TCAD modeling of InGaN-based high temperature photovoltaic multiple quantum well solar cells

Y. Fang; Dragica Vasileska; Stephen Goodnick

TCAD modeling of InGaN-based high temperature photovoltaic multiple quantum well solar cells

Y. Fang, Dragica Vasileska, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This work presents TCAD simulation for InGaN multiple quantum well (MQW) solar cell at high temperature and high solar concentration that have recently been reported. A MQW device with 40 periods of In_0.12Ga_0.88N/GaN quantum well stack is simulated. Simulation results are in close agreement with experimental I-V data measured up to 450 °C and under concentration of up to 300 suns. The impact of polarization charges at the nitride hetero-interface is also investigated. The internal quantum efficiency (IQE) is simulated and compared with experimental data as well. A drop in IQE with increasing polarization screening factor is observed, which demonstrates that polarization effects reduce the carrier collection probability of this device structure.

Original language	English (US)
Title of host publication	IMAPS 12th International Conference and Exhibition on Device Packaging
Publisher	IMAPS-International Microelectronics and Packaging Society
State	Published - 2016
Event	IMAPS 12th International Conference and Exhibition on Device Packaging - Fountain Hills, United States Duration: Mar 14 2016 → Mar 17 2016

Other

Other	IMAPS 12th International Conference and Exhibition on Device Packaging
Country/Territory	United States
City	Fountain Hills
Period	3/14/16 → 3/17/16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Cite this

TCAD modeling of InGaN-based high temperature photovoltaic multiple quantum well solar cells. / Fang, Y.; Vasileska, Dragica ; Goodnick, Stephen.
IMAPS 12th International Conference and Exhibition on Device Packaging. IMAPS-International Microelectronics and Packaging Society, 2016.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fang, Y, Vasileska, D & Goodnick, S 2016, TCAD modeling of InGaN-based high temperature photovoltaic multiple quantum well solar cells. in IMAPS 12th International Conference and Exhibition on Device Packaging. IMAPS-International Microelectronics and Packaging Society, IMAPS 12th International Conference and Exhibition on Device Packaging, Fountain Hills, United States, 3/14/16.

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abstract = "This work presents TCAD simulation for InGaN multiple quantum well (MQW) solar cell at high temperature and high solar concentration that have recently been reported. A MQW device with 40 periods of In0.12Ga0.88N/GaN quantum well stack is simulated. Simulation results are in close agreement with experimental I-V data measured up to 450 °C and under concentration of up to 300 suns. The impact of polarization charges at the nitride hetero-interface is also investigated. The internal quantum efficiency (IQE) is simulated and compared with experimental data as well. A drop in IQE with increasing polarization screening factor is observed, which demonstrates that polarization effects reduce the carrier collection probability of this device structure.",

author = "Y. Fang and Dragica Vasileska and Stephen Goodnick",

year = "2016",

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N2 - This work presents TCAD simulation for InGaN multiple quantum well (MQW) solar cell at high temperature and high solar concentration that have recently been reported. A MQW device with 40 periods of In0.12Ga0.88N/GaN quantum well stack is simulated. Simulation results are in close agreement with experimental I-V data measured up to 450 °C and under concentration of up to 300 suns. The impact of polarization charges at the nitride hetero-interface is also investigated. The internal quantum efficiency (IQE) is simulated and compared with experimental data as well. A drop in IQE with increasing polarization screening factor is observed, which demonstrates that polarization effects reduce the carrier collection probability of this device structure.

AB - This work presents TCAD simulation for InGaN multiple quantum well (MQW) solar cell at high temperature and high solar concentration that have recently been reported. A MQW device with 40 periods of In0.12Ga0.88N/GaN quantum well stack is simulated. Simulation results are in close agreement with experimental I-V data measured up to 450 °C and under concentration of up to 300 suns. The impact of polarization charges at the nitride hetero-interface is also investigated. The internal quantum efficiency (IQE) is simulated and compared with experimental data as well. A drop in IQE with increasing polarization screening factor is observed, which demonstrates that polarization effects reduce the carrier collection probability of this device structure.

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M3 - Conference contribution

AN - SCOPUS:84995701356

BT - IMAPS 12th International Conference and Exhibition on Device Packaging

PB - IMAPS-International Microelectronics and Packaging Society

T2 - IMAPS 12th International Conference and Exhibition on Device Packaging

Y2 - 14 March 2016 through 17 March 2016

ER -

TCAD modeling of InGaN-based high temperature photovoltaic multiple quantum well solar cells

Abstract

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ASJC Scopus subject areas

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