Synthesis of ternary SiGeSn semiconductors on Si(100) via Sn xGe1-x buffer layers was carried out. The crystal structure, elemental distribution and morphological properties of the Si 1-xGexSny/Ge1-xSnx heterostructures were characterized by high-resolution electron microscopy, x-ray diffraction and atomic force microscopy. Growth of epitaxial, uniform and aligned layers with atomically smooth surfaces and monocrystalline structures that havre lattice constants close to Ge was demonstrated.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)