TY - JOUR
T1 - Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers
AU - Hild, Konstanze
AU - Sweeney, Stephen J.
AU - Marko, Igor P.
AU - Jin, Shirong R.
AU - Johnson, Shane
AU - Chaparro, Sergio A.
AU - Yu, Shuiqing
AU - Zhang, Yong-Hang
PY - 2007/1
Y1 - 2007/1
N2 - We investigated the temperature and pressure dependence of carrier recombination processes occurring in GaAsSb edge-emitting lasers operating near 1.3 μm. Below ∼100K, the threshold current, Ith, is dominated by the radiative current, Irad, and is proportional to temperature, T. However, above 100K, non-radiative recombination increases abruptly such that by 125 K it accounts for 40% of Ith. From high pressure measurements at this temperature, we find that the non-radiative current decreases with increasing pressure, consistent with the presence of Auger recombination. At room temperature, non-radiative recombination accounts for ∼90% I th and gives rise to a super-linear temperature dependence of I th, in spite of the fact that Irad ∝ T. At room temperature the non-radiative current increases with increasing pressure, indicating that under ambient operating conditions, the devices are also limited by carrier leakage into the Γr-minimum of the GaAs barriers and possibly also into the X-minima of the GaAsP confining layers.
AB - We investigated the temperature and pressure dependence of carrier recombination processes occurring in GaAsSb edge-emitting lasers operating near 1.3 μm. Below ∼100K, the threshold current, Ith, is dominated by the radiative current, Irad, and is proportional to temperature, T. However, above 100K, non-radiative recombination increases abruptly such that by 125 K it accounts for 40% of Ith. From high pressure measurements at this temperature, we find that the non-radiative current decreases with increasing pressure, consistent with the presence of Auger recombination. At room temperature, non-radiative recombination accounts for ∼90% I th and gives rise to a super-linear temperature dependence of I th, in spite of the fact that Irad ∝ T. At room temperature the non-radiative current increases with increasing pressure, indicating that under ambient operating conditions, the devices are also limited by carrier leakage into the Γr-minimum of the GaAs barriers and possibly also into the X-minima of the GaAsP confining layers.
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U2 - 10.1002/pssb.200672571
DO - 10.1002/pssb.200672571
M3 - Article
AN - SCOPUS:33847036338
SN - 0370-1972
VL - 244
SP - 197
EP - 202
JO - Physica Status Solidi (B) Basic Research
JF - Physica Status Solidi (B) Basic Research
IS - 1
ER -