Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy

Hui Cai, Bin Chen, Gang Wang, Emmanuel Soignard, Afsaneh Khosravi, Marco Manca, Xavier Marie, Lan-Yun Chang, Bernhard Urbaszek, Sefaattin Tongay

Research output: Contribution to journalArticlepeer-review

31 Scopus citations
Original languageEnglish (US)
Article number1605551
JournalAdvanced Materials
Volume29
Issue number8
DOIs
StatePublished - Feb 2017

Keywords

  • gallium telluride
  • physical vapor transport
  • pseudo-1D materials

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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