TEM characterization of HgCdTe/CdTe grown on GaAs(211)B substrates

Jae Jin Kim, R. N. Jacobs, L. A. Almeida, M. Jaime-Vasquez, C. Nozaki, David Smith

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A microstructural study of HgCdTe/CdTe/GaAs(211)B and CdTe/GaAs(211)B heterostructures grown using molecular beam epitaxy (MBE) was carried out using transmission electron microscopy and small-probe microanalysis. High-quality MBE-grown CdTe on GaAs(211)B substrates was demonstrated to be a viable composite substrate platform for HgCdTe growth. In addition, analysis of interfacial misfit dislocations and residual strain showed that the CdTe/GaAs interface was fully relaxed except in localized regions where GaAs surface polishing had caused small pits. In the case of HgCdTe/CdTe/GaAs(211)B, the use of thin HgTe buffer layers between HgCdTe and CdTe for improving the HgCdTe crystal quality was also investigated.

Original languageEnglish (US)
Pages (from-to)3142-3147
Number of pages6
JournalJournal of Electronic Materials
Volume42
Issue number11
DOIs
StatePublished - Nov 2013

Fingerprint

Molecular beam epitaxy
molecular beam epitaxy
Transmission electron microscopy
transmission electron microscopy
Microanalysis
Substrates
Buffer layers
Polishing
Dislocations (crystals)
microanalysis
polishing
Heterojunctions
platforms
buffers
Crystals
composite materials
probes
Composite materials
crystals
gallium arsenide

Keywords

  • CdTe/GaAs(211)B
  • EDXS
  • HgCdTe
  • MBE
  • TEM

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Kim, J. J., Jacobs, R. N., Almeida, L. A., Jaime-Vasquez, M., Nozaki, C., & Smith, D. (2013). TEM characterization of HgCdTe/CdTe grown on GaAs(211)B substrates. Journal of Electronic Materials, 42(11), 3142-3147. https://doi.org/10.1007/s11664-013-2688-7

TEM characterization of HgCdTe/CdTe grown on GaAs(211)B substrates. / Kim, Jae Jin; Jacobs, R. N.; Almeida, L. A.; Jaime-Vasquez, M.; Nozaki, C.; Smith, David.

In: Journal of Electronic Materials, Vol. 42, No. 11, 11.2013, p. 3142-3147.

Research output: Contribution to journalArticle

Kim, JJ, Jacobs, RN, Almeida, LA, Jaime-Vasquez, M, Nozaki, C & Smith, D 2013, 'TEM characterization of HgCdTe/CdTe grown on GaAs(211)B substrates', Journal of Electronic Materials, vol. 42, no. 11, pp. 3142-3147. https://doi.org/10.1007/s11664-013-2688-7
Kim, Jae Jin ; Jacobs, R. N. ; Almeida, L. A. ; Jaime-Vasquez, M. ; Nozaki, C. ; Smith, David. / TEM characterization of HgCdTe/CdTe grown on GaAs(211)B substrates. In: Journal of Electronic Materials. 2013 ; Vol. 42, No. 11. pp. 3142-3147.
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