Synthesis of Butane-Like SiGe Hydrides: Enabling Precursors for Deposition of Ge-Rich Semiconductors

Andrew Chizmeshya (Inventor), John Kouvetakis (Inventor)

Research output: Patent

Abstract

The quickly emerging Silicon-Germanium (Si-Ge) device market is estimated pass $1 billion in 2004, and to double to more than $2 billion by 2006. As this market continues to develop and grow, the demand for higher quality films driven by new materials and processes will increase. This invention provides immediate solutions for those industry demands.Researchers at Arizona State University have synthesized a new family of compounds - Butane-like SiGe Hydrides - as alternatives to existing diSilane and diGermane gases, the new gases offering significant advantages in the growth, material quality and the composition of Si-Ge films and devices.
Original languageEnglish (US)
StatePublished - Dec 5 2005

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Germanium
Silicon
Hydrides
Gases
Semiconductor materials
Patents and inventions
Chemical analysis
Industry
butane

Cite this

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title = "Synthesis of Butane-Like SiGe Hydrides: Enabling Precursors for Deposition of Ge-Rich Semiconductors",
abstract = "The quickly emerging Silicon-Germanium (Si-Ge) device market is estimated pass $1 billion in 2004, and to double to more than $2 billion by 2006. As this market continues to develop and grow, the demand for higher quality films driven by new materials and processes will increase. This invention provides immediate solutions for those industry demands.Researchers at Arizona State University have synthesized a new family of compounds - Butane-like SiGe Hydrides - as alternatives to existing diSilane and diGermane gases, the new gases offering significant advantages in the growth, material quality and the composition of Si-Ge films and devices.",
author = "Andrew Chizmeshya and John Kouvetakis",
year = "2005",
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language = "English (US)",
type = "Patent",

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TY - PAT

T1 - Synthesis of Butane-Like SiGe Hydrides: Enabling Precursors for Deposition of Ge-Rich Semiconductors

AU - Chizmeshya, Andrew

AU - Kouvetakis, John

PY - 2005/12/5

Y1 - 2005/12/5

N2 - The quickly emerging Silicon-Germanium (Si-Ge) device market is estimated pass $1 billion in 2004, and to double to more than $2 billion by 2006. As this market continues to develop and grow, the demand for higher quality films driven by new materials and processes will increase. This invention provides immediate solutions for those industry demands.Researchers at Arizona State University have synthesized a new family of compounds - Butane-like SiGe Hydrides - as alternatives to existing diSilane and diGermane gases, the new gases offering significant advantages in the growth, material quality and the composition of Si-Ge films and devices.

AB - The quickly emerging Silicon-Germanium (Si-Ge) device market is estimated pass $1 billion in 2004, and to double to more than $2 billion by 2006. As this market continues to develop and grow, the demand for higher quality films driven by new materials and processes will increase. This invention provides immediate solutions for those industry demands.Researchers at Arizona State University have synthesized a new family of compounds - Butane-like SiGe Hydrides - as alternatives to existing diSilane and diGermane gases, the new gases offering significant advantages in the growth, material quality and the composition of Si-Ge films and devices.

M3 - Patent

ER -