TEM characterization of HgCdTe/CdTe grown on GaAs(211)B substrates

Jae Jin Kim, R. N. Jacobs, L. A. Almeida, M. Jaime-Vasquez, C. Nozaki, David Smith

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

A microstructural study of HgCdTe/CdTe/GaAs(211)B and CdTe/GaAs(211)B heterostructures grown using molecular beam epitaxy (MBE) was carried out using transmission electron microscopy and small-probe microanalysis. High-quality MBE-grown CdTe on GaAs(211)B substrates was demonstrated to be a viable composite substrate platform for HgCdTe growth. In addition, analysis of interfacial misfit dislocations and residual strain showed that the CdTe/GaAs interface was fully relaxed except in localized regions where GaAs surface polishing had caused small pits. In the case of HgCdTe/CdTe/GaAs(211)B, the use of thin HgTe buffer layers between HgCdTe and CdTe for improving the HgCdTe crystal quality was also investigated.

Original languageEnglish (US)
Pages (from-to)3142-3147
Number of pages6
JournalJournal of Electronic Materials
Volume42
Issue number11
DOIs
StatePublished - Nov 1 2013

Keywords

  • CdTe/GaAs(211)B
  • EDXS
  • HgCdTe
  • MBE
  • TEM

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Kim, J. J., Jacobs, R. N., Almeida, L. A., Jaime-Vasquez, M., Nozaki, C., & Smith, D. (2013). TEM characterization of HgCdTe/CdTe grown on GaAs(211)B substrates. Journal of Electronic Materials, 42(11), 3142-3147. https://doi.org/10.1007/s11664-013-2688-7