Systematic investigation of shallow acceptor levels in ZnSe

Yong-Hang Zhang, W. Liu, Brian Skromme, H. Cheng, S. M. Shibli, M. C. Tamargo

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

A systematic investigation of shallow acceptor levels in ZnSe grown by molecular beam epitaxy (MBE) has been performed using low temperature photoluminescence (PL) measurements as a function of excitation level, temperature, strain, and laser energy (i.e., selectively excited donor-acceptor pair luminescence or SPL). Five of the levels are due to N, Li, As, P, and O, while the chemical origins of two levels, denoted A1 and A2, have not yet been determined. The A1 level is observed in undoped material after annealing using diamond-like C (DLC) caps, while the A2 level is observed in nominally Na-doped material. The ionization energies of these levels are accurately determined from the temperature dependence of the band-to-acceptor (e-A0) peak positions, accounting for strain. Those energies are 114.3 +- 0.5, 114.2 +- 0.3, 111.3 +- 0.5, 106.1 +- 0.6, 95.0 +- 0.4, 88.4 +- 0.5, and 83 +- 3 meV, respectively, for As, Li, N, A1, A2, P, and O in unstrained material. Several excited states have been observed in SPL measurements for As, A2, O, and P for the first time. The excited states of As, O, and A2 fit well to effective mass theory, while those for P do not. A model for the strain splitting of shallow acceptor-bound excitions has been developed and confirmed using measurements on samples whose substrates have been removed. Hayne's Rule is shown to be inapplicable to shallow acceptors in ZnSe. A strain splitting of the (e-A0) peak fo As or Li acceptors in annealed material is clearly resolved and modeled.

Original languageEnglish (US)
Pages (from-to)310-317
Number of pages8
JournalJournal of Crystal Growth
Volume138
Issue number1-4
DOIs
StatePublished - Apr 2 1994

Fingerprint

Excited states
Diamond
Ionization potential
Molecular beam epitaxy
Temperature
Luminescence
Diamonds
Photoluminescence
excitation
Annealing
Lasers
caps
Substrates
energy
molecular beam epitaxy
diamonds
luminescence
photoluminescence
ionization
temperature dependence

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Systematic investigation of shallow acceptor levels in ZnSe. / Zhang, Yong-Hang; Liu, W.; Skromme, Brian; Cheng, H.; Shibli, S. M.; Tamargo, M. C.

In: Journal of Crystal Growth, Vol. 138, No. 1-4, 02.04.1994, p. 310-317.

Research output: Contribution to journalArticle

Zhang, Yong-Hang ; Liu, W. ; Skromme, Brian ; Cheng, H. ; Shibli, S. M. ; Tamargo, M. C. / Systematic investigation of shallow acceptor levels in ZnSe. In: Journal of Crystal Growth. 1994 ; Vol. 138, No. 1-4. pp. 310-317.
@article{c88fad79eef24ff4970f084aae4983f4,
title = "Systematic investigation of shallow acceptor levels in ZnSe",
abstract = "A systematic investigation of shallow acceptor levels in ZnSe grown by molecular beam epitaxy (MBE) has been performed using low temperature photoluminescence (PL) measurements as a function of excitation level, temperature, strain, and laser energy (i.e., selectively excited donor-acceptor pair luminescence or SPL). Five of the levels are due to N, Li, As, P, and O, while the chemical origins of two levels, denoted A1 and A2, have not yet been determined. The A1 level is observed in undoped material after annealing using diamond-like C (DLC) caps, while the A2 level is observed in nominally Na-doped material. The ionization energies of these levels are accurately determined from the temperature dependence of the band-to-acceptor (e-A0) peak positions, accounting for strain. Those energies are 114.3 +- 0.5, 114.2 +- 0.3, 111.3 +- 0.5, 106.1 +- 0.6, 95.0 +- 0.4, 88.4 +- 0.5, and 83 +- 3 meV, respectively, for As, Li, N, A1, A2, P, and O in unstrained material. Several excited states have been observed in SPL measurements for As, A2, O, and P for the first time. The excited states of As, O, and A2 fit well to effective mass theory, while those for P do not. A model for the strain splitting of shallow acceptor-bound excitions has been developed and confirmed using measurements on samples whose substrates have been removed. Hayne's Rule is shown to be inapplicable to shallow acceptors in ZnSe. A strain splitting of the (e-A0) peak fo As or Li acceptors in annealed material is clearly resolved and modeled.",
author = "Yong-Hang Zhang and W. Liu and Brian Skromme and H. Cheng and Shibli, {S. M.} and Tamargo, {M. C.}",
year = "1994",
month = "4",
day = "2",
doi = "10.1016/0022-0248(94)90827-3",
language = "English (US)",
volume = "138",
pages = "310--317",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Systematic investigation of shallow acceptor levels in ZnSe

