Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition

Xiao Hang Li, Yong O. Wei, Shuo Wang, Hongen Xie, Tsung Ting Kao, Md Mahbub Satter, Shyh Chiang Shen, P. Douglas Yoder, Theeradetch Detchprohm, Russell D. Dupuis, Alec M. Fischer, Fernando Ponce

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

We studied temperature dependence of crystalline quality of AlN layers at 1050-1250°C with a fine increment step of around 18°C. The AlN layers were grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD) and characterized by X-ray diffraction (XRD) ω-scans and atomic force microscopy (AFM). At 1050-1068°C, the templates exhibited poor quality with surface pits and higher XRD (002) and (102) full-width at half-maximum (FWHM) because of insufficient Al atom mobility. At 1086°C, the surface became smooth suggesting sufficient Al atom mobility. Above 1086 C, the (102) FWHM and thus edge dislocation density increased with temperatures which may be attributed to the shorter growth mode transition from three-dimension (3D) to two-dimension (2D). Above 1212 C, surface macro-steps were formed due to the longer diffusion length of Al atoms than the expected step terrace width. The edge dislocation density increased rapidly above 1212 C, indicating this temperature may be a threshold above which the impact of the transition from 3D to 2D is more significant. The (002) FWHM and thus screw dislocation density were insensitive to the temperature change. This study suggests that high-quality AlN/sapphire templates may be potentially achieved at temperatures as low as 1086°C which is accessible by most of the III-nitride MOCVD systems.

Original languageEnglish (US)
Pages (from-to)76-80
Number of pages5
JournalJournal of Crystal Growth
Volume414
DOIs
StatePublished - Mar 15 2015

Fingerprint

Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
metalorganic chemical vapor deposition
sapphire
Crystalline materials
temperature dependence
Full width at half maximum
edge dislocations
Substrates
Edge dislocations
templates
Atoms
atoms
Temperature
temperature
screw dislocations
X ray diffraction
diffusion length
Screw dislocations

Keywords

  • A1. Characterization
  • A3. Metalorganic chemical vapor deposition
  • B1. Nitrides
  • B2. Semiconducting aluminum compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition. / Li, Xiao Hang; Wei, Yong O.; Wang, Shuo; Xie, Hongen; Kao, Tsung Ting; Satter, Md Mahbub; Shen, Shyh Chiang; Yoder, P. Douglas; Detchprohm, Theeradetch; Dupuis, Russell D.; Fischer, Alec M.; Ponce, Fernando.

In: Journal of Crystal Growth, Vol. 414, 15.03.2015, p. 76-80.

Research output: Contribution to journalArticle

Li, XH, Wei, YO, Wang, S, Xie, H, Kao, TT, Satter, MM, Shen, SC, Yoder, PD, Detchprohm, T, Dupuis, RD, Fischer, AM & Ponce, F 2015, 'Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition', Journal of Crystal Growth, vol. 414, pp. 76-80. https://doi.org/10.1016/j.jcrysgro.2014.10.007
Li, Xiao Hang ; Wei, Yong O. ; Wang, Shuo ; Xie, Hongen ; Kao, Tsung Ting ; Satter, Md Mahbub ; Shen, Shyh Chiang ; Yoder, P. Douglas ; Detchprohm, Theeradetch ; Dupuis, Russell D. ; Fischer, Alec M. ; Ponce, Fernando. / Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition. In: Journal of Crystal Growth. 2015 ; Vol. 414. pp. 76-80.
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abstract = "We studied temperature dependence of crystalline quality of AlN layers at 1050-1250°C with a fine increment step of around 18°C. The AlN layers were grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD) and characterized by X-ray diffraction (XRD) ω-scans and atomic force microscopy (AFM). At 1050-1068°C, the templates exhibited poor quality with surface pits and higher XRD (002) and (102) full-width at half-maximum (FWHM) because of insufficient Al atom mobility. At 1086°C, the surface became smooth suggesting sufficient Al atom mobility. Above 1086 C, the (102) FWHM and thus edge dislocation density increased with temperatures which may be attributed to the shorter growth mode transition from three-dimension (3D) to two-dimension (2D). Above 1212 C, surface macro-steps were formed due to the longer diffusion length of Al atoms than the expected step terrace width. The edge dislocation density increased rapidly above 1212 C, indicating this temperature may be a threshold above which the impact of the transition from 3D to 2D is more significant. The (002) FWHM and thus screw dislocation density were insensitive to the temperature change. This study suggests that high-quality AlN/sapphire templates may be potentially achieved at temperatures as low as 1086°C which is accessible by most of the III-nitride MOCVD systems.",
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AU - Li, Xiao Hang

AU - Wei, Yong O.

AU - Wang, Shuo

AU - Xie, Hongen

AU - Kao, Tsung Ting

AU - Satter, Md Mahbub

AU - Shen, Shyh Chiang

AU - Yoder, P. Douglas

AU - Detchprohm, Theeradetch

AU - Dupuis, Russell D.

AU - Fischer, Alec M.

AU - Ponce, Fernando

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N2 - We studied temperature dependence of crystalline quality of AlN layers at 1050-1250°C with a fine increment step of around 18°C. The AlN layers were grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD) and characterized by X-ray diffraction (XRD) ω-scans and atomic force microscopy (AFM). At 1050-1068°C, the templates exhibited poor quality with surface pits and higher XRD (002) and (102) full-width at half-maximum (FWHM) because of insufficient Al atom mobility. At 1086°C, the surface became smooth suggesting sufficient Al atom mobility. Above 1086 C, the (102) FWHM and thus edge dislocation density increased with temperatures which may be attributed to the shorter growth mode transition from three-dimension (3D) to two-dimension (2D). Above 1212 C, surface macro-steps were formed due to the longer diffusion length of Al atoms than the expected step terrace width. The edge dislocation density increased rapidly above 1212 C, indicating this temperature may be a threshold above which the impact of the transition from 3D to 2D is more significant. The (002) FWHM and thus screw dislocation density were insensitive to the temperature change. This study suggests that high-quality AlN/sapphire templates may be potentially achieved at temperatures as low as 1086°C which is accessible by most of the III-nitride MOCVD systems.

AB - We studied temperature dependence of crystalline quality of AlN layers at 1050-1250°C with a fine increment step of around 18°C. The AlN layers were grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD) and characterized by X-ray diffraction (XRD) ω-scans and atomic force microscopy (AFM). At 1050-1068°C, the templates exhibited poor quality with surface pits and higher XRD (002) and (102) full-width at half-maximum (FWHM) because of insufficient Al atom mobility. At 1086°C, the surface became smooth suggesting sufficient Al atom mobility. Above 1086 C, the (102) FWHM and thus edge dislocation density increased with temperatures which may be attributed to the shorter growth mode transition from three-dimension (3D) to two-dimension (2D). Above 1212 C, surface macro-steps were formed due to the longer diffusion length of Al atoms than the expected step terrace width. The edge dislocation density increased rapidly above 1212 C, indicating this temperature may be a threshold above which the impact of the transition from 3D to 2D is more significant. The (002) FWHM and thus screw dislocation density were insensitive to the temperature change. This study suggests that high-quality AlN/sapphire templates may be potentially achieved at temperatures as low as 1086°C which is accessible by most of the III-nitride MOCVD systems.

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