We investigated the temperature and pressure dependence of carrier recombination processes occurring in GaAsSb edge-emitting lasers operating near 1.3 μm. Below ∼100K, the threshold current, Ith, is dominated by the radiative current, Irad, and is proportional to temperature, T. However, above 100K, non-radiative recombination increases abruptly such that by 125 K it accounts for 40% of Ith. From high pressure measurements at this temperature, we find that the non-radiative current decreases with increasing pressure, consistent with the presence of Auger recombination. At room temperature, non-radiative recombination accounts for ∼90% I th and gives rise to a super-linear temperature dependence of I th, in spite of the fact that Irad ∝ T. At room temperature the non-radiative current increases with increasing pressure, indicating that under ambient operating conditions, the devices are also limited by carrier leakage into the Γr-minimum of the GaAs barriers and possibly also into the X-minima of the GaAsP confining layers.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics