Synthesis and Structure of a Novel Lewis Acid-Base Adduct, (H3C)3SiN3·GaCl3, en Route to Cl2GaN3 and Its Derivatives: Inorganic Precursors to Heteroepitaxial GaN

John Kouvetakis, Jeff McMurran, P. Matsunaga, M. O'Keeffe, John L. Hubbard

Research output: Contribution to journalArticle

44 Scopus citations

Abstract

The formation of a novel Lewis acid-base complex between the silyl azide Si(CH3)3N3 and GaCl3 having the formula (H3C)3SiN3·GaCl3 (1) is demonstrated. The X-ray crystal structure of 1 shows that the electron-donating site is the nitrogen atom directly bonded to the organometallic group. Compound 1 crystallizes in the orthorhombic space group Pnma, with cell dimensions a = 15.823(10) Å, b = 10.010(5) Å, c = 7.403(3) Å, and Z = 4. Low-temperature decomposition of 1 via loss of (H3C)3SiCl yields Cl2GaN3 (2), which serves as the first totally inorganic (C,H-free) precursor to heteroepitaxial GaN by ultrahigh-vacuum chemical vapor deposition. A volatile monomeric Lewis acid-base adduct of 2 with trimethylamine, Cl2GaN3·N(CH3)3 (3), has also been prepared and utilized to grow high-quality GaN on Si and basal plane sapphire substrates. The valence bond model is used to analyze bond lengths in organometallic azides and related adducts.

Original languageEnglish (US)
Pages (from-to)1792-1797
Number of pages6
JournalInorganic chemistry
Volume36
Issue number9
DOIs
StatePublished - Apr 23 1997

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Inorganic Chemistry

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