Synthesis of uniform GaN quantum dot arrays via electron nanolithography of D ₂GaN ₃

The deposition of periodic arrays of uniformly sized GaN quantum dots on to a SiO _x substrate was described. The dots were deposited by using a nanolithography technique that was based on a combination of electron-beam-induced chemical vapor deposition and single source molecular hydride chemistries. It was demonstrated that uniform dots of height 5 nm and full widths at half maxima of 4 nm could be deposited under appropriate deposition conditions. It was also demonstrated that the dot size could be controlled by the spatial distribution of secondary electrons leaving the substrate surface.