Temperature dependence of surface plasmon and breakdown for thin and thick silicon-dioxide

Jong Hyun Kim, Julian J. Sanchez, Thomas A. DeMassa, Mohammed T. Quddus, Robert O. Grondin, Chuan H. Liu

    Research output: Contribution to journalArticle

    2 Scopus citations

    Abstract

    The anode hole injection oxide breakdown model based upon surface plasmons is presented. The increase in conductance at bias voltages near the surface plasmon energy is observed on metal-oxide-semiconductor capacitors. The surface plasmon excitation threshold energy decreases with increasing temperature which causes the positive charge generation to increase and the charge to breakdown to decrease. Therefore, the anode hole injection model based upon surface plasmons is a reasonable thin oxide breakdown model that confirms experimental observations.

    Original languageEnglish (US)
    Pages (from-to)57-63
    Number of pages7
    JournalSolid-State Electronics
    Volume43
    Issue number1
    DOIs
    StatePublished - Jan 1 1999

      Fingerprint

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

    Cite this

    Kim, J. H., Sanchez, J. J., DeMassa, T. A., Quddus, M. T., Grondin, R. O., & Liu, C. H. (1999). Temperature dependence of surface plasmon and breakdown for thin and thick silicon-dioxide. Solid-State Electronics, 43(1), 57-63. https://doi.org/10.1016/S0038-1101(98)00196-8