaAs is six times smaller than predicted by the standard theory where the edge width is proportional to the phonon population.

Original languageEnglish (US)
Pages (from-to)5609-5613
Number of pages5
JournalJournal of Applied Physics
Volume78
Issue number9
DOIs
StatePublished - Dec 1 1995
Externally publishedYes

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temperature dependence
optical absorption
temperature
room temperature
reflectance
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Temperature dependence of the Urbach edge in GaAs. / Johnson, Shane; Tiedje, T.

In: Journal of Applied Physics, Vol. 78, No. 9, 01.12.1995, p. 5609-5613.

Research output: Contribution to journalArticle

Johnson, Shane ; Tiedje, T. / Temperature dependence of the Urbach edge in GaAs. In: Journal of Applied Physics. 1995 ; Vol. 78, No. 9. pp. 5609-5613.
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