TEM characterization of SiGeC material system

D. Chandrasekhar; David Smith; John Kouvetakis; McD Robinson

TEM characterization of SiGeC material system

D. Chandrasekhar, David Smith, John Kouvetakis, McD Robinson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Si_1-x-yGe_xC_y samples grown on Si substrates by chemical vapor deposition was characterized by transmission electron microscopy (TEM). Different precursors and flow rates were used to vary the relative elemental compositions. Rutherford backscattering and secondary ion mass spectroscopy were employed for compositional analysis and TEM was used to determine microstructure. Electron transparent specimens were prepared in cross-section by a standard technique involving mechanical grinding, dimpling and argon ion-milling. Selected area diffraction patterns and optical diffractograms were used in determining the structure and lattice constants.

Original language	English (US)
Title of host publication	Proceedings - Annual Meeting, Microscopy Society of America
Editors	G.W. Bailey, A.J. Garratt-Reed
Pages	840-841
Number of pages	2
State	Published - 1994
Event	Proceedings of the 52nd Annual Meeting of the Microscopy Society of America - New Orleans, LA, USA Duration: Jul 31 1994 → Aug 5 1994

Other

Other	Proceedings of the 52nd Annual Meeting of the Microscopy Society of America
City	New Orleans, LA, USA
Period	7/31/94 → 8/5/94

ASJC Scopus subject areas

General Engineering

Cite this

@inproceedings{2d158cc7656d4fb08ec040ff807f8626,

title = "TEM characterization of SiGeC material system",

abstract = "Si1-x-yGexCy samples grown on Si substrates by chemical vapor deposition was characterized by transmission electron microscopy (TEM). Different precursors and flow rates were used to vary the relative elemental compositions. Rutherford backscattering and secondary ion mass spectroscopy were employed for compositional analysis and TEM was used to determine microstructure. Electron transparent specimens were prepared in cross-section by a standard technique involving mechanical grinding, dimpling and argon ion-milling. Selected area diffraction patterns and optical diffractograms were used in determining the structure and lattice constants.",

author = "D. Chandrasekhar and David Smith and John Kouvetakis and McD Robinson",

year = "1994",

language = "English (US)",

pages = "840--841",

editor = "G.W. Bailey and A.J. Garratt-Reed",

booktitle = "Proceedings - Annual Meeting, Microscopy Society of America",

note = "Proceedings of the 52nd Annual Meeting of the Microscopy Society of America ; Conference date: 31-07-1994 Through 05-08-1994",

}

TY - GEN

T1 - TEM characterization of SiGeC material system

AU - Chandrasekhar, D.

AU - Smith, David

AU - Kouvetakis, John

AU - Robinson, McD

PY - 1994

Y1 - 1994

N2 - Si1-x-yGexCy samples grown on Si substrates by chemical vapor deposition was characterized by transmission electron microscopy (TEM). Different precursors and flow rates were used to vary the relative elemental compositions. Rutherford backscattering and secondary ion mass spectroscopy were employed for compositional analysis and TEM was used to determine microstructure. Electron transparent specimens were prepared in cross-section by a standard technique involving mechanical grinding, dimpling and argon ion-milling. Selected area diffraction patterns and optical diffractograms were used in determining the structure and lattice constants.

AB - Si1-x-yGexCy samples grown on Si substrates by chemical vapor deposition was characterized by transmission electron microscopy (TEM). Different precursors and flow rates were used to vary the relative elemental compositions. Rutherford backscattering and secondary ion mass spectroscopy were employed for compositional analysis and TEM was used to determine microstructure. Electron transparent specimens were prepared in cross-section by a standard technique involving mechanical grinding, dimpling and argon ion-milling. Selected area diffraction patterns and optical diffractograms were used in determining the structure and lattice constants.

UR - http://www.scopus.com/inward/record.url?scp=0028737888&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028737888&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0028737888

SP - 840

EP - 841

BT - Proceedings - Annual Meeting, Microscopy Society of America

A2 - Bailey, G.W.

A2 - Garratt-Reed, A.J.

T2 - Proceedings of the 52nd Annual Meeting of the Microscopy Society of America

Y2 - 31 July 1994 through 5 August 1994

ER -

TEM characterization of SiGeC material system

Abstract

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ASJC Scopus subject areas

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