TY - JOUR
T1 - Temperature dependence of GaSb and AlGaSb solar cells
AU - Vadiee, Ehsan
AU - Fang, Yi
AU - Zhang, Chaomin
AU - Fischer, Alec M.
AU - Williams, Joshua J.
AU - Renteria, Emma J.
AU - Balakrishnan, Ganesh
AU - Honsberg, Christiana
N1 - Funding Information:
This work was primarily supported by the Engineering Research Center (ERC) Program of the National Science Foundation (NSF) and the Office of Energy Efficiency and Renewable Energy of the Department of Energy (DOE) under NSF Cooperative Agreement No. EEC-1041895. The authors sincerely acknowledge the use of facilities within the LeRoy Eyring Center for Solid State Science and NanoFab at Arizona State University.
Funding Information:
This work was primarily supported by the Engineering Research Center (ERC) Program of the National Science Foundation (NSF) and the Office of Energy Efficiency and Renewable Energy of the Department of Energy (DOE) under NSF Cooperative Agreement No. EEC - 1041895 . The authors sincerely acknowledge the use of facilities within the LeRoy Eyring Center for Solid State Science and NanoFab at Arizona State University.
Publisher Copyright:
© 2018 Korean Physical Society
PY - 2018/6
Y1 - 2018/6
N2 - Sb-based alloys offer great potential for photovoltaic and thermophotovoltaic applications. In this paper, we study the performance of AlxGa1-xSb (x = 0, 0.15, and 0.50) single-junction solar cells over a temperature range of 25–250 °C. The dark current-voltage, one-sun current-voltage, and external quantum efficiency measurements were acquired at different temperatures. Correlations between experimental and numerical results are made to draw conclusions about the thermal behavior of the cells. It is shown that, while the bandgaps decrease linearly with temperature leading to the reduction of open-circuit voltages, the short-circuit current densities decrease with non-linear trends. The temperature-dependent dark current densities were extracted by fitting the dark current-voltage curves to single- and double-diode models to give an insight into the effect of intrinsic carrier concentration (ni) on the cell performance. We find that the ni has a significant impact on temperature-dependent cell performance. These findings could lay a groundwork for the future Sb-based photovoltaic systems that operate at high temperatures.
AB - Sb-based alloys offer great potential for photovoltaic and thermophotovoltaic applications. In this paper, we study the performance of AlxGa1-xSb (x = 0, 0.15, and 0.50) single-junction solar cells over a temperature range of 25–250 °C. The dark current-voltage, one-sun current-voltage, and external quantum efficiency measurements were acquired at different temperatures. Correlations between experimental and numerical results are made to draw conclusions about the thermal behavior of the cells. It is shown that, while the bandgaps decrease linearly with temperature leading to the reduction of open-circuit voltages, the short-circuit current densities decrease with non-linear trends. The temperature-dependent dark current densities were extracted by fitting the dark current-voltage curves to single- and double-diode models to give an insight into the effect of intrinsic carrier concentration (ni) on the cell performance. We find that the ni has a significant impact on temperature-dependent cell performance. These findings could lay a groundwork for the future Sb-based photovoltaic systems that operate at high temperatures.
KW - Gallium antimonide
KW - Photovoltaic-thermal system (PV-T)
KW - Single-junction solar cell
KW - Temperature dependence
KW - Thermophotovoltaic system (TPV)
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U2 - 10.1016/j.cap.2018.03.007
DO - 10.1016/j.cap.2018.03.007
M3 - Article
AN - SCOPUS:85043981315
SN - 1567-1739
VL - 18
SP - 752
EP - 761
JO - Current Applied Physics
JF - Current Applied Physics
IS - 6
ER -