Temperature dependence of intersubband transitions in InAs/AiSb quantum wells

D. C. Larrabee, G. A. Khodaparast, J. Kono, K. Ueda, Y. Nakajima, M. Nakai, S. Sasa, M. Inoue, K. I. Kolokolov, J. Li, C. Z. Ning

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37 Scopus citations


The temperature dependence study of the intersubband transitions in indium arsenide (InAs)/AlSb quantum wells was presented. Temperature was incorporated through nonparabolicity and band filling. The amount of redshift increased with decreasing well width. It was found that the absorption showed a strong redshift with increasing temperature.

Original languageEnglish (US)
Pages (from-to)3936-3938
Number of pages3
JournalApplied Physics Letters
Issue number19
StatePublished - Nov 10 2003
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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