Abstract

In this work, the single event upset susceptibility of a resistive random access memory (RRAM) system with 1-transistor-1-resistor (1T1R) and crossbar architectures to heavy ion strikes is investigated from the circuit-level to the system-level. From a circuit-level perspective, the 1T1R is only susceptible to single-bit-upset (SBU) due to the isolation of cells, while in the crossbar, multiple-bit-upsets may occur because ion-induced voltage spikes generated on drivers may propagate along rows or columns. Three factors are considered to evaluate system-level susceptibility: the upset rate, the sensitive area, and the vulnerable time window. Our analysis indicates that the crossbar architecture has a smaller maximum bit-error-rate per day as compared to the 1T1R architecture for a given sub-array size, I/O width and susceptible time window.

Original languageEnglish (US)
Article number124005
JournalSemiconductor Science and Technology
Volume31
Issue number12
DOIs
StatePublished - Nov 11 2016

Keywords

  • 1T1R
  • bit error rate
  • crossbar
  • radiation effects
  • RRAM
  • single event upset

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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