TCAD model for ag-gese3-ni cbram devices

Kiraneswar Muthuseenu, E. Carl Hylin, Hugh J. Barnaby, Priyanka Apsangi, Michael N. Kozicki, Garrett Schlenvogt, Mark Townsend

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A model for Ag-GeSe3-Ni Conductive Bridge Random Access Memory (CBRAM) device is developed using Technology Computer-Aided Design (TCAD) simulations. A new field-dependent ion mobility saturation model that combines Mott-Gurney ionic transport and a high-field saturation ionic drift velocity model is implemented. Also, an electron mobility model for charge transport through the conductive filament is presented. The model simulates forming and dissolving of the filament at different bias conditions. The simulation results of CBRAM I-V hysteresis curves match well to the experimental data.

Original languageEnglish (US)
Title of host publicationProceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
EditorsFrancesco Driussi
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728109404
DOIs
StatePublished - Sep 2019
Event24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 - Udine, Italy
Duration: Sep 4 2019Sep 6 2019

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2019-September

Conference

Conference24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
CountryItaly
CityUdine
Period9/4/199/6/19

Keywords

  • CBRAM
  • Mott-Gurney model
  • TCAD

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modeling and Simulation

Fingerprint Dive into the research topics of 'TCAD model for ag-gese<sub>3</sub>-ni cbram devices'. Together they form a unique fingerprint.

  • Cite this

    Muthuseenu, K., Hylin, E. C., Barnaby, H. J., Apsangi, P., Kozicki, M. N., Schlenvogt, G., & Townsend, M. (2019). TCAD model for ag-gese3-ni cbram devices. In F. Driussi (Ed.), Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 [8870539] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2019-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2019.8870539