TDDB in HfSiON/SiO2 dielectric stack: Büttiker probe based NEGF modeling, prediction and experiment

Ahmed Kamal Reza, Mohammad Khaled Hassan, Kaushik Roy, Devyani Patra, Ankita Bansal, Yu Cao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

HfO2 based high-κ metal gate (HKMG) transistors offer low leakage current and high integration density. However, they are vulnerable to defect formation. In this paper, we have demonstrated a Büttiker probe based leakage current model [1][2] for determining the gate leakage current in a HKMG transistor due to defects in the gate dielectric layer. These defects can be pre-existing defects (PEDs) as well as the stress induced defects in the gate dielectric stack. The model was also used to determine the post breakdown gate current characteristics. We have verified our model with experimentally measured data from 28nm planar devices with HfSiON/SiO2 gate dielectric layer. In addition, we have integrated the Büttiker probe method and percolation model [3] to predict the time to failure (tBD) of the device. The proposed simulation methodology can also be used to determine the required stress condition (SC) to observe breakdown in a device within a certain period of time.

Original languageEnglish (US)
Title of host publication2017 International Reliability Physics Symposium, IRPS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesDG5.1-DG5.6
ISBN (Electronic)9781509066407
DOIs
StatePublished - May 30 2017
Event2017 International Reliability Physics Symposium, IRPS 2017 - Monterey, United States
Duration: Apr 2 2017Apr 6 2017

Other

Other2017 International Reliability Physics Symposium, IRPS 2017
CountryUnited States
CityMonterey
Period4/2/174/6/17

Keywords

  • Breakdown Prediction
  • Büttiker probe
  • HfSiON
  • high-κ metal gate (HKMG)
  • Non-equilibrium Green's function (NEGF)
  • Stress Induced Leakage Current (SILC)
  • Temperature Stress
  • Time dependent Dielectric Breakdown (TDDB)
  • Voltage Stress
  • Weibull

ASJC Scopus subject areas

  • Engineering(all)

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    Reza, A. K., Hassan, M. K., Roy, K., Patra, D., Bansal, A., & Cao, Y. (2017). TDDB in HfSiON/SiO2 dielectric stack: Büttiker probe based NEGF modeling, prediction and experiment. In 2017 International Reliability Physics Symposium, IRPS 2017 (pp. DG5.1-DG5.6). [7936362] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2017.7936362