Temperature and process variations aware power gating of functional units

Deepa Kannan, Aviral Shrivastava, Vipin Mohan, Sarvesh Bhardwaj, Sarma Vrudhula

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

Technology scaling has resulted in an exponential increase in the leakage power as well as the variations in leakage power of fabricated chips. Functional units (FUs), like Integer ALUs are regions of high power density and significantly contribute to the variation in the whole processor power consumption. Hence, it is important to reduce both the power consumption and the variation in power consumption of the FUs. Among existing FU power reduction techniques, power gating (PG) has been most effective. In this paper, we introduce a leakage sensor inside the FUs and propose a temperature and process variation aware power gating scheme, Leakage Aware Power Gating (LA-PG). Our experimental results demonstrate that LA-PG results in 22% reduction in mean and a 25% reduction in standard deviation of the ALU energy consumption when compared to existing power gating techniques, without significant performance penalty.

Original languageEnglish (US)
Title of host publicationProceedings - 21st International Conference on VLSI Design, VLSI DESIGN 2008
Pages515-520
Number of pages6
DOIs
StatePublished - Jul 25 2008
Event21st International Conference on VLSI Design, VLSI DESIGN 2008 - Hyderabad, India
Duration: Jan 4 2008Jan 8 2008

Publication series

NameProceedings of the IEEE International Frequency Control Symposium and Exposition

Other

Other21st International Conference on VLSI Design, VLSI DESIGN 2008
CountryIndia
CityHyderabad
Period1/4/081/8/08

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Kannan, D., Shrivastava, A., Mohan, V., Bhardwaj, S., & Vrudhula, S. (2008). Temperature and process variations aware power gating of functional units. In Proceedings - 21st International Conference on VLSI Design, VLSI DESIGN 2008 (pp. 515-520). [4450551] (Proceedings of the IEEE International Frequency Control Symposium and Exposition). https://doi.org/10.1109/VLSI.2008.83