Temperature-compensated film bulk acoustic resonator above 2 GHz

Wei Pang, Hongyu Yu, Hao Zhang, Eun Sok Kim

Research output: Contribution to journalArticle

24 Scopus citations

Abstract

Two different types of temperature-compensated film bulk acoustic resonators (FBARs) are designed, fabricated, and tested. One is formed by integrating FBAR with a surface-micro-machined air-gap capacitor, which passively reduces the FBAR's temperature coefficient of frequency (TCF) by about 40 ppm/°C at 2.8 GHz. With this approach, zero TCF would easily have been achieved if the FBARs were built on AlN rather than ZnO. The other type of temperature compensated FBAR is built on a surface-micromachined SiO2 cantilever that is released by XeF2 vapor etching of silicon. The Al-ZnO-Al-SiO2 FBAR is measured to have a TCF of -0.45 ppm/°C (between 85 °C and 110 °C) at 4.4 GHz.

Original languageEnglish (US)
Pages (from-to)369-371
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number6
DOIs
StatePublished - Jun 1 2005

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Keywords

  • Air-gap capacitor
  • Film bulk acoustic resonators (FBARs)
  • Surface micromaching
  • Temperature compensation
  • XeF

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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