Temperature dependence of intersubband transitions in InAs/AiSb quantum wells

D. C. Larrabee, G. A. Khodaparast, J. Kono, K. Ueda, Y. Nakajima, M. Nakai, S. Sasa, M. Inoue, K. I. Kolokolov, J. Li, Cun-Zheng Ning

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

The temperature dependence study of the intersubband transitions in indium arsenide (InAs)/AlSb quantum wells was presented. Temperature was incorporated through nonparabolicity and band filling. The amount of redshift increased with decreasing well width. It was found that the absorption showed a strong redshift with increasing temperature.

Original languageEnglish (US)
Pages (from-to)3936-3938
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number19
DOIs
StatePublished - Nov 10 2003
Externally publishedYes

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indium
quantum wells
temperature dependence
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Larrabee, D. C., Khodaparast, G. A., Kono, J., Ueda, K., Nakajima, Y., Nakai, M., ... Ning, C-Z. (2003). Temperature dependence of intersubband transitions in InAs/AiSb quantum wells. Applied Physics Letters, 83(19), 3936-3938. https://doi.org/10.1063/1.1626264

Temperature dependence of intersubband transitions in InAs/AiSb quantum wells. / Larrabee, D. C.; Khodaparast, G. A.; Kono, J.; Ueda, K.; Nakajima, Y.; Nakai, M.; Sasa, S.; Inoue, M.; Kolokolov, K. I.; Li, J.; Ning, Cun-Zheng.

In: Applied Physics Letters, Vol. 83, No. 19, 10.11.2003, p. 3936-3938.

Research output: Contribution to journalArticle

Larrabee, DC, Khodaparast, GA, Kono, J, Ueda, K, Nakajima, Y, Nakai, M, Sasa, S, Inoue, M, Kolokolov, KI, Li, J & Ning, C-Z 2003, 'Temperature dependence of intersubband transitions in InAs/AiSb quantum wells', Applied Physics Letters, vol. 83, no. 19, pp. 3936-3938. https://doi.org/10.1063/1.1626264
Larrabee DC, Khodaparast GA, Kono J, Ueda K, Nakajima Y, Nakai M et al. Temperature dependence of intersubband transitions in InAs/AiSb quantum wells. Applied Physics Letters. 2003 Nov 10;83(19):3936-3938. https://doi.org/10.1063/1.1626264
Larrabee, D. C. ; Khodaparast, G. A. ; Kono, J. ; Ueda, K. ; Nakajima, Y. ; Nakai, M. ; Sasa, S. ; Inoue, M. ; Kolokolov, K. I. ; Li, J. ; Ning, Cun-Zheng. / Temperature dependence of intersubband transitions in InAs/AiSb quantum wells. In: Applied Physics Letters. 2003 ; Vol. 83, No. 19. pp. 3936-3938.
@article{f1597c19f54e46588ca793dbdc1a0fae,
title = "Temperature dependence of intersubband transitions in InAs/AiSb quantum wells",
abstract = "The temperature dependence study of the intersubband transitions in indium arsenide (InAs)/AlSb quantum wells was presented. Temperature was incorporated through nonparabolicity and band filling. The amount of redshift increased with decreasing well width. It was found that the absorption showed a strong redshift with increasing temperature.",
author = "Larrabee, {D. C.} and Khodaparast, {G. A.} and J. Kono and K. Ueda and Y. Nakajima and M. Nakai and S. Sasa and M. Inoue and Kolokolov, {K. I.} and J. Li and Cun-Zheng Ning",
year = "2003",
month = "11",
day = "10",
doi = "10.1063/1.1626264",
language = "English (US)",
volume = "83",
pages = "3936--3938",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "19",

}

TY - JOUR

T1 - Temperature dependence of intersubband transitions in InAs/AiSb quantum wells

AU - Larrabee, D. C.

AU - Khodaparast, G. A.

AU - Kono, J.

AU - Ueda, K.

AU - Nakajima, Y.

AU - Nakai, M.

AU - Sasa, S.

AU - Inoue, M.

AU - Kolokolov, K. I.

AU - Li, J.

AU - Ning, Cun-Zheng

PY - 2003/11/10

Y1 - 2003/11/10

N2 - The temperature dependence study of the intersubband transitions in indium arsenide (InAs)/AlSb quantum wells was presented. Temperature was incorporated through nonparabolicity and band filling. The amount of redshift increased with decreasing well width. It was found that the absorption showed a strong redshift with increasing temperature.

AB - The temperature dependence study of the intersubband transitions in indium arsenide (InAs)/AlSb quantum wells was presented. Temperature was incorporated through nonparabolicity and band filling. The amount of redshift increased with decreasing well width. It was found that the absorption showed a strong redshift with increasing temperature.

UR - http://www.scopus.com/inward/record.url?scp=0344945479&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0344945479&partnerID=8YFLogxK

U2 - 10.1063/1.1626264

DO - 10.1063/1.1626264

M3 - Article

AN - SCOPUS:0344945479

VL - 83

SP - 3936

EP - 3938

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

ER -