Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers

Konstanze Hild, Stephen J. Sweeney, Igor P. Marko, Shirong R. Jin, Shane Johnson, Sergio A. Chaparro, Shuiqing Yu, Yong-Hang Zhang

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

We investigated the temperature and pressure dependence of carrier recombination processes occurring in GaAsSb edge-emitting lasers operating near 1.3 μm. Below ∼100K, the threshold current, Ith, is dominated by the radiative current, Irad, and is proportional to temperature, T. However, above 100K, non-radiative recombination increases abruptly such that by 125 K it accounts for 40% of Ith. From high pressure measurements at this temperature, we find that the non-radiative current decreases with increasing pressure, consistent with the presence of Auger recombination. At room temperature, non-radiative recombination accounts for ∼90% I th and gives rise to a super-linear temperature dependence of I th, in spite of the fact that Irad ∝ T. At room temperature the non-radiative current increases with increasing pressure, indicating that under ambient operating conditions, the devices are also limited by carrier leakage into the Γr-minimum of the GaAs barriers and possibly also into the X-minima of the GaAsP confining layers.

Original languageEnglish (US)
Pages (from-to)197-202
Number of pages6
JournalPhysica Status Solidi (B) Basic Research
Volume244
Issue number1
DOIs
StatePublished - Jan 1 2007

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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