The deposition of periodic arrays of uniformly sized GaN quantum dots on to a SiO x substrate was described. The dots were deposited by using a nanolithography technique that was based on a combination of electron-beam-induced chemical vapor deposition and single source molecular hydride chemistries. It was demonstrated that uniform dots of height 5 nm and full widths at half maxima of 4 nm could be deposited under appropriate deposition conditions. It was also demonstrated that the dot size could be controlled by the spatial distribution of secondary electrons leaving the substrate surface.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)