Synthesis and properties of Si-Ge-Sn materials and devices grown by CVD

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Direct-gap photoluminescence and electroluminescence from Ge 1-ySny/Si(100) alloys are discussed. Fabrication and performance evaluation of ternary Si1-x-yGexSny photodiodes is also presented. The optical properties in both systems are dominated by direct transitions exhibiting the expected compositional dependence.

Original languageEnglish (US)
Title of host publicationInformation Optoelectronics, Nanofabrication and Testing, IONT 2012
Publication statusPublished - 2012
EventInformation Optoelectronics, Nanofabrication and Testing, IONT 2012 - Wuhan, China
Duration: Nov 1 2012Nov 2 2012

Other

OtherInformation Optoelectronics, Nanofabrication and Testing, IONT 2012
CountryChina
CityWuhan
Period11/1/1211/2/12

    Fingerprint

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kouvetakis, J., Beeler, R., & Menendez, J. (2012). Synthesis and properties of Si-Ge-Sn materials and devices grown by CVD. In Information Optoelectronics, Nanofabrication and Testing, IONT 2012