TCAD model for ag-gese3-ni cbram devices

Kiraneswar Muthuseenu; E. Carl Hylin; Hugh J. Barnaby; Priyanka Apsangi; Michael N. Kozicki; Garrett Schlenvogt; Mark Townsend

doi:10.1109/SISPAD.2019.8870539

TCAD model for ag-gese₃-ni cbram devices

Kiraneswar Muthuseenu, E. Carl Hylin, Hugh J. Barnaby, Priyanka Apsangi, Michael N. Kozicki, Garrett Schlenvogt, Mark Townsend

Electrical, Computer, and Energy Engineering, School of (IAFSE-ECEE)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A model for Ag-GeSe₃-Ni Conductive Bridge Random Access Memory (CBRAM) device is developed using Technology Computer-Aided Design (TCAD) simulations. A new field-dependent ion mobility saturation model that combines Mott-Gurney ionic transport and a high-field saturation ionic drift velocity model is implemented. Also, an electron mobility model for charge transport through the conductive filament is presented. The model simulates forming and dissolving of the filament at different bias conditions. The simulation results of CBRAM I-V hysteresis curves match well to the experimental data.

Original language	English (US)
Title of host publication	Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
Editors	Francesco Driussi
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728109404
DOIs	https://doi.org/10.1109/SISPAD.2019.8870539
State	Published - Sep 2019
Event	24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 - Udine, Italy Duration: Sep 4 2019 → Sep 6 2019

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume	2019-September

Conference

Conference	24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
Country/Territory	Italy
City	Udine
Period	9/4/19 → 9/6/19

Keywords

CBRAM
Mott-Gurney model
TCAD

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Science Applications
Modeling and Simulation

Access to Document

10.1109/SISPAD.2019.8870539

Cite this

Muthuseenu, K., Hylin, E. C., Barnaby, H. J., Apsangi, P., Kozicki, M. N., Schlenvogt, G., & Townsend, M. (2019). TCAD model for ag-gese₃-ni cbram devices. In F. Driussi (Ed.), Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 [8870539] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2019-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2019.8870539

TCAD model for ag-gese₃-ni cbram devices. / Muthuseenu, Kiraneswar; Hylin, E. Carl; Barnaby, Hugh J. et al.

Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019. ed. / Francesco Driussi. Institute of Electrical and Electronics Engineers Inc., 2019. 8870539 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2019-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Muthuseenu, K, Hylin, EC, Barnaby, HJ, Apsangi, P, Kozicki, MN, Schlenvogt, G & Townsend, M 2019, TCAD model for ag-gese₃-ni cbram devices. in F Driussi (ed.), Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019., 8870539, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, vol. 2019-September, Institute of Electrical and Electronics Engineers Inc., 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019, Udine, Italy, 9/4/19. https://doi.org/10.1109/SISPAD.2019.8870539

Muthuseenu K, Hylin EC, Barnaby HJ, Apsangi P, Kozicki MN, Schlenvogt G et al. TCAD model for ag-gese₃-ni cbram devices. In Driussi F, editor, Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8870539. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/SISPAD.2019.8870539

Muthuseenu, Kiraneswar ; Hylin, E. Carl ; Barnaby, Hugh J. et al. / TCAD model for ag-gese₃-ni cbram devices. Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019. editor / Francesco Driussi. Institute of Electrical and Electronics Engineers Inc., 2019. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

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abstract = "A model for Ag-GeSe3-Ni Conductive Bridge Random Access Memory (CBRAM) device is developed using Technology Computer-Aided Design (TCAD) simulations. A new field-dependent ion mobility saturation model that combines Mott-Gurney ionic transport and a high-field saturation ionic drift velocity model is implemented. Also, an electron mobility model for charge transport through the conductive filament is presented. The model simulates forming and dissolving of the filament at different bias conditions. The simulation results of CBRAM I-V hysteresis curves match well to the experimental data.",

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