Synthesis of highly coherent SiGe and Si4Ge nanostructures by molecular beam epitaxy of H3SiGeH3 and Ge(SiH 3)4

Changwu Hu, Jennifer L. Taraci, John Tolle, Matthew R. Bauer, Peter Crozier, Ignatius S T Tsong, John Kouvetakis

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


Stoichiometric SiGe and Si4Ge epitaxial films and coherent islands are created on Si(100) via thermal dehydrogenation of H 3SiGeH3 and Ge-(SiH3)4, respectively. The control of morphology and composition x of Si 1-xGex nanostructures at the atomic level is achieved for the first time via CVD growth of single-source precursors containing precise atomic arrangements with direct Si-Ge bonds.

Original languageEnglish (US)
Pages (from-to)3569-3572
Number of pages4
JournalChemistry of Materials
Issue number19
StatePublished - Sep 23 2003

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry


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