Temperature dependence of surface plasmon and breakdown for thin and thick silicon-dioxide

Jong Hyun Kim; Julian J. Sanchez; Thomas A. DeMassa; Mohammed T. Quddus; Robert O. Grondin; Chuan H. Liu

doi:10.1016/S0038-1101(98)00196-8

Temperature dependence of surface plasmon and breakdown for thin and thick silicon-dioxide

Jong Hyun Kim, Julian J. Sanchez, Thomas A. DeMassa, Mohammed T. Quddus, Robert O. Grondin, Chuan H. Liu

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The anode hole injection oxide breakdown model based upon surface plasmons is presented. The increase in conductance at bias voltages near the surface plasmon energy is observed on metal-oxide-semiconductor capacitors. The surface plasmon excitation threshold energy decreases with increasing temperature which causes the positive charge generation to increase and the charge to breakdown to decrease. Therefore, the anode hole injection model based upon surface plasmons is a reasonable thin oxide breakdown model that confirms experimental observations.

Original language	English (US)
Pages (from-to)	57-63
Number of pages	7
Journal	Solid-State Electronics
Volume	43
Issue number	1
DOIs	https://doi.org/10.1016/S0038-1101(98)00196-8
State	Published - Jan 1 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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abstract = "The anode hole injection oxide breakdown model based upon surface plasmons is presented. The increase in conductance at bias voltages near the surface plasmon energy is observed on metal-oxide-semiconductor capacitors. The surface plasmon excitation threshold energy decreases with increasing temperature which causes the positive charge generation to increase and the charge to breakdown to decrease. Therefore, the anode hole injection model based upon surface plasmons is a reasonable thin oxide breakdown model that confirms experimental observations.",

author = "Kim, {Jong Hyun} and Sanchez, {Julian J.} and DeMassa, {Thomas A.} and Quddus, {Mohammed T.} and Grondin, {Robert O.} and Liu, {Chuan H.}",

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T1 - Temperature dependence of surface plasmon and breakdown for thin and thick silicon-dioxide

AU - Kim, Jong Hyun

AU - Sanchez, Julian J.

AU - DeMassa, Thomas A.

AU - Quddus, Mohammed T.

AU - Grondin, Robert O.

AU - Liu, Chuan H.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - The anode hole injection oxide breakdown model based upon surface plasmons is presented. The increase in conductance at bias voltages near the surface plasmon energy is observed on metal-oxide-semiconductor capacitors. The surface plasmon excitation threshold energy decreases with increasing temperature which causes the positive charge generation to increase and the charge to breakdown to decrease. Therefore, the anode hole injection model based upon surface plasmons is a reasonable thin oxide breakdown model that confirms experimental observations.

AB - The anode hole injection oxide breakdown model based upon surface plasmons is presented. The increase in conductance at bias voltages near the surface plasmon energy is observed on metal-oxide-semiconductor capacitors. The surface plasmon excitation threshold energy decreases with increasing temperature which causes the positive charge generation to increase and the charge to breakdown to decrease. Therefore, the anode hole injection model based upon surface plasmons is a reasonable thin oxide breakdown model that confirms experimental observations.

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ER -

Temperature dependence of surface plasmon and breakdown for thin and thick silicon-dioxide

Abstract

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