Abstract
The temperature dependence study of the intersubband transitions in indium arsenide (InAs)/AlSb quantum wells was presented. Temperature was incorporated through nonparabolicity and band filling. The amount of redshift increased with decreasing well width. It was found that the absorption showed a strong redshift with increasing temperature.
Original language | English (US) |
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Pages (from-to) | 3936-3938 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 19 |
DOIs | |
State | Published - Nov 10 2003 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)