TEM characterization of HgCdTe/CdTe grown on GaAs(211)B substrates

Jae Jin Kim; R. N. Jacobs; L. A. Almeida; M. Jaime-Vasquez; C. Nozaki; David Smith

doi:10.1007/s11664-013-2688-7

TEM characterization of HgCdTe/CdTe grown on GaAs(211)B substrates

Jae Jin Kim, R. N. Jacobs, L. A. Almeida, M. Jaime-Vasquez, C. Nozaki, David Smith

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A microstructural study of HgCdTe/CdTe/GaAs(211)B and CdTe/GaAs(211)B heterostructures grown using molecular beam epitaxy (MBE) was carried out using transmission electron microscopy and small-probe microanalysis. High-quality MBE-grown CdTe on GaAs(211)B substrates was demonstrated to be a viable composite substrate platform for HgCdTe growth. In addition, analysis of interfacial misfit dislocations and residual strain showed that the CdTe/GaAs interface was fully relaxed except in localized regions where GaAs surface polishing had caused small pits. In the case of HgCdTe/CdTe/GaAs(211)B, the use of thin HgTe buffer layers between HgCdTe and CdTe for improving the HgCdTe crystal quality was also investigated.

Original language	English (US)
Pages (from-to)	3142-3147
Number of pages	6
Journal	Journal of Electronic Materials
Volume	42
Issue number	11
DOIs	https://doi.org/10.1007/s11664-013-2688-7
State	Published - Nov 2013

Keywords

CdTe/GaAs(211)B
EDXS
HgCdTe
MBE
TEM

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-013-2688-7

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@article{eb88b32b197c4828915d40d7f35c4b3c,

title = "TEM characterization of HgCdTe/CdTe grown on GaAs(211)B substrates",

abstract = "A microstructural study of HgCdTe/CdTe/GaAs(211)B and CdTe/GaAs(211)B heterostructures grown using molecular beam epitaxy (MBE) was carried out using transmission electron microscopy and small-probe microanalysis. High-quality MBE-grown CdTe on GaAs(211)B substrates was demonstrated to be a viable composite substrate platform for HgCdTe growth. In addition, analysis of interfacial misfit dislocations and residual strain showed that the CdTe/GaAs interface was fully relaxed except in localized regions where GaAs surface polishing had caused small pits. In the case of HgCdTe/CdTe/GaAs(211)B, the use of thin HgTe buffer layers between HgCdTe and CdTe for improving the HgCdTe crystal quality was also investigated.",

keywords = "CdTe/GaAs(211)B, EDXS, HgCdTe, MBE, TEM",

author = "Kim, {Jae Jin} and Jacobs, {R. N.} and Almeida, {L. A.} and M. Jaime-Vasquez and C. Nozaki and David Smith",

note = "Funding Information: The work at Arizona State University has been supported by the U.S. Army Research Laboratory and the U.S. Army Research Office under Contract #54657 (Monitor: Dr. W. W. Clark). We also acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy.",

year = "2013",

month = nov,

doi = "10.1007/s11664-013-2688-7",

language = "English (US)",

volume = "42",

pages = "3142--3147",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "11",

}

TY - JOUR

T1 - TEM characterization of HgCdTe/CdTe grown on GaAs(211)B substrates

AU - Kim, Jae Jin

AU - Jacobs, R. N.

AU - Almeida, L. A.

AU - Jaime-Vasquez, M.

AU - Nozaki, C.

AU - Smith, David

N1 - Funding Information: The work at Arizona State University has been supported by the U.S. Army Research Laboratory and the U.S. Army Research Office under Contract #54657 (Monitor: Dr. W. W. Clark). We also acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy.

PY - 2013/11

Y1 - 2013/11

N2 - A microstructural study of HgCdTe/CdTe/GaAs(211)B and CdTe/GaAs(211)B heterostructures grown using molecular beam epitaxy (MBE) was carried out using transmission electron microscopy and small-probe microanalysis. High-quality MBE-grown CdTe on GaAs(211)B substrates was demonstrated to be a viable composite substrate platform for HgCdTe growth. In addition, analysis of interfacial misfit dislocations and residual strain showed that the CdTe/GaAs interface was fully relaxed except in localized regions where GaAs surface polishing had caused small pits. In the case of HgCdTe/CdTe/GaAs(211)B, the use of thin HgTe buffer layers between HgCdTe and CdTe for improving the HgCdTe crystal quality was also investigated.

AB - A microstructural study of HgCdTe/CdTe/GaAs(211)B and CdTe/GaAs(211)B heterostructures grown using molecular beam epitaxy (MBE) was carried out using transmission electron microscopy and small-probe microanalysis. High-quality MBE-grown CdTe on GaAs(211)B substrates was demonstrated to be a viable composite substrate platform for HgCdTe growth. In addition, analysis of interfacial misfit dislocations and residual strain showed that the CdTe/GaAs interface was fully relaxed except in localized regions where GaAs surface polishing had caused small pits. In the case of HgCdTe/CdTe/GaAs(211)B, the use of thin HgTe buffer layers between HgCdTe and CdTe for improving the HgCdTe crystal quality was also investigated.

KW - CdTe/GaAs(211)B

KW - EDXS

KW - HgCdTe

KW - MBE

KW - TEM

UR - http://www.scopus.com/inward/record.url?scp=84887198009&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887198009&partnerID=8YFLogxK

U2 - 10.1007/s11664-013-2688-7

DO - 10.1007/s11664-013-2688-7

M3 - Article

AN - SCOPUS:84887198009

SN - 0361-5235

VL - 42

SP - 3142

EP - 3147

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 11

ER -

TEM characterization of HgCdTe/CdTe grown on GaAs(211)B substrates

Abstract

Keywords

ASJC Scopus subject areas

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