A microstructural study of HgCdTe/CdTe/GaAs(211)B and CdTe/GaAs(211)B heterostructures grown using molecular beam epitaxy (MBE) was carried out using transmission electron microscopy and small-probe microanalysis. High-quality MBE-grown CdTe on GaAs(211)B substrates was demonstrated to be a viable composite substrate platform for HgCdTe growth. In addition, analysis of interfacial misfit dislocations and residual strain showed that the CdTe/GaAs interface was fully relaxed except in localized regions where GaAs surface polishing had caused small pits. In the case of HgCdTe/CdTe/GaAs(211)B, the use of thin HgTe buffer layers between HgCdTe and CdTe for improving the HgCdTe crystal quality was also investigated.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry