Temperature-compensated film bulk acoustic resonator above 2 GHz

Wei Pang; Hongyu Yu; Hao Zhang; Eun Sok Kim

doi:10.1109/LED.2005.848113

Temperature-compensated film bulk acoustic resonator above 2 GHz

Wei Pang, Hongyu Yu, Hao Zhang, Eun Sok Kim

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Two different types of temperature-compensated film bulk acoustic resonators (FBARs) are designed, fabricated, and tested. One is formed by integrating FBAR with a surface-micro-machined air-gap capacitor, which passively reduces the FBAR's temperature coefficient of frequency (TCF) by about 40 ppm/°C at 2.8 GHz. With this approach, zero TCF would easily have been achieved if the FBARs were built on AlN rather than ZnO. The other type of temperature compensated FBAR is built on a surface-micromachined SiO₂ cantilever that is released by XeF₂ vapor etching of silicon. The Al-ZnO-Al-SiO₂ FBAR is measured to have a TCF of -0.45 ppm/°C (between 85 °C and 110 °C) at 4.4 GHz.

Original language	English (US)
Pages (from-to)	369-371
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	26
Issue number	6
DOIs	https://doi.org/10.1109/LED.2005.848113
State	Published - Jun 2005
Externally published	Yes

Keywords

Air-gap capacitor
Film bulk acoustic resonators (FBARs)
Surface micromaching
Temperature compensation
XeF

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2005.848113

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title = "Temperature-compensated film bulk acoustic resonator above 2 GHz",

abstract = "Two different types of temperature-compensated film bulk acoustic resonators (FBARs) are designed, fabricated, and tested. One is formed by integrating FBAR with a surface-micro-machined air-gap capacitor, which passively reduces the FBAR's temperature coefficient of frequency (TCF) by about 40 ppm/°C at 2.8 GHz. With this approach, zero TCF would easily have been achieved if the FBARs were built on AlN rather than ZnO. The other type of temperature compensated FBAR is built on a surface-micromachined SiO2 cantilever that is released by XeF2 vapor etching of silicon. The Al-ZnO-Al-SiO2 FBAR is measured to have a TCF of -0.45 ppm/°C (between 85 °C and 110 °C) at 4.4 GHz.",

keywords = "Air-gap capacitor, Film bulk acoustic resonators (FBARs), Surface micromaching, Temperature compensation, XeF",

author = "Wei Pang and Hongyu Yu and Hao Zhang and Kim, {Eun Sok}",

note = "Funding Information: Manuscript received February 14, 2005; revised March 28, 2005. This work was supported by the Chip Scale Atomic Clock (CSAC) program of the Defense Advanced Research Projects Agency (DARPA) under Contract N66001-02-1-8918. The review of this letter was arranged by Editor J. Sin.",

year = "2005",

month = jun,

doi = "10.1109/LED.2005.848113",

language = "English (US)",

volume = "26",

pages = "369--371",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

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AU - Pang, Wei

AU - Yu, Hongyu

AU - Zhang, Hao

AU - Kim, Eun Sok

N1 - Funding Information: Manuscript received February 14, 2005; revised March 28, 2005. This work was supported by the Chip Scale Atomic Clock (CSAC) program of the Defense Advanced Research Projects Agency (DARPA) under Contract N66001-02-1-8918. The review of this letter was arranged by Editor J. Sin.

PY - 2005/6

Y1 - 2005/6

N2 - Two different types of temperature-compensated film bulk acoustic resonators (FBARs) are designed, fabricated, and tested. One is formed by integrating FBAR with a surface-micro-machined air-gap capacitor, which passively reduces the FBAR's temperature coefficient of frequency (TCF) by about 40 ppm/°C at 2.8 GHz. With this approach, zero TCF would easily have been achieved if the FBARs were built on AlN rather than ZnO. The other type of temperature compensated FBAR is built on a surface-micromachined SiO2 cantilever that is released by XeF2 vapor etching of silicon. The Al-ZnO-Al-SiO2 FBAR is measured to have a TCF of -0.45 ppm/°C (between 85 °C and 110 °C) at 4.4 GHz.

AB - Two different types of temperature-compensated film bulk acoustic resonators (FBARs) are designed, fabricated, and tested. One is formed by integrating FBAR with a surface-micro-machined air-gap capacitor, which passively reduces the FBAR's temperature coefficient of frequency (TCF) by about 40 ppm/°C at 2.8 GHz. With this approach, zero TCF would easily have been achieved if the FBARs were built on AlN rather than ZnO. The other type of temperature compensated FBAR is built on a surface-micromachined SiO2 cantilever that is released by XeF2 vapor etching of silicon. The Al-ZnO-Al-SiO2 FBAR is measured to have a TCF of -0.45 ppm/°C (between 85 °C and 110 °C) at 4.4 GHz.

KW - Air-gap capacitor

KW - Film bulk acoustic resonators (FBARs)

KW - Surface micromaching

KW - Temperature compensation

KW - XeF

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Temperature-compensated film bulk acoustic resonator above 2 GHz

Abstract

Keywords

ASJC Scopus subject areas

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