Abstract
A model for Ag-GeSe3-Ni Conductive Bridge Random Access Memory (CBRAM) device is developed using Technology Computer-Aided Design (TCAD) simulations. A new field-dependent ion mobility saturation model that combines Mott-Gurney ionic transport and a high-field saturation ionic drift velocity model is implemented. Also, an electron mobility model for charge transport through the conductive filament is presented. The model simulates forming and dissolving of the filament at different bias conditions. The simulation results of CBRAM I-V hysteresis curves match well to the experimental data.
Original language | English (US) |
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Title of host publication | Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 |
Editors | Francesco Driussi |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781728109404 |
DOIs | |
State | Published - Sep 2019 |
Event | 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 - Udine, Italy Duration: Sep 4 2019 → Sep 6 2019 |
Publication series
Name | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD |
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Volume | 2019-September |
Conference
Conference | 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 |
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Country/Territory | Italy |
City | Udine |
Period | 9/4/19 → 9/6/19 |
Keywords
- CBRAM
- Mott-Gurney model
- TCAD
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Computer Science Applications
- Modeling and Simulation