Temperature-compensated film bulk acoustic resonator above 2 GHz

Wei Pang, Hongyu Yu, Hao Zhang, Eun Sok Kim

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Two different types of temperature-compensated film bulk acoustic resonators (FBARs) are designed, fabricated, and tested. One is formed by integrating FBAR with a surface-micro-machined air-gap capacitor, which passively reduces the FBAR's temperature coefficient of frequency (TCF) by about 40 ppm/°C at 2.8 GHz. With this approach, zero TCF would easily have been achieved if the FBARs were built on AlN rather than ZnO. The other type of temperature compensated FBAR is built on a surface-micromachined SiO2 cantilever that is released by XeF2 vapor etching of silicon. The Al-ZnO-Al-SiO2 FBAR is measured to have a TCF of -0.45 ppm/°C (between 85 °C and 110 °C) at 4.4 GHz.

Original languageEnglish (US)
Pages (from-to)369-371
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number6
DOIs
StatePublished - Jun 2005
Externally publishedYes

Fingerprint

Acoustic resonators
Temperature
Silicon
Etching
Capacitors
Vapors
Air

Keywords

  • Air-gap capacitor
  • Film bulk acoustic resonators (FBARs)
  • Surface micromaching
  • Temperature compensation
  • XeF

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Temperature-compensated film bulk acoustic resonator above 2 GHz. / Pang, Wei; Yu, Hongyu; Zhang, Hao; Kim, Eun Sok.

In: IEEE Electron Device Letters, Vol. 26, No. 6, 06.2005, p. 369-371.

Research output: Contribution to journalArticle

Pang, Wei ; Yu, Hongyu ; Zhang, Hao ; Kim, Eun Sok. / Temperature-compensated film bulk acoustic resonator above 2 GHz. In: IEEE Electron Device Letters. 2005 ; Vol. 26, No. 6. pp. 369-371.
@article{2f088ae64d364f4c8bf0fb29acbf6519,
title = "Temperature-compensated film bulk acoustic resonator above 2 GHz",
abstract = "Two different types of temperature-compensated film bulk acoustic resonators (FBARs) are designed, fabricated, and tested. One is formed by integrating FBAR with a surface-micro-machined air-gap capacitor, which passively reduces the FBAR's temperature coefficient of frequency (TCF) by about 40 ppm/°C at 2.8 GHz. With this approach, zero TCF would easily have been achieved if the FBARs were built on AlN rather than ZnO. The other type of temperature compensated FBAR is built on a surface-micromachined SiO2 cantilever that is released by XeF2 vapor etching of silicon. The Al-ZnO-Al-SiO2 FBAR is measured to have a TCF of -0.45 ppm/°C (between 85 °C and 110 °C) at 4.4 GHz.",
keywords = "Air-gap capacitor, Film bulk acoustic resonators (FBARs), Surface micromaching, Temperature compensation, XeF",
author = "Wei Pang and Hongyu Yu and Hao Zhang and Kim, {Eun Sok}",
year = "2005",
month = "6",
doi = "10.1109/LED.2005.848113",
language = "English (US)",
volume = "26",
pages = "369--371",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

TY - JOUR

T1 - Temperature-compensated film bulk acoustic resonator above 2 GHz

AU - Pang, Wei

AU - Yu, Hongyu

AU - Zhang, Hao

AU - Kim, Eun Sok

PY - 2005/6

Y1 - 2005/6

N2 - Two different types of temperature-compensated film bulk acoustic resonators (FBARs) are designed, fabricated, and tested. One is formed by integrating FBAR with a surface-micro-machined air-gap capacitor, which passively reduces the FBAR's temperature coefficient of frequency (TCF) by about 40 ppm/°C at 2.8 GHz. With this approach, zero TCF would easily have been achieved if the FBARs were built on AlN rather than ZnO. The other type of temperature compensated FBAR is built on a surface-micromachined SiO2 cantilever that is released by XeF2 vapor etching of silicon. The Al-ZnO-Al-SiO2 FBAR is measured to have a TCF of -0.45 ppm/°C (between 85 °C and 110 °C) at 4.4 GHz.

AB - Two different types of temperature-compensated film bulk acoustic resonators (FBARs) are designed, fabricated, and tested. One is formed by integrating FBAR with a surface-micro-machined air-gap capacitor, which passively reduces the FBAR's temperature coefficient of frequency (TCF) by about 40 ppm/°C at 2.8 GHz. With this approach, zero TCF would easily have been achieved if the FBARs were built on AlN rather than ZnO. The other type of temperature compensated FBAR is built on a surface-micromachined SiO2 cantilever that is released by XeF2 vapor etching of silicon. The Al-ZnO-Al-SiO2 FBAR is measured to have a TCF of -0.45 ppm/°C (between 85 °C and 110 °C) at 4.4 GHz.

KW - Air-gap capacitor

KW - Film bulk acoustic resonators (FBARs)

KW - Surface micromaching

KW - Temperature compensation

KW - XeF

UR - http://www.scopus.com/inward/record.url?scp=20544453622&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20544453622&partnerID=8YFLogxK

U2 - 10.1109/LED.2005.848113

DO - 10.1109/LED.2005.848113

M3 - Article

AN - SCOPUS:20544453622

VL - 26

SP - 369

EP - 371

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 6

ER -