Synthesis of ternary SiGeSn semiconductors on Si(100) via Sn xGe1-x buffer layers

Matthew Bauer, Cole Ritter, Peter Crozier, Jie Ren, Jose Menendez, George Wolf, John Kouvetakis

Research output: Contribution to journalArticle

90 Citations (Scopus)

Abstract

Synthesis of ternary SiGeSn semiconductors on Si(100) via Sn xGe1-x buffer layers was carried out. The crystal structure, elemental distribution and morphological properties of the Si 1-xGexSny/Ge1-xSnx heterostructures were characterized by high-resolution electron microscopy, x-ray diffraction and atomic force microscopy. Growth of epitaxial, uniform and aligned layers with atomically smooth surfaces and monocrystalline structures that havre lattice constants close to Ge was demonstrated.

Original languageEnglish (US)
Pages (from-to)2163-2165
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number11
DOIs
StatePublished - Sep 15 2003

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buffers
distribution (property)
synthesis
electron microscopy
x ray diffraction
atomic force microscopy
crystal structure
high resolution

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Synthesis of ternary SiGeSn semiconductors on Si(100) via Sn xGe1-x buffer layers. / Bauer, Matthew; Ritter, Cole; Crozier, Peter; Ren, Jie; Menendez, Jose; Wolf, George; Kouvetakis, John.

In: Applied Physics Letters, Vol. 83, No. 11, 15.09.2003, p. 2163-2165.

Research output: Contribution to journalArticle

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