Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si

Engineering & Materials Science

• Epilayers 71%
• Red Shift 69%
• Thermal expansion 42%
• Spectroscopic ellipsometry 38%
• Substrates 29%
• Band structure 29%
• Temperature 25%
• Tensile stress 21%
• X ray diffraction 20%
• Elasticity 19%

Chemical Compounds

• Interband Transition 100%
• Thermal Expansion Coefficient 72%
• Deformation Potential 56%
• Dielectric Function 47%
• Ellipsometry 34%
• Electronic Band Structure 31%
• X-Ray Diffraction 15%

Physics & Astronomy

• critical point 56%
• temperature dependence 40%
• thermal expansion 27%
• potential theory 20%
• coefficients 17%
• tensile stress 16%
• ellipsometry 15%
• optical spectrum 14%
• elastic properties 11%
• continuums 11%
• temperature 9%
• symmetry 9%
• diffraction 8%
• x rays 7%