Temperature dependence of intersubband transitions in InAs/AiSb quantum wells

D. C. Larrabee, G. A. Khodaparast, J. Kono, K. Ueda, Y. Nakajima, M. Nakai, S. Sasa, M. Inoue, K. I. Kolokolov, J. Li, C. Z. Ning

Research output: Contribution to journalArticle

34 Scopus citations

Abstract

The temperature dependence study of the intersubband transitions in indium arsenide (InAs)/AlSb quantum wells was presented. Temperature was incorporated through nonparabolicity and band filling. The amount of redshift increased with decreasing well width. It was found that the absorption showed a strong redshift with increasing temperature.

Original languageEnglish (US)
Pages (from-to)3936-3938
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number19
DOIs
StatePublished - Nov 10 2003
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Temperature dependence of intersubband transitions in InAs/AiSb quantum wells'. Together they form a unique fingerprint.

Cite this