TEM characterization of yttrium silicide layers synthesized by ion implantation

N. D. Theodore, Terry Alford, J. C. Barbour, C. B. Carter, J. W. Mayer

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The structure of Si implanted with high doses of yttrium has been investigated by varying implantation doses and energies. As implantation doses increase into the low 1017 cm-2 range, silicide precipitates form. The precipitates are thin and long and lie parallel to {111} planes in the Si matrix. As dopant concentrations increase, the precipitates themselves become more equiaxed, aspect ratios decrease, and precipitates densities increase until the precipitates coalesce to form a continuous buried layer of yttrium silicide within the Si matrix. The layer thickness is relatively uneven. As implant doses increase to ∼ 4×1017 cm-2, the layer thicknesses become more uniform although there are still defects present. As the implant doses increase further, the precipitate bands on either side of the continuous layer decrease due to gettering of yttrium to the layer. As the energy of the implant is increased, the appearance of the sample is similar to that of the lower energy implants except that the layer is buried deeper in the Si matrix. Observations of the silicide are consistent with its having the AlB2 structure with ordered vacancies on the Si sublattice.

Original languageEnglish (US)
Pages (from-to)527-532
Number of pages6
JournalApplied Physics A Solids and Surfaces
Volume54
Issue number6
DOIs
StatePublished - Jun 1992
Externally publishedYes

Fingerprint

Yttrium
yttrium
Ion implantation
ion implantation
Precipitates
precipitates
Transmission electron microscopy
transmission electron microscopy
dosage
implantation
matrices
sublattices
Vacancies
energy
aspect ratio
Aspect ratio
Doping (additives)
Defects
defects

Keywords

  • 61.10
  • 61.70
  • 68.55

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Materials Science(all)

Cite this

TEM characterization of yttrium silicide layers synthesized by ion implantation. / Theodore, N. D.; Alford, Terry; Barbour, J. C.; Carter, C. B.; Mayer, J. W.

In: Applied Physics A Solids and Surfaces, Vol. 54, No. 6, 06.1992, p. 527-532.

Research output: Contribution to journalArticle

Theodore, N. D. ; Alford, Terry ; Barbour, J. C. ; Carter, C. B. ; Mayer, J. W. / TEM characterization of yttrium silicide layers synthesized by ion implantation. In: Applied Physics A Solids and Surfaces. 1992 ; Vol. 54, No. 6. pp. 527-532.
@article{cc0b17fad91a45ed8ba6661912b49a53,
title = "TEM characterization of yttrium silicide layers synthesized by ion implantation",
abstract = "The structure of Si implanted with high doses of yttrium has been investigated by varying implantation doses and energies. As implantation doses increase into the low 1017 cm-2 range, silicide precipitates form. The precipitates are thin and long and lie parallel to {111} planes in the Si matrix. As dopant concentrations increase, the precipitates themselves become more equiaxed, aspect ratios decrease, and precipitates densities increase until the precipitates coalesce to form a continuous buried layer of yttrium silicide within the Si matrix. The layer thickness is relatively uneven. As implant doses increase to ∼ 4×1017 cm-2, the layer thicknesses become more uniform although there are still defects present. As the implant doses increase further, the precipitate bands on either side of the continuous layer decrease due to gettering of yttrium to the layer. As the energy of the implant is increased, the appearance of the sample is similar to that of the lower energy implants except that the layer is buried deeper in the Si matrix. Observations of the silicide are consistent with its having the AlB2 structure with ordered vacancies on the Si sublattice.",
keywords = "61.10, 61.70, 68.55",
author = "Theodore, {N. D.} and Terry Alford and Barbour, {J. C.} and Carter, {C. B.} and Mayer, {J. W.}",
year = "1992",
month = "6",
doi = "10.1007/BF00324334",
language = "English (US)",
volume = "54",
pages = "527--532",
journal = "Applied Physics",
issn = "0340-3793",
publisher = "Springer Heidelberg",
number = "6",

}

TY - JOUR

T1 - TEM characterization of yttrium silicide layers synthesized by ion implantation

AU - Theodore, N. D.

AU - Alford, Terry

AU - Barbour, J. C.

AU - Carter, C. B.

AU - Mayer, J. W.

PY - 1992/6

Y1 - 1992/6

N2 - The structure of Si implanted with high doses of yttrium has been investigated by varying implantation doses and energies. As implantation doses increase into the low 1017 cm-2 range, silicide precipitates form. The precipitates are thin and long and lie parallel to {111} planes in the Si matrix. As dopant concentrations increase, the precipitates themselves become more equiaxed, aspect ratios decrease, and precipitates densities increase until the precipitates coalesce to form a continuous buried layer of yttrium silicide within the Si matrix. The layer thickness is relatively uneven. As implant doses increase to ∼ 4×1017 cm-2, the layer thicknesses become more uniform although there are still defects present. As the implant doses increase further, the precipitate bands on either side of the continuous layer decrease due to gettering of yttrium to the layer. As the energy of the implant is increased, the appearance of the sample is similar to that of the lower energy implants except that the layer is buried deeper in the Si matrix. Observations of the silicide are consistent with its having the AlB2 structure with ordered vacancies on the Si sublattice.

AB - The structure of Si implanted with high doses of yttrium has been investigated by varying implantation doses and energies. As implantation doses increase into the low 1017 cm-2 range, silicide precipitates form. The precipitates are thin and long and lie parallel to {111} planes in the Si matrix. As dopant concentrations increase, the precipitates themselves become more equiaxed, aspect ratios decrease, and precipitates densities increase until the precipitates coalesce to form a continuous buried layer of yttrium silicide within the Si matrix. The layer thickness is relatively uneven. As implant doses increase to ∼ 4×1017 cm-2, the layer thicknesses become more uniform although there are still defects present. As the implant doses increase further, the precipitate bands on either side of the continuous layer decrease due to gettering of yttrium to the layer. As the energy of the implant is increased, the appearance of the sample is similar to that of the lower energy implants except that the layer is buried deeper in the Si matrix. Observations of the silicide are consistent with its having the AlB2 structure with ordered vacancies on the Si sublattice.

KW - 61.10

KW - 61.70

KW - 68.55

UR - http://www.scopus.com/inward/record.url?scp=0344977662&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0344977662&partnerID=8YFLogxK

U2 - 10.1007/BF00324334

DO - 10.1007/BF00324334

M3 - Article

VL - 54

SP - 527

EP - 532

JO - Applied Physics

JF - Applied Physics

SN - 0340-3793

IS - 6

ER -