Abstract

This work presents TCAD simulation for InGaN multiple quantum well (MQW) solar cell at high temperature and high solar concentration that have recently been reported. A MQW device with 40 periods of In0.12Ga0.88N/GaN quantum well stack is simulated. Simulation results are in close agreement with experimental I-V data measured up to 450 °C and under concentration of up to 300 suns. The impact of polarization charges at the nitride hetero-interface is also investigated. The internal quantum efficiency (IQE) is simulated and compared with experimental data as well. A drop in IQE with increasing polarization screening factor is observed, which demonstrates that polarization effects reduce the carrier collection probability of this device structure.

Original languageEnglish (US)
Title of host publicationIMAPS 12th International Conference and Exhibition on Device Packaging
PublisherIMAPS-International Microelectronics and Packaging Society
StatePublished - 2016
EventIMAPS 12th International Conference and Exhibition on Device Packaging - Fountain Hills, United States
Duration: Mar 14 2016Mar 17 2016

Other

OtherIMAPS 12th International Conference and Exhibition on Device Packaging
CountryUnited States
CityFountain Hills
Period3/14/163/17/16

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Fang, Y., Vasileska, D., & Goodnick, S. (2016). TCAD modeling of InGaN-based high temperature photovoltaic multiple quantum well solar cells. In IMAPS 12th International Conference and Exhibition on Device Packaging IMAPS-International Microelectronics and Packaging Society.