Synthesis of uniform GaN quantum dot arrays via electron nanolithography of D 2GaN 3

Peter Crozier, J. Tolle, John Kouvetakis, Cole Ritter

Research output: Contribution to journalArticlepeer-review

62 Scopus citations

Abstract

The deposition of periodic arrays of uniformly sized GaN quantum dots on to a SiO x substrate was described. The dots were deposited by using a nanolithography technique that was based on a combination of electron-beam-induced chemical vapor deposition and single source molecular hydride chemistries. It was demonstrated that uniform dots of height 5 nm and full widths at half maxima of 4 nm could be deposited under appropriate deposition conditions. It was also demonstrated that the dot size could be controlled by the spatial distribution of secondary electrons leaving the substrate surface.

Original languageEnglish (US)
Pages (from-to)3441-3443
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number18
DOIs
StatePublished - May 3 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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