AU - Zhang, Yong-Hang

AU - Liu, W.

AU - Skromme, Brian

AU - Cheng, H.

AU - Shibli, S. M.

AU - Tamargo, M. C.

PY - 1994/4/2

Y1 - 1994/4/2

N2 - A systematic investigation of shallow acceptor levels in ZnSe grown by molecular beam epitaxy (MBE) has been performed using low temperature photoluminescence (PL) measurements as a function of excitation level, temperature, strain, and laser energy (i.e., selectively excited donor-acceptor pair luminescence or SPL). Five of the levels are due to N, Li, As, P, and O, while the chemical origins of two levels, denoted A1 and A2, have not yet been determined. The A1 level is observed in undoped material after annealing using diamond-like C (DLC) caps, while the A2 level is observed in nominally Na-doped material. The ionization energies of these levels are accurately determined from the temperature dependence of the band-to-acceptor (e-A0) peak positions, accounting for strain. Those energies are 114.3 +- 0.5, 114.2 +- 0.3, 111.3 +- 0.5, 106.1 +- 0.6, 95.0 +- 0.4, 88.4 +- 0.5, and 83 +- 3 meV, respectively, for As, Li, N, A1, A2, P, and O in unstrained material. Several excited states have been observed in SPL measurements for As, A2, O, and P for the first time. The excited states of As, O, and A2 fit well to effective mass theory, while those for P do not. A model for the strain splitting of shallow acceptor-bound excitions has been developed and confirmed using measurements on samples whose substrates have been removed. Hayne's Rule is shown to be inapplicable to shallow acceptors in ZnSe. A strain splitting of the (e-A0) peak fo As or Li acceptors in annealed material is clearly resolved and modeled.

AB - A systematic investigation of shallow acceptor levels in ZnSe grown by molecular beam epitaxy (MBE) has been performed using low temperature photoluminescence (PL) measurements as a function of excitation level, temperature, strain, and laser energy (i.e., selectively excited donor-acceptor pair luminescence or SPL). Five of the levels are due to N, Li, As, P, and O, while the chemical origins of two levels, denoted A1 and A2, have not yet been determined. The A1 level is observed in undoped material after annealing using diamond-like C (DLC) caps, while the A2 level is observed in nominally Na-doped material. The ionization energies of these levels are accurately determined from the temperature dependence of the band-to-acceptor (e-A0) peak positions, accounting for strain. Those energies are 114.3 +- 0.5, 114.2 +- 0.3, 111.3 +- 0.5, 106.1 +- 0.6, 95.0 +- 0.4, 88.4 +- 0.5, and 83 +- 3 meV, respectively, for As, Li, N, A1, A2, P, and O in unstrained material. Several excited states have been observed in SPL measurements for As, A2, O, and P for the first time. The excited states of As, O, and A2 fit well to effective mass theory, while those for P do not. A model for the strain splitting of shallow acceptor-bound excitions has been developed and confirmed using measurements on samples whose substrates have been removed. Hayne's Rule is shown to be inapplicable to shallow acceptors in ZnSe. A strain splitting of the (e-A0) peak fo As or Li acceptors in annealed material is clearly resolved and modeled.

UR - http://www.scopus.com/inward/record.url?scp=0028760635&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028760635&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(94)90827-3

DO - 10.1016/0022-0248(94)90827-3

M3 - Article

AN - SCOPUS:0028760635

VL - 138

SP - 310

EP - 317

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -