Synthesis and analysis of SiGeC

John Kouvetakis, James Mayer

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Scopus citations

Abstract

Chemical-vapor deposition (CVD) techniques have been used to form heteroepitaxial layers of SiGeC on (100)Si. The epitaxial layers were analyzed by RBS, C-resonance, channeling, SIMS, x-ray diffraction and high resolution transmission electron microscopy. Novel binary and ternary phases have been formed by CVD: Si4C, Si3GeC4 (sphalerite), Ge4C and (Si2Ge)Cx. The approach combines novel precursor chemistries and modern deposition techniques (ultrahigh vacuum CVD).

Original languageEnglish (US)
Title of host publicationInternational Conference on Solid-State and Integrated Circuit Technology Proceedings
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages2-5
Number of pages4
StatePublished - 1998
EventProceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China
Duration: Oct 21 1998Oct 23 1998

Other

OtherProceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology
CityBeijing, China
Period10/21/9810/23/98

ASJC Scopus subject areas

  • Engineering(all)

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