TY - JOUR
T1 - Systematic investigation of shallow acceptor levels in ZnSe
AU - Zhang, Yong-Hang
AU - Liu, W.
AU - Skromme, Brian
AU - Cheng, H.
AU - Shibli, S. M.
AU - Tamargo, M. C.
N1 - Funding Information:
The ASU portion of this work was supported by the National Science Foundation under Grant No. DMR-9106359. We thank R. Roedel for the use of his leaky-tube diffusion system for the conventional furnace anneals.
PY - 1994/4/2
Y1 - 1994/4/2
N2 - A systematic investigation of shallow acceptor levels in ZnSe grown by molecular beam epitaxy (MBE) has been performed using low temperature photoluminescence (PL) measurements as a function of excitation level, temperature, strain, and laser energy (i.e., selectively excited donor-acceptor pair luminescence or SPL). Five of the levels are due to N, Li, As, P, and O, while the chemical origins of two levels, denoted A1 and A2, have not yet been determined. The A1 level is observed in undoped material after annealing using diamond-like C (DLC) caps, while the A2 level is observed in nominally Na-doped material. The ionization energies of these levels are accurately determined from the temperature dependence of the band-to-acceptor (e-A0) peak positions, accounting for strain. Those energies are 114.3 +- 0.5, 114.2 +- 0.3, 111.3 +- 0.5, 106.1 +- 0.6, 95.0 +- 0.4, 88.4 +- 0.5, and 83 +- 3 meV, respectively, for As, Li, N, A1, A2, P, and O in unstrained material. Several excited states have been observed in SPL measurements for As, A2, O, and P for the first time. The excited states of As, O, and A2 fit well to effective mass theory, while those for P do not. A model for the strain splitting of shallow acceptor-bound excitions has been developed and confirmed using measurements on samples whose substrates have been removed. Hayne's Rule is shown to be inapplicable to shallow acceptors in ZnSe. A strain splitting of the (e-A0) peak fo As or Li acceptors in annealed material is clearly resolved and modeled.
AB - A systematic investigation of shallow acceptor levels in ZnSe grown by molecular beam epitaxy (MBE) has been performed using low temperature photoluminescence (PL) measurements as a function of excitation level, temperature, strain, and laser energy (i.e., selectively excited donor-acceptor pair luminescence or SPL). Five of the levels are due to N, Li, As, P, and O, while the chemical origins of two levels, denoted A1 and A2, have not yet been determined. The A1 level is observed in undoped material after annealing using diamond-like C (DLC) caps, while the A2 level is observed in nominally Na-doped material. The ionization energies of these levels are accurately determined from the temperature dependence of the band-to-acceptor (e-A0) peak positions, accounting for strain. Those energies are 114.3 +- 0.5, 114.2 +- 0.3, 111.3 +- 0.5, 106.1 +- 0.6, 95.0 +- 0.4, 88.4 +- 0.5, and 83 +- 3 meV, respectively, for As, Li, N, A1, A2, P, and O in unstrained material. Several excited states have been observed in SPL measurements for As, A2, O, and P for the first time. The excited states of As, O, and A2 fit well to effective mass theory, while those for P do not. A model for the strain splitting of shallow acceptor-bound excitions has been developed and confirmed using measurements on samples whose substrates have been removed. Hayne's Rule is shown to be inapplicable to shallow acceptors in ZnSe. A strain splitting of the (e-A0) peak fo As or Li acceptors in annealed material is clearly resolved and modeled.
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U2 - 10.1016/0022-0248(94)90827-3
DO - 10.1016/0022-0248(94)90827-3
M3 - Article
AN - SCOPUS:0028760635
SN - 0022-0248
VL - 138
SP - 310
EP - 317
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -