Synthesis of Butane-Like SiGe Hydrides: Enabling Precursors for Deposition of Ge-Rich Semiconductors

Andrew Chizmeshya (Inventor), John Kouvetakis (Inventor)

Research output: Patent

Abstract

The quickly emerging Silicon-Germanium (Si-Ge) device market is estimated pass $1 billion in 2004, and to double to more than $2 billion by 2006. As this market continues to develop and grow, the demand for higher quality films driven by new materials and processes will increase. This invention provides immediate solutions for those industry demands.Researchers at Arizona State University have synthesized a new family of compounds - Butane-like SiGe Hydrides - as alternatives to existing diSilane and diGermane gases, the new gases offering significant advantages in the growth, material quality and the composition of Si-Ge films and devices.
Original languageEnglish (US)
StatePublished - Dec 5 2005

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