TEM characterization of SiGeC material system

D. Chandrasekhar, David Smith, John Kouvetakis, McD Robinson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Si1-x-yGexCy samples grown on Si substrates by chemical vapor deposition was characterized by transmission electron microscopy (TEM). Different precursors and flow rates were used to vary the relative elemental compositions. Rutherford backscattering and secondary ion mass spectroscopy were employed for compositional analysis and TEM was used to determine microstructure. Electron transparent specimens were prepared in cross-section by a standard technique involving mechanical grinding, dimpling and argon ion-milling. Selected area diffraction patterns and optical diffractograms were used in determining the structure and lattice constants.

Original languageEnglish (US)
Title of host publicationProceedings - Annual Meeting, Microscopy Society of America
EditorsG.W. Bailey, A.J. Garratt-Reed
Pages840-841
Number of pages2
StatePublished - 1994
EventProceedings of the 52nd Annual Meeting of the Microscopy Society of America - New Orleans, LA, USA
Duration: Jul 31 1994Aug 5 1994

Other

OtherProceedings of the 52nd Annual Meeting of the Microscopy Society of America
CityNew Orleans, LA, USA
Period7/31/948/5/94

ASJC Scopus subject areas

  • Engineering(all)

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    Chandrasekhar, D., Smith, D., Kouvetakis, J., & Robinson, M. (1994). TEM characterization of SiGeC material system. In G. W. Bailey, & A. J. Garratt-Reed (Eds.), Proceedings - Annual Meeting, Microscopy Society of America (pp. 840-841)