Abstract
We report on the temperature-dependent contact resistivity and high-temperature stability of the annealed Ni/Au ohmic contacts to p-type GaN in air. As the measure temperature increases from 25°C to 390°C, both the specific contact resistivity (ρc) and sheet resistance (Rsh) decrease by factors ∼10, contributing to the 10-fold increase in current at 390°C compared with that at 25°C. It was also observed that the ρc was further reduced by 36%, i.e., from 2.2 × 10−3 Ω cm2 to 1.4 × 10−3 Ω cm2, during the 48-h high-temperature stability test at 450°C in air, showing excellent stability of the contacts. An increase in ρc was observed after the contacts were subjected to 500°C in air. Higher temperature stress led to a significant increase in ρc. The contacts show rectifying I–V characteristics after being subjected to 700°C for 1 h. The degradation mechanics were analyzed with the assistance of transmission electron microscopy and energy dispersive x-ray spectroscopy.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1-5 |
| Number of pages | 5 |
| Journal | Journal of Electronic Materials |
| DOIs | |
| State | Accepted/In press - Dec 29 2015 |
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Keywords
- high-temperature electronics
- Ni/Au ohmic contacts
- p-type GaN
- specific contact resistivity
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
Cite this
Temperature Dependence and High-Temperature Stability of the Annealed Ni/Au Ohmic Contact to p-Type GaN in Air. / Zhao, Shirong; McFavilen, Heather; Wang, Shuo; Ponce, Fernando; Arena, Chantal; Goodnick, Stephen; Chowdhury, Srabanti.
In: Journal of Electronic Materials, 29.12.2015, p. 1-5.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Temperature Dependence and High-Temperature Stability of the Annealed Ni/Au Ohmic Contact to p-Type GaN in Air
AU - Zhao, Shirong
AU - McFavilen, Heather
AU - Wang, Shuo
AU - Ponce, Fernando
AU - Arena, Chantal
AU - Goodnick, Stephen
AU - Chowdhury, Srabanti
PY - 2015/12/29
Y1 - 2015/12/29
N2 - We report on the temperature-dependent contact resistivity and high-temperature stability of the annealed Ni/Au ohmic contacts to p-type GaN in air. As the measure temperature increases from 25°C to 390°C, both the specific contact resistivity (ρc) and sheet resistance (Rsh) decrease by factors ∼10, contributing to the 10-fold increase in current at 390°C compared with that at 25°C. It was also observed that the ρc was further reduced by 36%, i.e., from 2.2 × 10−3 Ω cm2 to 1.4 × 10−3 Ω cm2, during the 48-h high-temperature stability test at 450°C in air, showing excellent stability of the contacts. An increase in ρc was observed after the contacts were subjected to 500°C in air. Higher temperature stress led to a significant increase in ρc. The contacts show rectifying I–V characteristics after being subjected to 700°C for 1 h. The degradation mechanics were analyzed with the assistance of transmission electron microscopy and energy dispersive x-ray spectroscopy.
AB - We report on the temperature-dependent contact resistivity and high-temperature stability of the annealed Ni/Au ohmic contacts to p-type GaN in air. As the measure temperature increases from 25°C to 390°C, both the specific contact resistivity (ρc) and sheet resistance (Rsh) decrease by factors ∼10, contributing to the 10-fold increase in current at 390°C compared with that at 25°C. It was also observed that the ρc was further reduced by 36%, i.e., from 2.2 × 10−3 Ω cm2 to 1.4 × 10−3 Ω cm2, during the 48-h high-temperature stability test at 450°C in air, showing excellent stability of the contacts. An increase in ρc was observed after the contacts were subjected to 500°C in air. Higher temperature stress led to a significant increase in ρc. The contacts show rectifying I–V characteristics after being subjected to 700°C for 1 h. The degradation mechanics were analyzed with the assistance of transmission electron microscopy and energy dispersive x-ray spectroscopy.
KW - high-temperature electronics
KW - Ni/Au ohmic contacts
KW - p-type GaN
KW - specific contact resistivity
UR - http://www.scopus.com/inward/record.url?scp=84952028036&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84952028036&partnerID=8YFLogxK
U2 - 10.1007/s11664-015-4278-3
DO - 10.1007/s11664-015-4278-3
M3 - Article
SP - 1
EP - 5
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
ER -