Synthesis and Structure of a Novel Lewis Acid-Base Adduct, (H3C)3SiN3·GaCl3, en Route to Cl2GaN3 and Its Derivatives

Inorganic Precursors to Heteroepitaxial GaN

John Kouvetakis, Jeff McMurran, P. Matsunaga, M. O'Keeffe, John L. Hubbard

Research output: Contribution to journalArticle

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Abstract

The formation of a novel Lewis acid-base complex between the silyl azide Si(CH3)3N3 and GaCl3 having the formula (H3C)3SiN3·GaCl3 (1) is demonstrated. The X-ray crystal structure of 1 shows that the electron-donating site is the nitrogen atom directly bonded to the organometallic group. Compound 1 crystallizes in the orthorhombic space group Pnma, with cell dimensions a = 15.823(10) Å, b = 10.010(5) Å, c = 7.403(3) Å, and Z = 4. Low-temperature decomposition of 1 via loss of (H3C)3SiCl yields Cl2GaN3 (2), which serves as the first totally inorganic (C,H-free) precursor to heteroepitaxial GaN by ultrahigh-vacuum chemical vapor deposition. A volatile monomeric Lewis acid-base adduct of 2 with trimethylamine, Cl2GaN3·N(CH3)3 (3), has also been prepared and utilized to grow high-quality GaN on Si and basal plane sapphire substrates. The valence bond model is used to analyze bond lengths in organometallic azides and related adducts.

Original languageEnglish (US)
Pages (from-to)1792-1797
Number of pages6
JournalInorganic Chemistry
Volume36
Issue number9
StatePublished - Apr 23 1997

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Lewis Acids
Azides
Organometallics
adducts
routes
Derivatives
acids
Aluminum Oxide
Bond length
Ultrahigh vacuum
synthesis
nitrogen atoms
ultrahigh vacuum
Chemical vapor deposition
sapphire
Nitrogen
Crystal structure
vapor deposition
Decomposition
valence

ASJC Scopus subject areas

  • Inorganic Chemistry

Cite this

Synthesis and Structure of a Novel Lewis Acid-Base Adduct, (H3C)3SiN3·GaCl3, en Route to Cl2GaN3 and Its Derivatives : Inorganic Precursors to Heteroepitaxial GaN. / Kouvetakis, John; McMurran, Jeff; Matsunaga, P.; O'Keeffe, M.; Hubbard, John L.

In: Inorganic Chemistry, Vol. 36, No. 9, 23.04.1997, p. 1792-1797.

Research output: Contribution to journalArticle

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N2 - The formation of a novel Lewis acid-base complex between the silyl azide Si(CH3)3N3 and GaCl3 having the formula (H3C)3SiN3·GaCl3 (1) is demonstrated. The X-ray crystal structure of 1 shows that the electron-donating site is the nitrogen atom directly bonded to the organometallic group. Compound 1 crystallizes in the orthorhombic space group Pnma, with cell dimensions a = 15.823(10) Å, b = 10.010(5) Å, c = 7.403(3) Å, and Z = 4. Low-temperature decomposition of 1 via loss of (H3C)3SiCl yields Cl2GaN3 (2), which serves as the first totally inorganic (C,H-free) precursor to heteroepitaxial GaN by ultrahigh-vacuum chemical vapor deposition. A volatile monomeric Lewis acid-base adduct of 2 with trimethylamine, Cl2GaN3·N(CH3)3 (3), has also been prepared and utilized to grow high-quality GaN on Si and basal plane sapphire substrates. The valence bond model is used to analyze bond lengths in organometallic azides and related adducts.

AB - The formation of a novel Lewis acid-base complex between the silyl azide Si(CH3)3N3 and GaCl3 having the formula (H3C)3SiN3·GaCl3 (1) is demonstrated. The X-ray crystal structure of 1 shows that the electron-donating site is the nitrogen atom directly bonded to the organometallic group. Compound 1 crystallizes in the orthorhombic space group Pnma, with cell dimensions a = 15.823(10) Å, b = 10.010(5) Å, c = 7.403(3) Å, and Z = 4. Low-temperature decomposition of 1 via loss of (H3C)3SiCl yields Cl2GaN3 (2), which serves as the first totally inorganic (C,H-free) precursor to heteroepitaxial GaN by ultrahigh-vacuum chemical vapor deposition. A volatile monomeric Lewis acid-base adduct of 2 with trimethylamine, Cl2GaN3·N(CH3)3 (3), has also been prepared and utilized to grow high-quality GaN on Si and basal plane sapphire substrates. The valence bond model is used to analyze bond lengths in organometallic azides and related adducts.

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