TY - JOUR
T1 - Temperature Dependence and High-Temperature Stability of the Annealed Ni/Au Ohmic Contact to p-Type GaN in Air
AU - Zhao, Shirong
AU - McFavilen, Heather
AU - Wang, Shuo
AU - Ponce, Fernando
AU - Arena, Chantal
AU - Goodnick, Stephen
AU - Chowdhury, Srabanti
N1 - Funding Information:
The work presented herein was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under award number DE-AR0000470.
Publisher Copyright:
© 2015, The Minerals, Metals & Materials Society.
PY - 2016/4/1
Y1 - 2016/4/1
N2 - We report on the temperature-dependent contact resistivity and high-temperature stability of the annealed Ni/Au ohmic contacts to p-type GaN in air. As the measure temperature increases from 25°C to 390°C, both the specific contact resistivity (ρc) and sheet resistance (Rsh) decrease by factors ∼10, contributing to the 10-fold increase in current at 390°C compared with that at 25°C. It was also observed that the ρc was further reduced by 36%, i.e., from 2.2 × 10−3 Ω cm2 to 1.4 × 10−3 Ω cm2, during the 48-h high-temperature stability test at 450°C in air, showing excellent stability of the contacts. An increase in ρc was observed after the contacts were subjected to 500°C in air. Higher temperature stress led to a significant increase in ρc. The contacts show rectifying I–V characteristics after being subjected to 700°C for 1 h. The degradation mechanics were analyzed with the assistance of transmission electron microscopy and energy dispersive x-ray spectroscopy.
AB - We report on the temperature-dependent contact resistivity and high-temperature stability of the annealed Ni/Au ohmic contacts to p-type GaN in air. As the measure temperature increases from 25°C to 390°C, both the specific contact resistivity (ρc) and sheet resistance (Rsh) decrease by factors ∼10, contributing to the 10-fold increase in current at 390°C compared with that at 25°C. It was also observed that the ρc was further reduced by 36%, i.e., from 2.2 × 10−3 Ω cm2 to 1.4 × 10−3 Ω cm2, during the 48-h high-temperature stability test at 450°C in air, showing excellent stability of the contacts. An increase in ρc was observed after the contacts were subjected to 500°C in air. Higher temperature stress led to a significant increase in ρc. The contacts show rectifying I–V characteristics after being subjected to 700°C for 1 h. The degradation mechanics were analyzed with the assistance of transmission electron microscopy and energy dispersive x-ray spectroscopy.
KW - Ni/Au ohmic contacts
KW - high-temperature electronics
KW - p-type GaN
KW - specific contact resistivity
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U2 - 10.1007/s11664-015-4278-3
DO - 10.1007/s11664-015-4278-3
M3 - Article
AN - SCOPUS:84961134395
SN - 0361-5235
VL - 45
SP - 2087
EP - 2091
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 4
ER -