Synthesis, stability range, and fundamental properties of Si-Ge-Sn semiconductors grown directly on Si(100) and Ge(100) platforms

Engineering & Materials Science

• Semiconductor materials 100%
• Transport properties 95%
• Semiconductor alloys 77%
• Chemical analysis 73%
• Rutherford backscattering spectroscopy 69%
• Ellipsometry 63%
• Ternary alloys 56%
• Density functional theory 56%
• Lattice constants 55%
• Raman scattering 54%
• Gibbs free energy 51%
• Phase diagrams 48%
• Optical properties 46%
• Chemical vapor deposition 43%
• Thermodynamic stability 38%
• Transmission electron microscopy 38%
• X ray diffraction 37%
• Entropy 31%
• Temperature 30%
• Tuning 29%
• Fabrication 27%
• Substrates 26%
• Experiments 13%

Chemical Compounds

• Semiconductor 85%
• Alloy 78%
• Transport Property 53%
• Liquid Film 40%
• Stannane 38%
• Rutherford Backscattering Spectroscopy 36%
• Optical Method 35%
• Lattice Constant 31%
• Ellipsometry 30%
• Phase Diagrams 25%
• Chemical Vapour Deposition 25%
• Entropy 23%
• Gibbs Free Energy 21%
• Dimension 21%
• Optical Property 20%
• Strain 19%
• Transmission Electron Microscopy 18%
• Buffer Solution 18%
• Density Functional Theory 17%
• Thermodynamics 17%
• Chemistry 16%
• Reaction Yield 11%
• Application 8%