Abstract
Chemical-vapor deposition (CVD) techniques have been used to form heteroepitaxial layers of SiGeC on (100)Si. The epitaxial layers were analyzed by RBS, C-resonance, channeling, SIMS, x-ray diffraction and high resolution transmission electron microscopy. Novel binary and ternary phases have been formed by CVD: Si4C, Si3GeC4 (sphalerite), Ge4C and (Si2Ge)Cx. The approach combines novel precursor chemistries and modern deposition techniques (ultrahigh vacuum CVD).
| Original language | English (US) |
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| Title of host publication | International Conference on Solid-State and Integrated Circuit Technology Proceedings |
| Place of Publication | Piscataway, NJ, United States |
| Publisher | IEEE |
| Pages | 2-5 |
| Number of pages | 4 |
| State | Published - 1998 |
| Event | Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China Duration: Oct 21 1998 → Oct 23 1998 |
Other
| Other | Proceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology |
|---|---|
| City | Beijing, China |
| Period | 10/21/98 → 10/23/98 |
ASJC Scopus subject areas
- General Engineering