Synthesis of (Si 2Ge)C x, and related Ge 1-xC x, phases in the Si-Ge-C system

David Nesting, Jeff Mcmurran, John Kouvetakis

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The synthesis and characterization of binary and ternary semiconductor alloys and ordered phases based on C, Si and Ge are described. Thin films of these materials were synthesized using molecular precursors such as (SiH) 4C and (GeH 3) 4C in which the 8140 and Ge 4C tetrahedra are incorporated as building blocks during deposition. Materials systems prepared include a new ordered structure (Si 2Ge) 1-xC x (x=5%), and Ge 1-xC x hybrids of Ge and C-diamond. The (Si 2Ge)C x phase has a P 3̄ml structure formed by ordering of the [111] lattice planes in a Ge-Si-Si sequence. The Ge-C materials display unusual morphologies ranging from coherent heterostructures to carbide nanorods and quantum dots which are formed by CVD reactions utilizing a new family of (GeH 3) 4-xCH x (x=0-2) precursors. The morphology and microstructure in the samples is dependent upon the molecular design of the precursor and the carbon concentration.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
Pages475-480
Number of pages6
Volume547
StatePublished - 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Nesting, D., Mcmurran, J., & Kouvetakis, J. (1999). Synthesis of (Si 2Ge)C x, and related Ge 1-xC x, phases in the Si-Ge-C system In Materials Research Society Symposium - Proceedings (Vol. 547, pp. 475-480)